| Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance A Okada, S Kanai, M Yamanouchi, S Ikeda, F Matsukura, H Ohno Applied Physics Letters 105 (5), 2014 | 135 | 2014 |
| Spin-orbit torques in high-resistivity-W/CoFeB/MgO Y Takeuchi, C Zhang, A Okada, H Sato, S Fukami, H Ohno Applied Physics Letters 112 (19), 2018 | 105 | 2018 |
| Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy A Okada, S He, B Gu, S Kanai, A Soumyanarayanan, ST Lim, M Tran, ... Proceedings of the National Academy of Sciences 114 (15), 3815-3820, 2017 | 65 | 2017 |
| Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB T Dohi, S Kanai, A Okada, F Matsukura, H Ohno AIP Advances 6 (7), 2016 | 36 | 2016 |
| Spin-pumping-free determination of spin-orbit torque efficiency from spin-torque ferromagnetic resonance A Okada, Y Takeuchi, K Furuya, C Zhang, H Sato, S Fukami, H Ohno Physical Review Applied 12 (1), 014040, 2019 | 33 | 2019 |
| Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance A Okada, S Kanai, S Fukami, H Sato, H Ohno Applied Physics Letters 112 (17), 2018 | 15 | 2018 |
| Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis N Ichikawa, T Dohi, A Okada, H Sato, S Fukami, H Ohno Applied Physics Letters 112 (20), 2018 | 7 | 2018 |
| Highly reliable STT-MRAM adopting advanced MTJs with controlled domain wall pinning JH Park, JH Kim, JM Kim, J Kim, D Apalkov, A Okada, H Sato, JH Jeong, ... 2022 International Electron Devices Meeting (IEDM), 10.6. 1-10.6. 4, 2022 | 5 | 2022 |
| Performance Improvement of Magnet Temperature Estimation using Kernel Method based Non-Linear Parameter Estimator for Variable leakage flux IPMSMs A Okada, AS Koshikawa, K Yonaga, K Sasaki, T Kato, M Ohzeki IEEJ Journal of Industry Applications 10 (6), 618-623, 2021 | 3 | 2021 |
| 14nm FinFET node embedded MRAM technology for automotive non-volatile RAM applications with endurance over 1E12-cycles J Oh, J Park, K Suh, K Lee, S Hwang, M Bak, H Kim, B Kwon, DK Lee, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 1 | 2024 |
Hideo OhnoTohoku UniversityZweryfikowany adres z riec.tohoku.ac.jp
