High-power low-droop violet semipolar (303¯ 1¯) InGaN/GaN light-emitting diodes with thick active layer design DL Becerra, Y Zhao, SH Oh, CD Pynn, K Fujito, SP DenBaars, ...
Applied Physics Letters 105 (17), 171106, 2014
69 2014 Dynamic characteristics of 410 nm semipolar (202¯ 1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz C Lee, C Zhang, DL Becerra, S Lee, CA Forman, SH Oh, RM Farrell, ...
Applied Physics Letters 109 (10), 101104, 2016
47 2016 Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating H Zhang, DA Cohen, P Chan, MS Wong, S Mehari, DL Becerra, ...
Optics Letters 44 (12), 3106-3109, 2019
41 2019 Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯ 1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers S Mehari, DA Cohen, DL Becerra, S Nakamura, SP DenBaars
Optics Express 26 (2), 1564-1572, 2018
39 2018 High spatial uniformity of photoluminescence spectra in semipolar (202 1) plane InGaN/GaN quantum wells K Gelžinytė, R Ivanov, S Marcinkevičius, Y Zhao, DL Becerra, ...
Journal of Applied Physics 117 (2), 023111, 2015
38 2015 Impact of carrier localization on radiative recombination times in semipolar (202¯ 1) plane InGaN/GaN quantum wells R Ivanov, S Marcinkevičius, Y Zhao, DL Becerra, S Nakamura, ...
Applied Physics Letters 107 (21), 211109, 2015
30 2015 Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar III-nitride laser diodes with chemically assisted ion … DL Becerra, LY Kuritzky, J Nedy, A Saud Abbas, A Pourhashemi, ...
Applied Physics Letters 108 (9), 091106, 2016
29 2016 Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN LY Kuritzky, DL Becerra, AS Abbas, J Nedy, S Nakamura, SP DenBaars, ...
Semiconductor Science and Technology 31 (7), 075008, 2016
27 2016 Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture L Megalini, DL Becerra, RM Farrell, A Pourhashemi, JS Speck, ...
Applied Physics Express 8 (4), 042701, 2015
21 2015 Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes SW Hamdy, EC Young, AI Alhassan, DL Becerra, SP DenBaars, JS Speck, ...
Optics express 27 (6), 8327-8334, 2019
20 2019 Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time-and spatially-resolved near-field photoluminescence TK Uždavinys, DL Becerra, R Ivanov, SP DenBaars, S Nakamura, ...
Optical Materials Express 7 (9), 3116-3123, 2017
16 2017 Semipolar InGaN blue laser diodes with a low optical loss and a high material gain obtained by suppression of carrier accumulation in the p-waveguide region S Mehari, DA Cohen, DL Becerra, S Nakamura, SP DenBaars
Japanese Journal of Applied Physics 58 (2), 020902, 2019
15 2019 Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization DL Becerra, DA Cohen, S Mehari, SP DenBaars, S Nakamura
Journal of Crystal Growth 507, 118-123, 2019
9 2019 Effects of active region design on gain and carrier injection and transport of CW semipolar InGaN laser diodes DL Becerra, DA Cohen, RM Farrell, SP DenBaars, S Nakamura
Applied Physics Express 9 (9), 092104, 2016
9 2016 CW operation of high-power blue laser diodes with polished facets on semi-polar (20 2¯ 1¯) GaN substrates A Pourhashemi, RM Farrell, DA Cohen, DL Becerra, SP DenBaars, ...
Electronics Letters 52 (24), 2003-2005, 2016
8 2016 Properties of near-field photoluminescence in green emitting single and multiple semipolar (202¯ 1) plane InGaN/GaN quantum wells MD Mensi, DL Becerra, R Ivanov, S Marcinkevičius, S Nakamura, ...
Optical Materials Express 6 (1), 39-45, 2016
8 2016 High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication C Lee, C Zhang, D Becerra, S Lee, SH Oh, RM Farrell, JS Speck, ...
2016 IEEE Photonics Conference (IPC), 809-810, 2016
7 2016 Semipolar III-nitride laser diodes for solid-state lighting S Mehari, DA Cohen, DL Becerra, H Zhang, C Weisbuch, JS Speck, ...
Novel In-Plane Semiconductor Lasers XVIII 10939, 45-50, 2019
5 2019 Semipolar III-nitride laser diodes for solid-state lighting C Weisbuch, JS Speck, S Nakamura, SP Denbaars, DL Becerra, H Zhang, ...
Novel In-Plane Semiconductor Lasers XVIII, 2019
1 2019 High efficiency semipolar III-nitride lasers for solid state lighting DL Becerra, DA Cohen, RM Farrell, SP DenBaars, S Nakamura
2016 International Semiconductor Laser Conference (ISLC), 1-2, 2016
1 2016