Theodore D Moustakas

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Roberto PaiellaProfessor of Electrical and Computer Engineering, Boston UniversityVerifisert e-postadresse på bu.edu
Anirban BhattacharyyaUniversity of CalcuttaVerifisert e-postadresse på caluniv.ac.in
Hock M. NgOctopus Innovation PartnersVerifisert e-postadresse på octoip.com
Karl LudwigProfessor of Physics, Boston UniversityVerifisert e-postadresse på bu.edu
Eleftherios IliopoulosDepartment of Physics, University of Crete & IESL-FORTHVerifisert e-postadresse på physics.uoc.gr
Emmanouil DimakisGroup leader, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum DresdenVerifisert e-postadresse på hzdr.de
Dimitris KorakakisVerifisert e-postadresse på mail.wvu.edu
Yitao LiaoBoston UniversityVerifisert e-postadresse på bu.edu
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaVerifisert e-postadresse på unimib.it
Piotr PerlinInstitute of High Pressure PhysicsVerifisert e-postadresse på unipress.waw.pl
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesVerifisert e-postadresse på ifpan.edu.pl
Luca Dal NegroProfessor of Electrical and Computer Engineering, Boston UniversityVerifisert e-postadresse på bu.edu
Michał LeszczynskiVerifisert e-postadresse på unipress.waw.pl
Wei ZhangBoston University Photonics CenterVerifisert e-postadresse på physics.bu.edu
Soumendra BasuAssociate Division Head, Materials Science & Engineering; Professor, Mechanical Engineering, BostonVerifisert e-postadresse på bu.edu
Papo Chen, T.C. Chen, Tai-Chou Che...Boston UniversityVerifisert e-postadresse på amat.com
Enrico BellottiBoston University Georgia Institute of TechnologyVerifisert e-postadresse på bu.edu
HAIDING SUNProfessor of University of Science and Technology of ChinaVerifisert e-postadresse på ustc.edu.cn
Eleni PalouraProfessor of Physics, Aristotle University of ThessalonikiVerifisert e-postadresse på auth.gr
Katsikini M.Aristotle University of ThessalonikiVerifisert e-postadresse på auth.gr

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Theodore D Moustakas

Boston University, Electrical and Computer Engineering Department

Verifisert e-postadresse på bu.edu - Startside

nitride semiconductors amorphous semiconductors III-V compounds diamond thin films and metallic


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Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas Journal of Applied Physics 83 (7), 3656-3659, 1998	818	1998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition R Singh, D Doppalapudi, TD Moustakas, LT Romano Applied Physics Letters 70 (9), 1089-1091, 1997	642	1997
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon T Lei, TD Moustakas, RJ Graham, Y He, SJ Berkowitz Journal of Applied Physics 71 (10), 4933-4943, 1992	568	1992
The role of dislocation scattering in n-type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman Applied physics letters 73 (6), 821-823, 1998	561	1998
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon Applied physics letters 59 (8), 944-946, 1991	559	1991
Metal contacts to gallium nitride JS Foresi, TD Moustakas Applied physics letters 62 (22), 2859-2861, 1993	523	1993
Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995	424	1995
Growth of GaN by ECR-assisted MBE TD Moustakas, T Lei, RJ Molnar Physica B: Condensed Matter 185 (1-4), 36-49, 1993	369	1993
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates T Lei, KF Ludwig Jr, TD Moustakas Journal of applied physics 74 (7), 4430-4437, 1993	362	1993
Optical Devices Featuring textured semiconductor layers JSC TD Moustakas US Patent 8,035,113, 2011	337	2011
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy D Doppalapudi, SN Basu, KF Ludwig Jr, TD Moustakas Journal of applied physics 84 (3), 1389-1395, 1998	336	1998
Gallium Nitride (GaN) JI Pankove, TD Moustakas (No Title), 1998	335	1998
Doping, Schottky barrier and p n junction formation in amorphous germanium and silicon by rf sputtering W Paul, AJ Lewis, GAN Connell, TD Moustakas Solid State Communications 20 (10), 969-972, 1976	313	1976
Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994	292	1994
Effect of nitrogen on the growth of diamond films S Jin, TD Moustakas Applied Physics Letters 65 (4), 403-405, 1994	289	1994
Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995	282	1995
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ... Journal of Applied Physics 76 (4), 2429-2434, 1994	253	1994
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species RJ Molnar, TD Moustakas Journal of Applied Physics 76 (8), 4587-4595, 1994	240	1994
Electron transport mechanism in gallium nitride RJ Molnar, T Lei, TD Moustakas Applied physics letters 62 (1), 72-74, 1993	239	1993
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy RJ Molnar, R Singh, TD Moustakas Applied physics letters 66 (3), 268-270, 1995	222	1995

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