Byoung Hun Lee

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Rino ChoiProfessor of Materials Science and Eng., Inha UniversityVerifisert e-postadresse på inha.ac.kr
Chadwin D. YoungUniversity of Texas at DallasVerifisert e-postadresse på utdallas.edu
prashant majhiIntel Corp.Verifisert e-postadresse på intel.com
Hyeon Jun HwangPohang University of Science and TechnologyVerifisert e-postadresse på postech.ac.kr
Kisik ChoiIBMVerifisert e-postadresse på ibm.com
Huang-Chun WenTexas InstrumentsVerifisert e-postadresse på ti.com
Hyunsang HwangPOSTECH, KoreaVerifisert e-postadresse på postech.ac.kr
Husam N AlshareefProfessor & CREST Director at KAUST; Adjunct Professor at the University of Texas at Dallas, USAVerifisert e-postadresse på kaust.edu.sa
Joel BarnettTokyo ElectronVerifisert e-postadresse på us.tel.com
Tae Jin YooimecVerifisert e-postadresse på imec.be
Young Gon LeeSK hynixVerifisert e-postadresse på sk.com
Chunhum ChoDepartment of Nanobio Materials and Electronics, Gwangju Institute of Science and TechnologyVerifisert e-postadresse på gist.ac.kr
Manuel Quevedo-lopezUniversity of Texas at DallasVerifisert e-postadresse på utdallas.edu
So-Young KimIBM T.J. Watson Research CenterVerifisert e-postadresse på ibm.com
Sangchul LeePostdoctoral research associate at Stevens Insitute of TechnologyVerifisert e-postadresse på stevens.edu
MUHAMMAD MUSTAFA HUSSAINPurdue ECE (Since 2022), UC Berkeley (2019-2021), KAUST (2009-2022), SEMATECH (2006-2009)Verifisert e-postadresse på purdue.edu
Sundararaman Gopalan (Sundar Gop...Professor, Electronics and Communication Engineering, Amrita Vishwa Vidyapeetham, Amritapuri CampusVerifisert e-postadresse på am.amrita.edu
Lee Sang KyungAlpha Graphene Inc.Verifisert e-postadresse på gist.ac.kr
Woojin ParkGwangju Institute of Science and TechnologyVerifisert e-postadresse på kaust.edu.sa
Moon-Ho HamGwangju Institute of Science and TechnologyVerifisert e-postadresse på gist.ac.kr

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Byoung Hun Lee

Pohang University of Science and Technology

Verifisert e-postadresse på postech.ac.kr - Startside

Graphene/2D devices Extreme low power technology


Tittel Sorter etter sitater Sorter etter år Sorter etter tittel	Sitert av Sitert av	År
Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing BH Lee, L Kang, R Nieh, WJ Qi, JC Lee Applied Physics Letters 76 (14), 1926-1928, 2000	792	2000
Charge-transfer-based Gas Sensing Using Atomic-layer MoS₂ B Cho, MG Hahm, M Choi, J Yoon, AR Kim, YJ Lee, SG Park, JD Kwon, ... Scientific reports 5 (1), 8052, 2015	659	2015
Chemical Sensing of 2D Graphene/MoS₂ Heterostructure device B Cho, J Yoon, SK Lim, AR Kim, DH Kim, SG Park, JD Kwon, YJ Lee, ... ACS applied materials & interfaces 7 (30), 16775-16780, 2015	477	2015
Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application BH Lee, L Kang, WJ Qi, R Nieh, Y Jeon, K Onishi, JC Lee International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999	401	1999
Negative oxygen vacancies in HfO2 as charge traps in high-k stacks JL Gavartin, D Muñoz Ramo, AL Shluger, G Bersuker, BH Lee Applied Physics Letters 89 (8), 2006	379	2006
Highly flexible and transparent multilayer MoS2 transistors with graphene electrodes J Yoon, W Park, GY Bae, Y Kim, HS Jang, Y Hyun, SK Lim, YH Kahng, ... Small 9 (19), 3295-3300, 2013	376	2013
Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric L Kang, BH Lee, WJ Qi, Y Jeon, R Nieh, S Gopalan, K Onishi, JC Lee IEEE Electron Device Letters 21 (4), 181-183, 2000	349	2000
Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014	333	2014
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscaletitanium oxide bilayer resistive switching device K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ... Nanotechnology 22 (25), 254023, 2011	322	2011
MOSCAP and MOSFET characteristics using ZrO/sub 2/gate dielectric deposited directly on Si WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, K Onishi, T Ngai, S Banerjee, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999	260	1999
High-density low-power-operating DRAM device adopting 6F/sup 2/cell scheme with novel S-RCAT structure on 80nm feature size and beyond HJ Oh, JY Kim, JH Kim, SG Park, DH Kim, SE Kim, DS Woo, YS Lee, ... Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005	257	2005
The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond JY Kim, DS Woo, HJ Oh, HJ Kim, SE Kim, BJ Park, JM Kwon, MS Shim, ... IEEE VLSI-TSA International Symposium on VLSI Technology, 2005.(VLSI-TSA …, 2005	256	2005
Electrical and reliability characteristics of deposited directly on Si for gate dielectric application WJ Qi, R Nieh, BH Lee, L Kang, Y Jeon, JC Lee Applied Physics Letters 77 (20), 3269-3271, 2000	241	2000
Gate stack technology for nanoscale devices BH Lee, J Oh, HH Tseng, R Jammy, H Huff materials today 9 (6), 32-40, 2006	240	2006
RRAM-based synapse for neuromorphic system with pattern recognition function S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ... 2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012	228	2012
A Novel Pattern Transfer Process for Bonded SOI Giga-bit DRAMs BH Lee, GJ Bae, KW Lee, G Cha, WD Kim, SI Lee, T Barge, ... 1996 IEEE International SOI Conference Proceedings, 114-115, 1996	219	1996
Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ... Applied Physics Letters 92 (9), 2008	215	2008
Electronic system with memristive synapses for pattern recognition S Park, M Chu, J Kim, J Noh, M Jeon, B Hun Lee, H Hwang, B Lee, B Lee Scientific reports 5 (1), 10123, 2015	212	2015
Sub‐10 nm graphene nanoribbon array field‐effect transistors fabricated by block copolymer lithography JG Son, M Son, KJ Moon, BH Lee, JM Myoung, MS Strano, MH Ham, ... Advanced Materials 25 (34), 4723-4728, 2013	212	2013
Neuromorphic speech systems using advanced ReRAM-based synapse S Park, A Sheri, J Kim, J Noh, J Jang, M Jeon, B Lee, BR Lee, BH Lee, ... 2013 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2013	208	2013

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