Amorphous molybdenum sulfide catalysts for electrochemical hydrogen production: insights into the origin of their catalytic activity JD Benck, Z Chen, LY Kuritzky, AJ Forman, TF Jaramillo
Acs Catalysis 2 (9), 1916-1923, 2012
1137 2012 Light emitting diode with conformal surface electrical contacts with glass encapsulation JS Speck, CCA Weisbuch, N Pfaff, L Kuritzky, CL Keraly
US Patent App. 13/623,472, 2013
304 2013 Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN LY Kuritzky, JS Speck
MRS Communications 5 (3), 463-473, 2015
97 2015 Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells S Marcinkevičius, KM Kelchner, LY Kuritzky, S Nakamura, SP DenBaars, ...
Applied Physics Letters 103 (11), 111107, 2013
59 2013 Efficient and Scalable GaInAs Thermophotovoltaic Devices EJ Tervo, RM France, DJ Friedman, MK Arulanandam, RR King, ...
arXiv preprint arXiv:2207.00565, 2022
51 2022 Prospects for 100% wall-plug efficient III-nitride LEDs LY Kuritzky, C Weisbuch, JS Speck
Optics Express 26 (13), 16600-16608, 2018
51 2018 High wall-plug efficiency blue III-nitride LEDs designed for low current density operation LY Kuritzky, AC Espenlaub, BP Yonkee, CD Pynn, SP DenBaars, ...
Optics Express 25 (24), 30696-30707, 2017
44 2017 Chemical defense by the native winter ant (Prenolepis imparis) against the invasive Argentine ant (Linepithema humile) TR Sorrells, LY Kuritzky, PG Kauhanen, K Fitzgerald, SJ Sturgis, J Chen, ...
PloS one 6 (4), e18717, 2011
41 2011 World record demonstration of> 30% thermophotovoltaic conversion efficiency TC Narayan, LY Kuritzky, DP Nizamian, BA Johnson, EJ Tervo, AR Young, ...
2020 47th IEEE Photovoltaic Specialists Conference (PVSC), 1792-1795, 2020
35 2020 Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates KM Kelchner, LY Kuritzky, K Fujito, S Nakamura, SP DenBaars, JS Speck
Journal of Crystal Growth 382, 80-86, 2013
35 2013 Interwell carrier transport in InGaN/(In) GaN multiple quantum wells S Marcinkevičius, R Yapparov, LY Kuritzky, YR Wu, S Nakamura, ...
Applied Physics Letters 114 (15), 151103, 2019
33 2019 Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯ 1¯) III-nitride laser diodes with chemically assisted ion beam … DL Becerra, LY Kuritzky, J Nedy, AS Abbas, A Pourhashemi, RM Farrell, ...
Applied Physics Letters 108 (9), 091106, 2016
29 2016 Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN LY Kuritzky, DL Becerra, AS Abbas, J Nedy, S Nakamura, SP DenBaars, ...
Semiconductor Science and Technology 31 (7), 075008, 2016
27 2016 Stable vicinal step orientations in m-plane GaN KM Kelchner, LY Kuritzky, S Nakamura, SP DenBaars, JS Speck
Journal of Crystal Growth 411, 56-62, 2015
23 2015 Polarization-resolved near-field spectroscopy of localized states in m-plane (In,Ga)N/GaN quantum wells DS Ivanov, S Marcinkevičius, MD Mensi, O Martinez, LY Kuritzky, ...
Physical Review Applied 7, 064003, 2017
20 2017 Light Extraction Efficiency Part A. Ray Tracing for Light Extraction Efficiency (LEE) Modeling in Nitride LEDs CL Keraly, L Kuritzky, M Cochet, C Weisbuch
III-Nitride Based Light Emitting Diodes and Applications, 231-269, 2013
20 2013 Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells R Ivanov, S Marcinkevičius, TK Uždavinys, LY Kuritzky, S Nakamura, ...
Applied Physics Letters 110 (3), 031109, 2017
19 2017 Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition DA Browne, MN Fireman, B Mazumder, LY Kuritzky, YR Wu, JS Speck
Semiconductor Science and Technology 32 (2), 025010, 2017
18 2017 Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited -Plane and -Plane ( , ) Quantum Wells R Aleksiejūnas, K Nomeika, O Kravcov, S Nargelas, L Kuritzky, C Lynsky, ...
Physical Review Applied 14 (5), 054043, 2020
15 2020 Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations M Khoury, H Li, B Bonef, LY Kuritzky, AJ Mughal, S Nakamura, JS Speck, ...
Applied Physics Express 11 (3), 036501, 2018
14 2018