Semiconductor device including an InGaAIN layer N Sawaki, Y Honda, N Koide, K Furukawa
US Patent 6,635,901, 2003
202 * 2003 Correlation between dislocations and leakage current of pn diodes on a free-standing GaN substrate S Usami, Y Ando, A Tanaka, K Nagamatsu, M Deki, M Kushimoto, S Nitta, ...
Applied Physics Letters 112 (18), 2018
198 2018 Growth of GaN free from cracks on a (111) Si substrate by selective metalorganic vapor-phase epitaxy Y Honda, Y Kuroiwa, M Yamaguchi, N Sawaki
Applied Physics Letters 80 (2), 222-224, 2002
165 2002 Semiconductor light emitting device and method for producing the same N Koide, J Yamamoto, T Dohkita, N Sawaki, Y Honda, Y Kuroiwa, ...
US Patent 6,806,115, 2004
157 * 2004 Growth of (11̄01) GaN on a 7-degree off-oriented (0 0 1) Si substrate by selective MOVPE Y Honda, N Kameshiro, M Yamaguchi, N Sawaki
Journal of crystal growth 242 (1-2), 82-86, 2002
133 2002 Progress and prospect of the growth of wide-band-gap group III nitrides: Development of the growth method for single-crystal bulk GaN H Amano
Japanese Journal of Applied Physics 52 (5R), 050001, 2013
121 2013 Growth and properties of semi-polar GaN on a patterned silicon substrate N Sawaki, T Hikosaka, N Koide, S Tanaka, Y Honda, M Yamaguchi
Journal of Crystal Growth 311 (10), 2867-2874, 2009
112 2009 AlGaN-based deep ultraviolet light-emitting diodes fabricated on patterned sapphire substrates M Kim, T Fujita, S Fukahori, T Inazu, C Pernot, Y Nagasawa, A Hirano, ...
Applied physics express 4 (9), 092102, 2011
111 2011 Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique BO Jung, SY Bae, Y Kato, M Imura, DS Lee, Y Honda, H Amano
CrystEngComm 16 (11), 2273-2282, 2014
105 2014 Growth of semi‐polar (11‐22) GaN on a (113) Si substrate by selective MOVPE T Tanikawa, T Hikosaka, Y Honda, M Yamaguchi, N Sawaki
physica status solidi c 5 (9), 2966-2968, 2008
103 2008 Improvement of light extraction efficiency for AlGaN-based deep ultraviolet light-emitting diodes T Inazu, S Fukahori, C Pernot, MH Kim, T Fujita, Y Nagasawa, A Hirano, ...
Japanese Journal of Applied Physics 50 (12R), 122101, 2011
90 2011 Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown H Fukushima, S Usami, M Ogura, Y Ando, A Tanaka, M Deki, ...
Applied Physics Express 12 (2), 026502, 2019
87 2019 Optical and electrical properties of T Hikosaka, T Narita, Y Honda, M Yamaguchi, N Sawaki
Applied physics letters 84 (23), 4717-4719, 2004
83 2004 Selective area growth of GaN on Si substrate using SiO 2 mask by metalorganic vapor phase epitaxy YKY Kawaguchi, YHY Honda, HMH Matsushima, MYM Yamaguchi, ...
Japanese journal of applied physics 37 (8B), L966, 1998
78 1998 Uneven AlGaN multiple quantum well for deep-ultraviolet LEDs grown on macrosteps and impact on electroluminescence spectral output M Kaneda, C Pernot, Y Nagasawa, A Hirano, M Ippommatsu, Y Honda, ...
Japanese Journal of Applied Physics 56 (6), 061002, 2017
76 2017 Selective area growth of GaN microstructures on patterned (1 1 1) and (0 0 1) Si substrates Y Honda, Y Kawaguchi, Y Ohtake, S Tanaka, M Yamaguchi, N Sawaki
Journal of crystal growth 230 (3-4), 346-350, 2001
71 2001 On-wafer fabrication of etched-mirror UV-C laser diodes with the ALD-deposited DBR T Sakai, M Kushimoto, Z Zhang, N Sugiyama, LJ Schowalter, Y Honda, ...
Applied Physics Letters 116 (12), 2020
67 2020 Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy X Yang, S Nitta, K Nagamatsu, SY Bae, HJ Lee, Y Liu, M Pristovsek, ...
Journal of Crystal Growth 482, 1-8, 2018
66 2018 Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes L Sang, B Ren, M Sumiya, M Liao, Y Koide, A Tanaka, Y Cho, Y Harada, ...
Applied physics letters 111 (12), 2017
64 2017 Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region BO Jung, SY Bae, SY Kim, S Lee, JY Lee, DS Lee, Y Kato, Y Honda, ...
Nano Energy 11, 294-303, 2015
62 2015 