| Antiferroelectric Phase Evolution in HfxZr1-xO2 Thin Film Toward High Endurance of Non-Volatile Memory Devices D Chen, S Zhong, Y Dong, T Cui, J Liu, M Si, X Li IEEE Electron Device Letters 43 (12), 2065-2068, 2022 | 18 | 2022 |
| An energy efficient reservoir computing system based on HZO memcapacitive devices P Zhang, X Ma, Y Dong, Z Wu, D Chen, T Cui, J Liu, G Liu, X Li Applied Physics Letters 123 (12), 2023 | 11 | 2023 |
| Can Interface Layer be Really Free for HfxZr1-xO2 Based Ferroelectric Field-Effect Transistors With Oxide Semiconductor Channel? T Cui, D Chen, Y Dong, Y Fan, Z Yao, H Duan, J Liu, G Liu, M Si, X Li IEEE Electron Device Letters 45 (3), 368-371, 2024 | 9 | 2024 |
| PBTI stress-induced 1/f noise in n-channel FinFET DY Chen, JS Bi, K Xi, G Wang Chinese Physics B 29 (12), 128501, 2020 | 7 | 2020 |
| Independent Effects of Dopant, Oxygen Vacancy, and Specific Surface Area on Crystal Phase of HfO2 Thin Films towards General Parameters to Engineer the Ferroelectricity T Cui, L Zhu, D Chen, Y Fan, J Liu, X Li Electronics 11 (15), 2369, 2022 | 4 | 2022 |
| The Impact of Intrinsic RC Coupling With Domains Flipping on Polarization Switching Time of Hf0.5Zr0.5O2 Ferroelectric Capacitor Y Dong, T Cui, D Chen, J Liu, M Si, X Li IEEE Electron Device Letters 44 (9), 1480-1483, 2023 | 2 | 2023 |
| Correlation between crystal phase composition, wake-up effect, and endurance performance in ferroelectric HfxZr1− xO2 thin films D Chen, S Zhong, Y Dong, T Cui, J Liu, M Si, X Li Applied Physics Letters 122 (21), 2023 | 2 | 2023 |
| A metastable temperature-strain phase diagram of HfxZr1− xO2 thin films based on synchrotron-based in situ 2D GIXRD investigation T Cui, Z Xue, D Chen, Y Fan, J Liu, M Si, X Li Applied Physics Letters 125 (25), 2024 | | 2024 |
| Short-term and long-term T-O phase transition responsible for two stages of wake-up process in ferroelectric Hf0.5Zr0.5O2 film D Chen, Q Gao, Y Fan, Z Yao, J Liu, M Si, X Li 2024 IEEE Silicon Nanoelectronics Workshop (SNW), 95-96, 2024 | | 2024 |
| Correlation of wake-up effect in Hf1-xZrxO2 ferroelectrics with antiferroelectric properties S Zhong, D Chen, Y Dong, T Cui, L Wu, J Liu, M Si, XY Li 2022 IEEE 16th International Conference on Solid-State & Integrated Circuit …, 2022 | | 2022 |
| Dynamics of Negative Capacitance induced by Ferroelectric Switching in Ferroelectric-Resistor Circuit Y Dong, D Chen, N Zhong, J Liu, C Duan, X Li 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | | 2021 |
