Effects of applied bias and high field stress on the radiation response of GaN/AlGaN HEMTs J Chen, YS Puzyrev, R Jiang, EX Zhang, MW McCurdy, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 62 (6), 2423-2430, 2015
116 2015 Charge Trapping in Al2 O3 /2 O3 -Based MOS Capacitors MA Bhuiyan, H Zhou, R Jiang, EX Zhang, DM Fleetwood, DY Peide, ...
IEEE Electron Device Letters 39 (7), 1022-1025, 2018
69 2018 Multiple defects cause degradation after high field stress in AlGaN/GaN HEMTs R Jiang, X Shen, J Fang, P Wang, EX Zhang, J Chen, DM Fleetwood, ...
IEEE Transactions on Device and Materials Reliability 18 (3), 364-376, 2018
64 2018 Worst-case bias for proton and 10-keV X-ray irradiation of AlGaN/GaN HEMTs R Jiang, EX Zhang, MW McCurdy, J Chen, X Shen, P Wang, ...
IEEE Transactions on Nuclear Science 64 (1), 218-225, 2016
59 2016 Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2 /HfO2 Gate Dielectrics M Gorchichko, Y Cao, EX Zhang, D Yan, H Gong, SE Zhao, P Wang, ...
IEEE Transactions on Nuclear Science 67 (1), 245-252, 2019
50 2019 1/ P Wang, R Jiang, J Chen, EX Zhang, MW McCurdy, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 64 (1), 181-189, 2016
47 2016 Dose-rate dependence of the total-ionizing-dose response of GaN-based HEMTs R Jiang, EX Zhang, MW McCurdy, P Wang, H Gong, D Yan, RD Schrimpf, ...
IEEE Transactions on Nuclear Science 66 (1), 170-176, 2018
42 2018 Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors R Jiang, X Shen, J Chen, GX Duan, EX Zhang, DM Fleetwood, ...
Applied Physics Letters 109 (2), 2016
30 2016 Comparison of total-ionizing-dose effects in bulk and SOI FinFETs at 90 and 295 K TD Haeffner, RF Keller, R Jiang, BD Sierawski, MW McCurdy, EX Zhang, ...
IEEE Transactions on Nuclear Science 66 (6), 911-917, 2019
27 2019 Gate bias and length dependences of total ionizing dose effects in InGaAs FinFETs on bulk Si SE Zhao, S Bonaldo, P Wang, R Jiang, H Gong, EX Zhang, N Waldron, ...
IEEE Transactions on Nuclear Science 66 (7), 1599-1605, 2019
26 2019 Worst-case bias for high voltage, elevated-temperature stress of AlGaN/GaN HEMTs PF Wang, X Li, EX Zhang, R Jiang, MW McCurdy, BS Poling, ER Heller, ...
IEEE Transactions on Device and Materials Reliability 20 (2), 420-428, 2020
25 2020 Radiation-induced charge trapping and low-frequency noise of graphene transistors P Wang, C Perini, A O’Hara, BR Tuttle, EX Zhang, H Gong, C Liang, ...
IEEE Transactions on Nuclear Science 65 (1), 156-163, 2017
24 2017 Understanding charge collection mechanisms in InGaAs FinFETs using high-speed pulsed-laser transient testing with tunable wavelength K Ni, AL Sternberg, EX Zhang, JA Kozub, R Jiang, RD Schrimpf, RA Reed, ...
IEEE Transactions on Nuclear Science 64 (8), 2069-2078, 2017
24 2017 Temperature and gate bias dependence of carrier transport mechanisms in amorphous indium–gallium–zinc oxide thin film transistors X Huang, C Wu, H Lu, F Ren, D Chen, R Jiang, R Zhang, Y Zheng, Q Xu
Solid-state electronics 86, 41-44, 2013
24 2013 Total-ionizing-dose responses of GaN-based HEMTs with different channel thicknesses and MOSHEMTs with epitaxial MgCaO as gate dielectric MA Bhuiyan, H Zhou, SJ Chang, X Lou, X Gong, R Jiang, H Gong, ...
IEEE Transactions on Nuclear Science 65 (1), 46-52, 2017
22 2017 Total ionizing dose effects in 70-GHz bandwidth photodiodes in a SiGe integrated photonics platform PS Goley, GN Tzintzarov, S Zeinolabedinzadeh, A Ildefonso, K Motoki, ...
IEEE Transactions on Nuclear Science 66 (1), 125-133, 2018
21 2018 Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes R Jiang, H Lu, DJ Chen, FF Ren, DW Yan, R Zhang, YD Zheng
Chinese Physics B 22 (4), 047805, 2013
19 2013 Capacitance–frequency estimates of border-trap densities in multifin MOS capacitors SE Zhao, R Jiang, EX Zhang, W Liao, C Liang, DM Fleetwood, ...
IEEE Transactions on Nuclear Science 65 (1), 175-183, 2017
18 2017 Low-frequency noise and defects in copper and ruthenium resistors DM Fleetwood, S Beyne, R Jiang, SE Zhao, P Wang, S Bonaldo, ...
Applied Physics Letters 114 (20), 2019
16 2019 Total ionizing dose (TID) effects in ultra-thin body Ge-on-insulator (GOI) junctionless CMOSFETs with recessed source/drain and channel S Ren, MA Bhuiyan, H Wu, R Jiang, K Ni, EX Zhang, RA Reed, ...
IEEE Transactions on Nuclear Science 64 (1), 176-180, 2016
14 2016 
Daniel M. FleetwoodProfessor of Electrical Engineering, Vanderbilt UniversityVerifisert e-postadresse på vanderbilt.edu