Toward clean and crackless transfer of graphene X Liang, BA Sperling, I Calizo, G Cheng, CA Hacker, Q Zhang, Y Obeng, ...
ACS nano 5 (11), 9144-9153, 2011
1048 2011 Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits DJ Gundlach, JE Royer, SK Park, S Subramanian, OD Jurchescu, ...
Nature Materials 7 (3), 216-221, 2008
552 2008 A flexible solution-processed memristor N Gergel-Hackett, B Hamadani, B Dunlap, J Suehle, C Richter, C Hacker, ...
IEEE Electron Device Letters 30 (7), 706-708, 2009
306 2009 Variations in semiconducting polymer microstructure and hole mobility with spin-coating speed DM DeLongchamp, BM Vogel, Y Jung, MC Gurau, CA Richter, OA Kirillov, ...
Chemistry of materials 17 (23), 5610-5612, 2005
306 2005 New resistivity for high-mobility quantum Hall conductors PL McEuen, A Szafer, CA Richter, BW Alphenaar, JK Jain, AD Stone, ...
Phys. Rev. Lett. 64 (17), 2062, 1990
295 1990 New resistivity for high-mobility quantum Hall conductors PL McEuen, A Szafer, CA Richter, BW Alphenaar, JK Jain, AD Stone, ...
Phys. Rev. Lett. 64, 2062, 1990
295 1990 Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ...
Applied Physics Letters 101 (2), 2012
233 2012 Spectroscopic ellipsometry characterization of high-k dielectric YJ Cho, NV Nguyen, CA Richter, JR Ehrstein, BH Lee, JC Lee
Applied physics letters 80 (7), 1249-1251, 2002
204 2002 Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors SM Koo, MD Edelstein, Q Li, CA Richter, EM Vogel
Nanotechnology 16 (9), 1482, 2005
196 2005 Enhanced channel modulation in dual-gated silicon nanowire transistors SM Koo, Q Li, MD Edelstein, CA Richter, EM Vogel
Nano letters 5 (12), 2519-2523, 2005
186 2005 Ultraviolet/ozone treatment to reduce metal-graphene contact resistance W Li, Y Liang, D Yu, L Peng, KP Pernstich, T Shen, AR Hight Walker, ...
Applied Physics Letters 102 (18), 2013
173 2013 Controllable, wide‐ranging n‐doping and p‐doping of monolayer group 6 transition‐metal disulfides and diselenides S Zhang, HM Hill, K Moudgil, CA Richter, AR Hight Walker, S Barlow, ...
Advanced Materials 30 (36), 1802991, 2018
171 2018 Broadband optical properties of large-area monolayer CVD molybdenum disulfide W Li, AG Birdwell, M Amani, RA Burke, X Ling, YH Lee, X Liang, L Peng, ...
Physical Review B 90 (19), 195434, 2014
148 2014 How to report and benchmark emerging field-effect transistors Z Cheng, CS Pang, P Wang, ST Le, Y Wu, D Shahrjerdi, I Radu, ...
Nature Electronics 5 (7), 416-423, 2022
140 2022 Topological Insulator Bi2 Se3 Nanowire High Performance Field-Effect Transistors H Zhu, CA Richter, E Zhao, JE Bonevich, WA Kimes, HJ Jang, H Yuan, ...
Scientific reports 3 (1), 1757, 2013
137 2013 Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics EM Vogel, WK Henson, CA Richter, JS Suehle
IEEE Transactions on Electron Devices 47 (3), 601-608, 2000
132 2000 Influence of Metal–MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, YS Obeng, ...
ACS applied materials & interfaces 7 (2), 1180-1187, 2015
131 2015 High inversion current in silicon nanowire field effect transistors SM Koo, A Fujiwara, JP Han, EM Vogel, CA Richter, JE Bonevich
Nano Letters 4 (11), 2197-2201, 2004
118 2004 Influence of a water rinse on the structure and properties of poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate) films DM DeLongchamp, BD Vogt, CM Brooks, K Kano, J Obrzut, CA Richter, ...
Langmuir 21 (24), 11480-11483, 2005
114 2005 A comparison of quantum-mechanical capacitance-voltage simulators CA Richter, AR Hefner, EM Vogel
IEEE Electron Device Letters 22 (1), 35-37, 2002
110 2002 
Christina HackerNational Institute of Standards and TechnologyVerifisert e-postadresse på nist.gov
