| Near-unity photoluminescence quantum yield in MoS2 M Amani, DH Lien, D Kiriya, J Xiao, A Azcatl, J Noh, SR Madhvapathy, ... Science 350 (6264), 1065-1068, 2015 | 937 | 2015 |
| MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts S Chuang, C Battaglia, A Azcatl, S McDonnell, JS Kang, X Yin, M Tosun, ... Nano letters 14 (3), 1337-1342, 2014 | 655 | 2014 |
| Hole Selective MoOx Contact for Silicon Solar Cells C Battaglia, X Yin, M Zheng, ID Sharp, T Chen, S McDonnell, A Azcatl, ... Nano letters 14 (2), 967-971, 2014 | 638 | 2014 |
| E. áYablonovitch, A. áJavey M á Amani, DH á Lien, D á Kiriya, J á Xiao, A á Azcatl, J á Noh, ... Science 350, 1065, 2015 | 493 | 2015 |
| Manganese Doping of Monolayer MoS2: The Substrate Is Critical K Zhang, S Feng, J Wang, A Azcatl, N Lu, R Addou, N Wang, C Zhou, ... Nano letters 15 (10), 6586-6591, 2015 | 473 | 2015 |
| Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition SM Eichfeld, L Hossain, YC Lin, AF Piasecki, B Kupp, AG Birdwell, ... ACS nano 9 (2), 2080-2087, 2015 | 462 | 2015 |
| Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ... Nano letters 16 (9), 5437-5443, 2016 | 430 | 2016 |
| HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ... ACS nano 7 (11), 10354-10361, 2013 | 332 | 2013 |
| Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces R Addou, S McDonnell, D Barrera, Z Guo, A Azcatl, J Wang, H Zhu, ... ACS nano 9 (9), 9124-9133, 2015 | 309 | 2015 |
| Air Stable p-Doping of WSe2 by Covalent Functionalization P Zhao, D Kiriya, A Azcatl, C Zhang, M Tosun, YS Liu, M Hettick, JS Kang, ... ACS nano 8 (10), 10808-10814, 2014 | 284 | 2014 |
| HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015 | 260 | 2015 |
| MoS2 functionalization for ultra-thin atomic layer deposited dielectrics A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ... Applied Physics Letters 104 (11), 2014 | 240 | 2014 |
| Hole contacts on transition metal dichalcogenides: Interface chemistry and band alignments S McDonnell, A Azcatl, R Addou, C Gong, C Battaglia, S Chuang, K Cho, ... ACS nano 8 (6), 6265-6272, 2014 | 226 | 2014 |
| Remote Plasma Oxidation and Atomic Layer Etching of MoS2 H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace ACS Applied Materials & Interfaces 8 (29), 19119-19126, 2016 | 193 | 2016 |
| Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene S Vishwanath, X Liu, S Rouvimov, PC Mende, A Azcatl, S McDonnell, ... 2D Materials 2 (2), 024007, 2015 | 155 | 2015 |
| Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone L Cheng, X Qin, AT Lucero, A Azcatl, J Huang, RM Wallace, K Cho, J Kim ACS applied materials & interfaces 6 (15), 11834-11838, 2014 | 154 | 2014 |
| HfO2 on UV–O3 exposed transition metal dichalcogenides: interfacial reactions study A Azcatl, KC Santosh, X Peng, N Lu, S McDonnell, X Qin, F De Dios, ... 2D Materials 2 (1), 014004, 2015 | 135 | 2015 |
| Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy S Vishwanath, X Liu, S Rouvimov, L Basile, N Lu, A Azcatl, K Magno, ... Journal of Materials Research 31 (7), 900-910, 2016 | 130 | 2016 |
| Realistic metal–graphene contact structures C Gong, S McDonnell, X Qin, A Azcatl, H Dong, YJ Chabal, K Cho, ... ACS nano 8 (1), 642-649, 2014 | 120 | 2014 |
| Partially fluorinated graphene: structural and electrical characterization L Cheng, S Jandhyala, G Mordi, AT Lucero, J Huang, A Azcatl, R Addou, ... ACS applied materials & interfaces 8 (7), 5002-5008, 2016 | 110 | 2016 |
