| FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 160 | 2020 |
| A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, M Rudolph, ... 2019 IEEE International Electron Devices Meeting (IEDM), 28.7. 1-28.7. 4, 2019 | 137 | 2019 |
| Ultra-low power flexible precision FeFET based analog in-memory computing T Soliman, F Müller, T Kirchner, T Hoffmann, H Ganem, E Karimov, T Ali, ... 2020 IEEE International Electron Devices Meeting (IEDM), 29.2. 1-29.2. 4, 2020 | 113 | 2020 |
| Ferroelectric field effect transistors as a synapse for neuromorphic application M Lederer, T Kämpfe, T Ali, F Müller, R Olivo, R Hoffmann, N Laleni, ... IEEE Transactions on Electron Devices 68 (5), 2295-2300, 2021 | 90 | 2021 |
| A scalable design of multi-bit ferroelectric content addressable memory for data-centric computing C Li, F Müller, T Ali, R Olivo, M Imani, S Deng, C Zhuo, T Kämpfe, X Yin, ... 2020 IEEE International Electron Devices Meeting (IEDM), 29.3. 1-29.3. 4, 2020 | 84 | 2020 |
| Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications S De, MA Baig, BH Qiu, F Müller, HH Le, M Lederer, T Kämpfe, T Ali, ... Frontiers in Nanotechnology 3, 826232, 2022 | 49 | 2022 |
| Fefet multi-bit content-addressable memories for in-memory nearest neighbor search A Kazemi, MM Sharifi, AF Laguna, F Müller, X Yin, T Kämpfe, M Niemier, ... IEEE Transactions on Computers 71 (10), 2565-2576, 2021 | 47 | 2021 |
| In-memory nearest neighbor search with fefet multi-bit content-addressable memories A Kazemi, MM Sharifi, AF Laguna, F Müller, R Rajaei, R Olivo, T Kämpfe, ... 2021 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2021 | 47 | 2021 |
| Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ... IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020 | 47 | 2020 |
| Demonstration of multiply-accumulate operation with 28 nm fefet crossbar array S De, F Müller, N Laleni, M Lederer, Y Raffel, S Mojumder, A Vardar, ... IEEE Electron Device Letters 43 (12), 2081-2084, 2022 | 41 | 2022 |
| First demonstration of in-memory computing crossbar using multi-level Cell FeFET T Soliman, S Chatterjee, N Laleni, F Müller, T Kirchner, N Wehn, ... Nature Communications 14 (1), 6348, 2023 | 40 | 2023 |
| Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing A Kazemi, F Müller, MM Sharifi, H Errahmouni, G Gerlach, T Kämpfe, ... Scientific reports 12 (1), 19201, 2022 | 40 | 2022 |
| Read-optimized 28nm hkmg multibit fefet synapses for inference-engine applications S De, F Müller, HH Le, M Lederer, Y Raffel, T Ali, D Lu, T Kämpfe IEEE Journal of the Electron Devices Society 10, 637-641, 2022 | 40 | 2022 |
| 28 nm HKMG-based current limited FeFET crossbar-array for inference application S De, F Müller, S Thunder, S Abdulazhanov, N Laleni, M Lederer, T Ali, ... IEEE Transactions on Electron Devices 69 (12), 7194-7198, 2022 | 32 | 2022 |
| Current percolation path impacting switching behavior of ferroelectric FETs F Müller, M Lederer, R Olivo, T Ali, R Hoffmann, H Mulaosmanovic, ... 2021 International Symposium on VLSI Technology, Systems and Applications …, 2021 | 32 | 2021 |
| Deep random forest with ferroelectric analog content addressable memory X Yin, F Müller, AF Laguna, C Li, Q Huang, Z Shi, M Lederer, N Laleni, ... Science advances 10 (23), eadk8471, 2024 | 29 | 2024 |
| Optimizing ferroelectric and interface layers in HZO-based FTJs for neuromorphic applications A Sünbül, T Ali, K Mertens, R Revello, D Lehninger, F Müller, M Lederer, ... IEEE Transactions on Electron Devices 69 (2), 808-815, 2021 | 29 | 2021 |
| A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability T Ali, K Kühnel, M Czernohorsky, C Mart, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 67 (7), 2981-2987, 2020 | 29 | 2020 |
| Felix: A ferroelectric fet based low power mixed-signal in-memory architecture for dnn acceleration T Soliman, N Laleni, T Kirchner, F Müller, A Shrivastava, T Kämpfe, ... ACM Transactions on Embedded Computing Systems 21 (6), 1-25, 2022 | 28 | 2022 |
| Integration of hafnium oxide on epitaxial SiGe for p-type ferroelectric FET application M Lederer, F Müller, K Kühnel, R Olivo, K Mertens, M Trentzsch, S Dünkel, ... IEEE Electron Device Letters 41 (12), 1762-1765, 2020 | 28 | 2020 |
Maximilian LedererFraunhofer IPMS - CNTVerifisert e-postadresse på ipms.fraunhofer.de