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Peng Kang
Tytuł
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Cytowane przez
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Moiré impurities in twisted bilayer black phosphorus: Effects on the carrier mobility
P Kang, WT Zhang, V Michaud-Rioux, XH Kong, C Hu, GH Yu, H Guo
Physical Review B 96 (19), 195406, 2017
802017
Machine-learning assisted screening of energetic materials
P Kang, Z Liu, H Abou-Rachid, H Guo
The Journal of Physical Chemistry A 124 (26), 5341-5351, 2020
572020
Material informatics for layered high-TC superconductors
ZL Liu, P Kang, Y Zhu, L Liu, H Guo
APL Materials 8 (6), 2020
462020
Tunable type-I/type-II transition in g-C3N4/graphyne heterostructure by BN-doping: A promising photocatalyst
J Yun, Y Zhang, Y Ren, P Kang, J Yan, W Zhao, Z Zhang, H Guo
Solar Energy Materials and Solar Cells 210, 110516, 2020
352020
Enhanced Optical Absorption and Interfacial Carrier Separation of CsPbBr3/Graphene Heterostructure: Experimental and Theoretical Insights
J Yun, H Fan, Y Zhang, R Huang, Y Ren, M Guo, H An, P Kang, H Guo
ACS applied materials & interfaces 12 (2), 3086-3095, 2019
262019
Calculated carrier mobility of h-BN/γ-InSe/h-BN van der Waals heterostructures
P Kang, V Michaud-Rioux, XH Kong, GH Yu, H Guo
2D Materials 4 (4), 045014, 2017
262017
Self-Powered Near-Infrared photodetector based on Graphyne/Hexagonal boron phosphide heterostructure with high responsivity and Robustness: A theoretical study
Y Zhang, J Yun, S Zhang, L Zeng, Z Bi, N Huang, P Kang, J Yan, W Zhao, ...
Applied Surface Science 569, 151035, 2021
182021
Twistronics in tensile strained bilayer black phosphorus
P Kang, W Zhang, V Michaud-Rioux, X Wang, J Yun, H Guo
Nanoscale 12 (24), 12909-12916, 2020
162020
The influence of ultrathin Cu interlayer in NiFe/IrMn interface on rotation of the magnetic moments
ZD Zhao, MH Li, P Kang, CJ Zhao, JY Zhang, LJ Zhou, YC Zhao, SL Jiang, ...
Applied Surface Science 332, 710-715, 2015
152015
Indirect-to-direct bandgap transition in bilayer InSe: Roles of twistronics
P Kang
2D Materials 7 (2), 021002, 2020
132020
Nitrogen tuned charge redistribution and orbital reconfiguration in Fe/MgO interface for significant interfacial magnetism tunability
S Wang, M Yao, Z Li, C Feng, L Wang, X Tang, P Kang, B Zhang, W Mi, ...
Advanced Functional Materials 29 (4), 1806677, 2019
112019
A type-II NGyne/GaSe heterostructure with high carrier mobility and tunable electronic properties for photovoltaic application
L Zeng, S Zhang, L Yao, Z Bi, Y Zhang, P Kang, J Yan, Z Zhang, J Yun
Nanotechnology 34 (6), 065702, 2022
102022
Interesting Odd–Even Effect, Ohmic Contact, Negative Differential Resistance, and Current Stabilizer Behavior in All-Carbon Graphyne/Carbon-Chain Junctions
J Yun, H An, R Huang, M Guo, Y Zhang, P Kang
IEEE Transactions on Electron Devices 67 (6), 2529-2535, 2020
92020
Electronic properties, interface contact and transport properties of strain-modulated MS2/borophosphene and MSeS/borophosphene (M= Cr, Mo, W) heterostructure: Insights from …
L Yao, J Yun, P Kang, H Zhao, J Yan, W Zhao, Z Zhang
Applied Surface Science 652, 159363, 2024
72024
Revealing the Origin of Anisotropic Rashba Spin‐Orbital Splitting and Four‐Phonon Scattering in Strontium‐Tin‐Selenium Thermoelectrics
S Bai, D Liu, H Shi, Y Qin, B Qin, T Hong, T Gao, Y Qiu, Y Liu, Z Li, P Kang, ...
Advanced Functional Materials, 2414288, 2024
52024
Two-dimensional van der Waals ferroelectrics: A pathway to next-generation devices in memory and neuromorphic computing
H Zhao, J Yun, Z Li, Y Liu, L Zheng, P Kang
Materials Science and Engineering: R: Reports 161, 100873, 2024
22024
Twist angle and electric gating controllable electronic structure of the two-dimensional stacked BP homo-structure
L Yao, J Yun, P Kang, H Zhao, S Zhang, L Zeng, Z Bi, J Yan, W Zhao, ...
Physical Chemistry Chemical Physics 26 (1), 230-240, 2024
22024
Self-powered, flexible near-infrared photodetector with high responsivity and strain robustness via stacking-engineered interfacial polarization of a BAs homobilayer
H Zhao, J Yun, L Yao, L Zhang, Y Li, J Yan, P Kang, W Zhao, Z Zhang
Physical Review Applied 22 (6), 064075, 2024
12024
Interfacial electronic properties and tunable band offset in graphyne/MoSe 2 heterostructure with high carrier mobility
S Zhang, J Yun, L Zeng, L Yao, Z Bi, C Mai, P Kang, J Yan, Z Zhang
New Journal of Chemistry 47 (15), 7084-7092, 2023
12023
Sliding ferroelectricity-induced triple barrier modulation in van der Waals boron arsenide tunnel junctions
H Zhao, J Yun, L Yao, L Zhang, J Liu, J Yan, L Zheng, P Kang, W Zhao, ...
Applied Physics Letters 126 (1), 2025
2025
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