Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ...
2012 symposium on VLSI technology (VLSIT), 25-26, 2012
333 2012 High endurance ferroelectric hafnium oxide-based FeFET memory without retention penalty T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ...
IEEE Transactions on Electron Devices 65 (9), 3769-3774, 2018
271 2018 A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, M Rudolph, ...
2019 IEEE International Electron Devices Meeting (IEDM), 28.7. 1-28.7. 4, 2019
137 2019 Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ...
Applied Physics Letters 112 (22), 2018
135 2018 Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon A Fissel, Z Elassar, O Kirfel, E Bugiel, M Czernohorsky, HJ Osten
Journal of applied Physics 99 (7), 2006
129 2006 Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si (001) M Czernohorsky, E Bugiel, HJ Osten, A Fissel, O Kirfel
Applied Physics Letters 88 (15), 2006
121 2006 Introducing crystalline rare‐earth oxides into Si technologies HJ Osten, A Laha, M Czernohorsky, E Bugiel, R Dargis, A Fissel
physica status solidi (a) 205 (4), 695-707, 2008
111 2008 CMOS integration of epitaxial Gd2O3 high-k gate dielectrics HDB Gottlob, T Echtermeyer, T Mollenhauer, JK Efavi, M Schmidt, ...
Solid-State Electronics 50 (6), 979-985, 2006
64 2006 0.86-nm CET Gate Stacks With Epitaxial HDB Gottlob, T Echtermeyer, M Schmidt, T Mollenhauer, JK Efavi, ...
IEEE electron device letters 27 (10), 814-816, 2006
56 2006 Doping concentration dependent piezoelectric behavior of Si: HfO2 thin-films S Kirbach, M Lederer, S Eßlinger, C Mart, M Czernohorsky, W Weinreich, ...
Applied Physics Letters 118 (1), 2021
52 2021 High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates K Kühnel, M Czernohorsky, C Mart, W Weinreich
Journal of Vacuum Science & Technology B 37 (2), 2019
46 2019 A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability T Ali, K Kühnel, M Czernohorsky, C Mart, M Rudolph, B Pätzold, ...
IEEE Transactions on Electron Devices 67 (7), 2981-2987, 2020
45 * 2020 Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing M Czernohorsky, D Tetzlaff, E Bugiel, R Dargis, HJ Osten, HDB Gottlob, ...
Semiconductor science and technology 23 (3), 035010, 2008
44 2008 Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices F Ali, T Ali, D Lehninger, A Sünbül, A Viegas, R Sachdeva, A Abbas, ...
Advanced Functional Materials 32 (27), 2201737, 2022
42 2022 Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles C Mart, T Kämpfe, R Hoffmann, S Eßlinger, S Kirbach, K Kühnel, ...
Advanced Electronic Materials 6 (3), 1901015, 2020
40 2020 Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide A Fissel, M Czernohorsky, HJ Osten
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
37 2006 Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures HJ Osten, D Kühne, A Laha, M Czernohorsky, E Bugiel, A Fissel
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
36 2007 Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application A Fissel, M Czernohorsky, HJ Osten
Superlattices and Microstructures 40 (4-6), 551-556, 2006
34 2006 Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO2 ) Thin Films on Area‐Enhanced Substrates B Hanrahan, C Mart, T Kämpfe, M Czernohorsky, W Weinreich, A Smith
Energy Technology 7 (10), 1900515, 2019
31 2019 Optimizing ferroelectric and interface layers in HZO-based FTJs for neuromorphic applications A Sünbül, T Ali, K Mertens, R Revello, D Lehninger, F Müller, M Lederer, ...
IEEE Transactions on Electron Devices 69 (2), 808-815, 2021
29 2021 
Jonas SundqvistSenior Scientist, Fraunhofer CNTVerifisert e-postadresse på cnt.fraunhofer.de