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HAO TANG
HAO TANG
IBM
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Air spacer for 10nm FinFET CMOS and beyond
K Cheng, C Park, C Yeung, S Nguyen, J Zhang, X Miao, M Wang, ...
2016 IEEE International Electron Devices Meeting (IEDM), 17.1. 1-17.1. 4, 2016
602016
EUV patterning successes and frontiers
N Felix, D Corliss, K Petrillo, N Saulnier, Y Xu, L Meli, H Tang, A De Silva, ...
Extreme Ultraviolet (EUV) Lithography VII 9776, 480-486, 2016
412016
Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices
RQH L. F. Liu, J. F. Kang, H. Tang, N. Xu, Y. Wang, X.. Y. Liu, X. Zhang
International Conference on Solid State Devices and Materials, 2007
40*2007
BEOL process integration for the 7 nm technology node
T Standaert, G Beique, HC Chen, ST Chen, B Hamieh, J Lee, ...
2016 IEEE international interconnect technology conference/advanced …, 2016
372016
Multi-layer filled gate cut to prevent power rail shorting to gate structure
K Cheng, H Tang, P Xu
US Patent 9,805,983, 2017
222017
Comparison of left and right side line edge roughness in lithography
L Sun, N Saulnier, G Beique, E Verduijn, W Wang, Y Xu, H Tang, Y Chen, ...
Metrology, Inspection, and Process Control for Microlithography XXX 9778 …, 2016
222016
Electrical test prediction using hybrid metrology and machine learning
M Breton, R Chao, GR Muthinti, A Abraham, J Simon, AJ Cepler, ...
Metrology, Inspection, and Process Control for Microlithography XXXI 10145 …, 2017
202017
The influence of hydrogen annealing on magnetism of Co-doped TiO2 films prepared by sol–gel method
LF Liu, JF Kang, Y Wang, H Tang, LG Kong, L Sun, X Zhang, RQ Han
Journal of magnetism and magnetic materials 308 (1), 85-89, 2007
202007
The role of oxygen vacancies in magnetism of CoxTi1− xO2− δ films on Si (001) prepared by sol–gel method
LF Liu, JF Kang, Y Wang, H Tang, LG Kong, X Zhang, RQ Han
Solid state communications 139 (6), 263-267, 2006
192006
Analysis of DNA-guided self-assembly of microspheres using imaging flow cytometry
H Tang, R Deschner, P Allen, Y Cho, P Sermas, A Maurer, AD Ellington, ...
Journal of the American Chemical Society 134 (37), 15245-15248, 2012
182012
CMOS compatible MIM decoupling capacitor with reliable sub-nm EOT high-k stacks for the 7 nm node and beyond
T Ando, E Cartier, P Jamison, A Pyzyna, S Kim, J Bruley, K Chung, ...
2016 IEEE International Electron Devices Meeting (IEDM), 9.4. 1-9.4. 4, 2016
172016
Self-Allancd Gate Contact (SAGC) for CMOS technology scaling beyond 7nm
R Xie, C Park, R Conti, R Robison, H Zhou, I Saraf, A Carr, SSC Fan, ...
2019 Symposium on VLSI Technology, T148-T149, 2019
82019
Alignment through topography on intermediate component for memory device patterning
H Tang, M Rizzolo, OK Injo, TE Standaert
US Patent 10,658,589, 2020
72020
Vertical field effect transistors with self aligned gate and source/drain contacts
C Chi, H Tang, R Xie
US Patent 10,461,174, 2019
62019
Methods of forming a gate contact structure for a transistor
R Xie, H Tang, C Chi, D Chanemougame, LW Liebmann, MV Raymond
US Patent 10,490,641, 2019
52019
Efficient metal-insulator-metal capacitor
K Chung, IC Estrada-Raygoza, H Jagannathan, C Liu, YAM Mignot, ...
US Patent 10,090,378, 2018
52018
Directed self-assembly patterning strategies for phase change memory applications
RL Bruce, G Fraczak, JM Papalia, HY Tsai, M BrightSky, H Miyazoe, ...
Advanced Etch Technology for Nanopatterning VI 10149, 25-34, 2017
52017
Progress report on the generation of polyfunctional microscale particles for programmed self-assembly
R Deschner, H Tang, P Allen, C Hall, R Hlis, A Ellington, CG Willson
Chemistry of Materials 26 (3), 1457-1462, 2014
52014
Lithographic photomask alignment using non-planar alignment structures formed on wafer
CC Yang, H Tang, D Metzler, CB Peethala
US Patent 10,534,276, 2020
42020
Methods of forming a gate contact structure above an active region of a transistor
R Xie, H Tang, C Chi, D Chanemougame, LW Liebmann, MV Raymond
US Patent 10,483,363, 2019
42019
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Artikler 1–20