| Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation IP Vali, PK Shetty, MG Mahesha, VC Petwal, J Dwivedi, RJ Choudhary Applied Surface Science 407, 171-176, 2017 | 24 | 2017 |
| Structural and optical studies of gamma irradiated N-doped 4H-SiC IP Vali, PK Shetty, MG Mahesha, VG Sathe, DM Phase, RJ Choudhary Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2019 | 22 | 2019 |
| Bamboo and coconut shell based activated carbon: a Raman spectroscopic study IP Vali, BS Anusha, M Pruthvija, S Savitha, S Ravindra, M Nagaveni, ... Materials Chemistry and Physics 318, 129240, 2024 | 20 | 2024 |
| Electron and gamma irradiation effects on Al/n‒4H–SiC Schottky contacts IP Vali, PK Shetty, MG Mahesha, VC Petwal, J Dwivedi, DM Phase, ... Vacuum 172, 109068, 2020 | 19 | 2020 |
| Gamma irradiation effects on Al/n-Si Schottky junction properties RJC Indudhar PandurangaVali, Pramoda Kumara Shetty, M. G. Mahesha, Rashmitha ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2018 | 16 | 2018 |
| Thermal neutron irradiation effects on structural and electrical properties of n-type 4H‒SiC IP Vali, PK Shetty, MG Mahesha, MN Rao, S Kesari Journal of Materials Science: Materials in Electronics 31, 8496-8501, 2020 | 8 | 2020 |
| Gamma and neutron irradiation effects on the structural and optical properties of potash alum crystals AN Prabhu, PK Shetty, IP Vali, H Kumar, S Udupa Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2017 | 8 | 2017 |
| Implications of electron beam irradiation on Al/n-Si Schottky junction properties IP Vali, PK Shetty, MG Mahesha, VC Petwal, J Dwivedi, DM Phase, ... Microelectronics Reliability 91, 179-184, 2018 | 6 | 2018 |
| Gamma irradiation effects on n-ZnSe/n-Si isotype heterojunctions IP Vali, R Keshav, M Rajeshwari, KS Vaishnavi, MG Mahesha, P Shetty Silicon, 2021 | 2 | 2021 |
| I–V characterization of vacuum deposited zinc selenide–silicon hetero junction MG Mahesha, R Keshav, PK Shettya, M Rajeshwari Indian Journal of Pure & Applied Physics (IJPAP) 58 (12), 841-846, 2020 | 1 | 2020 |
| Conduction mechanism in electron beam irradiated Al/n-Si Schottky diode IP Vali, PK Shetty, MG Mahesha, VC Petwal Proceedings of the DAE-BRNS Symp. on Nucl. Phys 61, 1102, 2016 | | 2016 |
| Tuning of Schottky barrier height of Al/n-Si by electron IP Vali, PK Shetty Solid. State. Electron 22, 865-873, 1979 | | 1979 |
| Nuclear Inst. and Methods in Physics Research B AN Prabhu, PK Shetty, IP Vali, H Kumar, S Udupa | | |
Pramoda Kumara ShettyPhysics Department, Manipal Institute of Technology, Manipal Academy of Higher Education, ManipalVerifisert e-postadresse på manipal.edu