Layer Hall effect in a 2D topological axion antiferromagnet A Gao, YF Liu, C Hu, JX Qiu, C Tzschaschel, B Ghosh, SC Ho, D Bérubé, ...
Nature 595 (7868), 521-525, 2021
257 2021 Analysis and compact modeling of negative capacitance transistor with high ON-current and negative output differential resistance—Part II: Model validation G Pahwa, T Dutta, A Agarwal, S Khandelwal, S Salahuddin, C Hu, ...
IEEE Transactions on Electron Devices 63 (12), 4986-4992, 2016
220 2016 Electric field induced gap modification in ultrathin blue phosphorous B Ghosh, S Nahas, S Bhowmick, A Agarwal
Phys. Rev. B 91, 115433, 2014
209 2014 Realization of an intrinsic ferromagnetic topological state in MnBi8 Te13 C Hu, L Ding, KN Gordon, B Ghosh, HJ Tien, H Li, AG Linn, SW Lien, ...
Science advances 6 (30), eaba4275, 2020
174 2020 Numerical investigation of short-channel effects in negative capacitance MFIS and MFMIS transistors: Subthreshold behavior G Pahwa, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 65 (11), 5130-5136, 2018
151 2018 Physical insights on negative capacitance transistors in nonhysteresis and hysteresis regimes: MFMIS versus MFIS structures G Pahwa, T Dutta, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 65 (3), 867-873, 2018
140 2018 3D Dirac Plasmons in the Type-II Dirac Semimetal A Politano, G Chiarello, B Ghosh, K Sadhukhan, CN Kuo, CS Lue, ...
Physical review letters 121 (8), 086804, 2018
128 2018 Berry curvature dipole senses topological transition in a moiré superlattice S Sinha, PC Adak, A Chakraborty, K Das, K Debnath, LDV Sangani, ...
Nature Physics 18 (7), 765-770, 2022
119 2022 Compact model for ferroelectric negative capacitance transistor with MFIS structure G Pahwa, T Dutta, A Agarwal, YS Chauhan
IEEE Transactions on Electron Devices 64 (3), 1366-1374, 2017
118 2017 Doping Strategies for Monolayer MoS2 via Surface Adsorption: A Systematic Study P Rastogi, S Kumar, S Bhowmick, A Agarwal, YS Chauhan
J. Phys. Chem. C 118 (51), 30309–30314, 2014
118 2014 Plasmonics with two-dimensional semiconductors: from basic research to technological applications A Agarwal, MS Vitiello, L Viti, A Cupolillo, A Politano
Nanoscale 10 (19), 8938-8946, 2018
112 2018 Thickness and electric-field-dependent polarizability and dielectric constant in phosphorene P Kumar, BS Bhadoria, S Kumar, S Bhowmick, YS Chauhan, A Agarwal
Physical Review B 93 (19), 195428, 2016
108 2016 Observation of bulk states and spin-polarized topological surface states in transition metal dichalcogenide Dirac semimetal candidate B Ghosh, D Mondal, CN Kuo, CS Lue, J Nayak, J Fujii, I Vobornik, ...
Physical Review B 100 (19), 195134, 2019
106 2019 SnP3 : A Previously Unexplored Two-Dimensional Material B Ghosh, S Puri, A Agarwal, S Bhowmick
The Journal of Physical Chemistry C 122 (31), 18185-18191, 2018
105 2018 Linear magnetochiral transport in tilted type-I and type-II Weyl semimetals K Das, A Agarwal
Physical Review B 99 (8), 085405, 2019
104 2019 Anisotropic plasmons, Friedel oscillations, and screening in K Sadhukhan, A Agarwal
Physical Review B 96 (3), 035410, 2017
104 2017 Performance evaluation of 7-nm node negative capacitance FinFET-based SRAM T Dutta, G Pahwa, AR Trivedi, S Sinha, A Agarwal, YS Chauhan
IEEE Electron Device Letters 38 (8), 1161-1164, 2017
94 2017 Designing energy efficient and hysteresis free negative capacitance FinFET with negative DIBL and 3.5X ION using compact modeling approach G Pahwa, T Dutta, A Agarwal, YS Chauhan
ESSCIRC Conference 2016: 42nd European Solid-State Circuits Conference, 49-54, 2016
83 2016 Anisotropic plasmons, excitons, and electron energy loss spectroscopy of phosphorene B Ghosh, P Kumar, A Thakur, YS Chauhan, S Bhowmick, A Agarwal
Physical Review B 96 (3), 035422, 2017
80 2017 Four allotropes of semiconducting layered arsenic that switch into a topological insulator via an electric field: Computational study S Mardanya, VK Thakur, S Bhowmick, A Agarwal
Physical Review B 94 (3), 035423, 2016
68 2016 
Yogesh S. ChauhanFellow IEEE, FNAE, Professor-IIT KanpurVerifisert e-postadresse på iitk.ac.in
