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Richard Arès
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Ultrahigh efficiencies in vertical epitaxial heterostructure architectures
S Fafard, MCA York, F Proulx, CE Valdivia, MM Wilkins, R Arès, V Aimez, ...
Applied Physics Letters 108 (7), 2016
1232016
High-photovoltage GaAs vertical epitaxial monolithic heterostructures with 20 thin p/n junctions and a conversion efficiency of 60%
S Fafard, F Proulx, MCA York, LS Richard, PO Provost, R Arès, V Aimez, ...
Applied Physics Letters 109 (13), 2016
1042016
Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etchingwith N2-promoted passivation
M Volatier, D Duchesne, R Morandotti, R Ares, V Aimez
Nanotechnology 21 (13), 134014, 2010
1022010
Performance comparison of AlGaAs, GaAs and InGaP tunnel junctions for concentrated multijunction solar cells
JF Wheeldon, CE Valdivia, AW Walker, G Kolhatkar, A Jaouad, A Turala, ...
Progress in Photovoltaics: Research and Applications 19 (4), 442-452, 2011
972011
Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
YA Bioud, A Boucherif, M Myronov, A Soltani, G Patriarche, N Braidy, ...
Nature communications 10 (1), 4322, 2019
742019
Second harmonic generation in AlGaAs photonic wires using low power continuous wave light
D Duchesne, KA Rutkowska, M Volatier, F Légaré, S Delprat, M Chaker, ...
Optics express 19 (13), 12408-12417, 2011
692011
Low loss directional coupling between highly dissimilar optical waveguides for high refractive index integrated photonic circuits
E Grondin, G Beaudin, V Aimez, R Ares, PG Charette
US Patent 8,787,712, 2014
612014
Mesoporous germanium morphology transformation for lift-off process and substrate re-use
A Boucherif, G Beaudin, V Aimez, R Ares
Applied Physics Letters 102 (1), 2013
602013
Antireflection coating design for triple-junction III–V/Ge high-efficiency solar cells using low absorption PECVD silicon nitride
R Homier, A Jaouad, A Turala, CE Valdivia, D Masson, SG Wallace, ...
IEEE Journal of Photovoltaics 2 (3), 393-397, 2012
562012
Fast growth synthesis of mesoporous germanium films by high frequency bipolar electrochemical etching
YA Bioud, A Boucherif, A Belarouci, E Paradis, S Fafard, V Aimez, ...
Electrochimica Acta 232, 422-430, 2017
552017
Chemical composition of nanoporous layer formed by electrochemical etching of p-Type GaAs
YA Bioud, A Boucherif, A Belarouci, E Paradis, D Drouin, R Arès
Nanoscale research letters 11, 1-8, 2016
542016
Five-volt vertically-stacked, single-cell GaAs photonic power converter
CE Valdivia, MM Wilkins, B Bouzazi, A Jaouad, V Aimez, R Arès, ...
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV …, 2015
482015
Mesoporous Germanium formed by bipolar electrochemical etching
S Tutashkonko, A Boucherif, T Nychyporuk, A Kaminski-Cachopo, R Arès, ...
Electrochimica Acta 88, 256-262, 2013
472013
Observation of one-and two-dimensional discrete surface spatial solitons
S Suntsov, KG Makris, GA Siviloglou, R Iwanow, R Schiek, ...
Journal of Nonlinear Optical Physics & Materials 16 (04), 401-426, 2007
462007
Calibrated scanning spreading resistance microscopy profiling of carriers in III–V structures
RP Lu, KL Kavanagh, SJ Dixon-Warren, A Kuhl, AJ SpringThorpe, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
442001
High mobility InAs grown on GaAs substrates using tertiarybutylarsine and trimethylindium
SP Watkins, CA Tran, R Ares, G Soerensen
Applied physics letters 66 (7), 882-884, 1995
441995
Nonlinear scattering and trapping by local photonic potentials
Y Linzon, R Morandotti, M Volatier, V Aimez, R Ares, S Bar-Ad
Physical review letters 99 (13), 133901, 2007
432007
Approaching the Shockley-Queisser limit: General assessment of the main limiting mechanisms in photovoltaic cells
A Vossier, F Gualdi, A Dollet, R Ares, V Aimez
Journal of Applied Physics 117 (1), 2015
422015
Measurement of strong photon recycling in ultra‐thin GaAs n/p junctions monolithically integrated in high‐photovoltage vertical epitaxial heterostructure architectures with …
F Proulx, MCA York, PO Provost, R Arès, V Aimez, DP Masson, S Fafard
physica status solidi (RRL)–Rapid Research Letters 11 (2), 1600385, 2017
412017
Optimized pre-treatment process for MOS-GaN devices passivation
A Chakroun, H Maher, E Al Alam, A Souifi, V Aimez, R Arès, A Jaouad
IEEE Electron Device Letters 35 (3), 318-320, 2014
412014
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