| Challenges in material processing and reliability issues in AlGaN/GaN HEMTs on silicon wafers for future RF power electronics & switching applications: A critical review J Ajayan, D Nirmal, P Mohankumar, B Mounika, S Bhattacharya, S Tayal, ... Materials Science in Semiconductor Processing 151, 106982, 2022 | 91 | 2022 |
| Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review B Mounika, J Ajayan, S Bhattacharya, D Nirmal Micro and Nanostructures 168, 207317, 2022 | 68 | 2022 |
| Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications J Ajayan, P Mohankumar, D Nirmal, LMIL Joseph, S Bhattacharya, ... Materials Today Communications 35, 105591, 2023 | 23 | 2023 |
| 2.5 A/mm/350 GHz aggressively scaled gate engineered Fe-doped AlN/GaN channel HEMT with graded InGaN Backbarrier on SiC-wafer for next generation RF power electronics applications B Mounika, J Ajayan, S Bhattacharya Materials Science and Engineering: B 301, 117194, 2024 | 14 | 2024 |
| Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF … B Mounika, J Ajayan, S Bhattacharya, D Nirmal, VB Sreenivasulu, ... Microelectronics Journal 140, 105923, 2023 | 11 | 2023 |
| An intensive study on effects of lateral scaling and gate metals on the RF/DC performance of recessed T-gated Fe-doped AlN/GaN/SiC HEMTs for future RF and microwave power … B Mounika, J Ajayan, S Bhattacharya Microelectronic Engineering 271, 111948, 2023 | 10 | 2023 |
| Investigation on impact of AlxGa1-xN and InGaN back barriers and source-drain spacing on the DC/RF performance of Fe-doped recessed T-gated AlN/GaN HEMT on SiC wafer for future … B Mounika, J Ajayan, S Bhattacharya Micro and Nanostructures 175, 207504, 2023 | 9 | 2023 |
| Investigation of back barrier material effects on the scalability of Fe-doped recess-gated AlN/GaN HEMTs for next generation RF power electronics B Mounika, J Ajayan, S Bhattacharya, D Nirmal Micro and Nanostructures 171, 207431, 2022 | 9 | 2022 |
| A Novel LG=40 nm AlN-GDC-HEMT on SiC Wafer with fT/IDS,peak of 400 GHz/3.18 mA/mm for Future RF Power Amplifiers B Mounika, AK Panigrahy, J Ajayan, NK Basha, VB Sreenivasulu, ... IEEE Access, 2024 | 3 | 2024 |
| LG= 50 nm T-gated and Fe-doped double quantum well GaN‒HEMT on SiC wafer with graded AlGaN barrier for future power electronics applications B Mounika, J Ajayan, S Bhattacharya, D Nirmal, AK Dwivedi Journal of Science: Advanced Materials and Devices 9 (4), 100795, 2024 | 1 | 2024 |
| A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications G Deshpande, S Bhattacharya, J Ajayan, B Mounika, D Nirmal Journal of Electronic Materials 53 (8), 4287-4307, 2024 | 1 | 2024 |
| Exploration on the impact of barrier thickness, gate recess, and lateral scaling on AlGaN/GaN SRL HEMT on silicon for future RF power electronics A Akshaykranth, J Ajayan, S Bhattacharya, B Mounika Journal of Materials Science: Materials in Electronics 35 (15), 1006, 2024 | 1 | 2024 |
| Comprehensive Evaluation of T-gated AlN/GaN/SiC MOSHEMTs with ZrO2/Al2O3 Dielectrics Towards Performance Enhancement through Lateral Scaling and Passivation Optimization for … L Repaka, J Ajayan, S Bhattacharya, B Mounika Micro and Nanostructures, 208080, 2025 | | 2025 |
| Impact of Gate Metals/High-K Materials and Lateral Scaling on the Performance of AlN/GaN/AlGaN-MOSHEMT on SiC Wafer for Future Microwave Power Amplifiers in RADAR … G Deshpande, J Ajayan, S Bhattacharya, B Mounika, AK Dwivedi, ... Results in Engineering, 104156, 2025 | | 2025 |
| Nanoscale recessed T-gated ScAlN/GaN-HEMT on SiC wafer with graded back-barrier and Fe-doped buffer for future RF power amplifiers: a simulation study B Mounika, J Ajayan, AK Panigrahy, R Swain, S Sreejith Journal of the Korean Physical Society 86 (1), 31-41, 2025 | | 2025 |
| Compact Surface Potential-Based AlGaN/GaN HEMT Models J Ajayan, D Nirmal, B Mounika Modeling of AlGaN/GaN High Electron Mobility Transistors, 1-29, 2024 | | 2024 |
| Neural Network-Based GaN HEMT Modelling Techniques J Ajayan, D Nirmal, B Mounika Modeling of AlGaN/GaN High Electron Mobility Transistors, 89-108, 2024 | | 2024 |
| A review of microelectronic AlGaN/GaN HEMT biosensors for the detection of various cancer diseases and bacterial/viral pathogens L Repaka, J Ajayan, S Bhattacharya, B Mounika, A Akshaykranth, ... Microsystem Technologies, 1-16, 2024 | | 2024 |
| Analysis of Energy Efficient Reverse Carry Select Inexact Full Adders for Future In-Memory Computing and Internet of Things Applications M Sahithi, J Ajayan, P Srikavya, S Hari, T Nithin, B Mounika 2024 5th International Conference on Circuits, Control, Communication and …, 2024 | | 2024 |
| Performance Evaluation of Nanoscale Gate Engineered AlN/GaN Recessed T-gated HEMT with Fe-doped Buffer for Future Power Electronic Applications JASB B. Mounika Nano World Journal 9 (5), 132-136, 2023 | | 2023 |
Dr. J. AjayanProfessor at SR UniversityVerifisert e-postadresse på sru.edu.in