Resistance random access memory TC Chang, KC Chang, TM Tsai, TJ Chu, SM Sze
Materials Today 19 (5), 254-264, 2016
543 2016 Physical and chemical mechanisms in oxide-based resistance random access memory KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ...
Nanoscale research letters 10, 1-27, 2015
158 2015 Functionally complete Boolean logic in 1T1R resistive random access memory ZR Wang, YT Su, Y Li, YX Zhou, TJ Chu, KC Chang, TC Chang, TM Tsai, ...
IEEE Electron Device Letters 38 (2), 179-182, 2016
119 2016 Characteristics and mechanisms of silicon-oxide-based resistance random access memory KC Chang, TM Tsai, TC Chang, HH Wu, JH Chen, YE Syu, GW Chang, ...
IEEE electron device letters 34 (3), 399-401, 2013
76 2013 Charge quantity influence on resistance switching characteristic during forming process TJ Chu, TC Chang, TM Tsai, HH Wu, JH Chen, KC Chang, TF Young, ...
IEEE Electron Device Letters 34 (4), 502-504, 2013
72 2013 Origin of hopping conduction in graphene-oxide-doped silicon oxide resistance random access memory devices KC Chang, R Zhang, TC Chang, TM Tsai, JC Lou, JH Chen, TF Young, ...
IEEE electron device letters 34 (5), 677-679, 2013
61 2013 Endurance Improvement Technology With Nitrogen Implanted in the Interface of YE Syu, R Zhang, TC Chang, TM Tsai, KC Chang, JC Lou, TF Young, ...
IEEE electron device letters 34 (7), 864-866, 2013
55 2013 Characteristics of hafnium oxide resistance random access memory with different setting compliance current YT Su, KC Chang, TC Chang, TM Tsai, R Zhang, JC Lou, JH Chen, ...
Applied Physics Letters 103 (16), 2013
54 2013 Resistive switching modification by ultraviolet illumination in transparent electrode resistive random access memory CC Shih, KC Chang, TC Chang, TM Tsai, R Zhang, JH Chen, KH Chen, ...
IEEE electron device letters 35 (6), 633-635, 2014
52 2014 Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2 -Based Resistive Random Access Memory PH Chen, KC Chang, TC Chang, TM Tsai, CH Pan, TJ Chu, MC Chen, ...
IEEE Electron Device Letters 37 (3), 280-283, 2016
51 2016 A method to reduce forming voltage without degrading device performance in hafnium oxide-based 1T1R resistive random access memory YT Su, HW Liu, PH Chen, TC Chang, TM Tsai, TJ Chu, CH Pan, CH Wu, ...
IEEE Journal of the Electron Devices Society 6, 341-345, 2018
46 2018 Dual ion effect of the lithium silicate resistance random access memory KC Chang, TM Tsai, TC Chang, KH Chen, R Zhang, ZY Wang, JH Chen, ...
IEEE electron device letters 35 (5), 530-532, 2014
45 2014 Hydrogen induced redox mechanism in amorphous carbon resistive random access memory YJ Chen, HL Chen, TF Young, TC Chang, TM Tsai, KC Chang, R Zhang, ...
Nanoscale Research Letters 9, 1-5, 2014
44 2014 Resistance switching induced by hydrogen and oxygen in diamond-like carbon memristor YJ Chen, KC Chang, TC Chang, HL Chen, TF Young, TM Tsai, R Zhang, ...
IEEE Electron Device Letters 35 (10), 1016-1018, 2014
44 2014 Electrical conduction mechanism of Zn: SiOx resistance random access memory with supercritical CO2 fluid process KC Chang, TM Tsai, R Zhang, TC Chang, KH Chen, JH Chen, TF Young, ...
Applied Physics Letters 103 (8), 2013
44 2013 Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment KC Chang, CH Pan, TC Chang, TM Tsai, R Zhang, JC Lou, TF Young, ...
IEEE electron device letters 34 (5), 617-619, 2013
44 2013 Low Temperature Improvement Method on KC Chang, TM Tsai, TC Chang, HH Wu, KH Chen, JH Chen, TF Young, ...
IEEE electron device letters 34 (4), 511-513, 2013
40 2013 Ultra-high resistive switching mechanism induced by oxygen ion accumulation on nitrogen-doped resistive random access memory TJ Chu, TM Tsai, TC Chang, KC Chang, CH Pan, KH Chen, JH Chen, ...
Applied Physics Letters 105 (22), 2014
29 2014 An electronic synapse device based on solid electrolyte resistive random access memory W Zhang, Y Hu, TC Chang, KC Chang, TM Tsai, HL Chen, YT Su, TJ Chu, ...
IEEE Electron Device Letters 36 (8), 772-774, 2015
28 2015 Resistive random access memory TC Chang, K Chang, TM Tsai, TJ Chu, CH Pan
US Patent App. 14/559,112, 2016
26 2016 