| A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors T Ghani, M Armstrong, C Auth, M Bost, P Charvat, G Glass, T Hoffmann, ... IEEE International Electron Devices Meeting 2003, 11.6. 1-11.6. 3, 2003 | 1081 | 2003 |
| Moore's law: the future of Si microelectronics SE Thompson, S Parthasarathy Materials today 9 (6), 20-25, 2006 | 1053 | 2006 |
| A 90-nm logic technology featuring strained-silicon SE Thompson, M Armstrong, C Auth, M Alavi, M Buehler, R Chau, S Cea, ... IEEE Transactions on electron devices 51 (11), 1790-1797, 2004 | 951 | 2004 |
| Uniaxial-process-induced strained-Si: Extending the CMOS roadmap SE Thompson, G Sun, YS Choi, T Nishida IEEE Transactions on electron Devices 53 (5), 1010-1020, 2006 | 750 | 2006 |
| A logic nanotechnology featuring strained-silicon SE Thompson, M Armstrong, C Auth, S Cea, R Chau, G Glass, T Hoffman, ... IEEE Electron Device Letters 25 (4), 191-193, 2004 | 699 | 2004 |
| Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors Y Sun, SE Thompson, T Nishida Journal of Applied Physics 101 (10), 2007 | 664 | 2007 |
| MOS scaling: Transistor challenges for the 21st century S Thompson Intel Technology Journal 398, 1-19, 1998 | 616 | 1998 |
| Strain: A solution for higher carrier mobility in nanoscale MOSFETs M Chu, Y Sun, U Aghoram, SE Thompson Annual Review of Materials Research 39 (1), 203-229, 2009 | 465 | 2009 |
| A 90 nm logic technology featuring 50 nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1/spl mu/m/sup 2/SRAM cell S Thompson, N Anand, M Armstrong, C Auth, B Arcot, M Alavi, P Bai, ... Digest. International Electron Devices Meeting,, 61-64, 2002 | 458 | 2002 |
| Strain effect in semiconductors: theory and device applications Y Sun, SE Thompson, T Nishida Springer Science & Business Media, 2009 | 413 | 2009 |
| Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy JD Cressler, S Monfray, G Freeman, D Friedman, DJ Paul, S Tsujino, ... CRC press, 2018 | 303 | 2018 |
| Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs S Thompson, G Sun, K Wu, J Lim, T Nishida IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004 | 275 | 2004 |
| Scaling challenges and device design requirements for high performance sub-50 nm gate length planar CMOS transistors T Ghani, K Mistry, P Packan, S Thompson, M Stettler, S Tyagi, M Bohr 2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No …, 2000 | 272 | 2000 |
| In search of" forever," continued transistor scaling one new material at a time SE Thompson, RS Chau, T Ghani, K Mistry, S Tyagi, MT Bohr IEEE Transactions on semiconductor manufacturing 18 (1), 26-36, 2005 | 267 | 2005 |
| Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs JS Lim, SE Thompson, JG Fossum IEEE Electron Device Letters 25 (11), 731-733, 2004 | 249 | 2004 |
| Electronic devices and systems, and methods for making and using the same SE Thompson, DR Thummalapally US Patent 8,273,617, 2012 | 241 | 2012 |
| Delaying forever: Uniaxial strained silicon transistors in a 90nm CMOS technology K Mistry, M Armstrong, C Auth, S Cea, T Coan, T Ghani, T Hoffmann, ... Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 50-51, 2004 | 214 | 2004 |
| CMOS fabrication process utilizing special transistor orientation M Armstrong, G Schrom, S Tyagi, PA Packan, KJ Kuhn, S Thompson US Patent 7,312,485, 2007 | 198 | 2007 |
| A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects S Tyagi, M Alavi, R Bigwood, T Bramblett, J Brandenburg, W Chen, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 183 | 2000 |
| Hole mobility in silicon inversion layers: Stress and surface orientation G Sun, Y Sun, T Nishida, SE Thompson Journal of Applied Physics 102 (8), 2007 | 135 | 2007 |
