Gwan-Hyoung Lee

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	Wszystkie	Od 2020
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James C. HoneDepartment of Mechanical Engineering, Columbia UniversityZweryfikowany adres z columbia.edu
Chul-Ho LeeAssociate Professor, Seoul National University & Korea University (2014~2022)Zweryfikowany adres z snu.ac.kr
Philip KimHarvard UniversityZweryfikowany adres z g.harvard.edu
Kenji WatanabeNational Institute for Materials ScienceZweryfikowany adres z nims.go.jp
Arend M. van der ZandeProfessor of Materials Science and Engineering, University of Illinois at Urbana-ChampaignZweryfikowany adres z illinois.edu
Young-Jun YuAssociate Professor, Department of Physics, Chungnam National UniversityZweryfikowany adres z cnu.ac.kr
Jong Hun KimInha UniversityZweryfikowany adres z inha.ac.kr
Pinshane Y. HuangAssociate Professor of Materials Science, University of IllinoisZweryfikowany adres z illinois.edu
Junyoung KwonSamsung Advanced Institute of TechnologyZweryfikowany adres z samsung.com
Tony F HeinzDepts. of Applied Physics, Photon Science, and, by courtesy, of Electrical Eng., SLAC, StanfordZweryfikowany adres z stanford.edu
Changgu LeeSungkyunkwan UniversityZweryfikowany adres z skku.edu
T.TaniguchiNational Institute for Materials ScienceZweryfikowany adres z nims.go.jp
Young Duck KimAssociate Professor, Department of Physics, Kyung Hee University, Seoul 02447, Republic of KoreaZweryfikowany adres z khu.ac.kr
Colin NuckollsSheldon and Dorothea Buckler Professor of Material Science, Columbia UniversityZweryfikowany adres z columbia.edu
Sunwoo LeeAssistant Professor, Nanyang Technological UniversityZweryfikowany adres z ntu.edu.sg
Annie Xian ZhangMechanical Engineering, Stevens Institute of TechnologyZweryfikowany adres z stevens.edu
David A MullerProfessor of Applied and Engineering Physics, Cornell UniversityZweryfikowany adres z cornell.edu
Andrea CapassoTenured Staff Researcher, International Iberian Nanotechnology Laboratory - [email protected]Zweryfikowany adres z inl.int
Tony LowU of Minnesota, IBM Research, Columbia U, Purdue U, National U SingaporeZweryfikowany adres z us.ibm.com
Namwon KimAssociate Professor, Texas State UniversityZweryfikowany adres z txstate.edu

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Gwan-Hyoung Lee

Professor, Materials Science and Engineering, Seoul National University

Zweryfikowany adres z snu.ac.kr - Strona główna

two-dimensional materials


Tytuł Sortuj wg cytatów Sortuj wg roku Sortuj wg tytułu	Cytowane przez Cytowane przez	Rok
Tightly bound trions in monolayer MoS2 KF Mak, K He, C Lee, GH Lee, J Hone, TF Heinz, J Shan Nature materials 12 (3), 207-211, 2012	3239	2012
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide AM van der Zande, PY Huang, DA Chenet, TC Berkelbach, YM You, ... Nature materials 12, 554–561, 2013	2446	2013
Atomically thin pn junctions with van der Waals heterointerfaces CH Lee, GH Lee, AM van der Zande, W Chen, Y Li, M Han, X Cui, G Arefe, ... Nature Nanotechnology 9, 676-681, 2014	2403	2014
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform X Cui, GH Lee, YD Kim, G Arefe, PY Huang, CH Lee, DA Chenet, X Zhang, ... Nature Nanotechnology, 2015	1450	2015
Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ... ACS nano 7 (9), 7931-7936, 2013	1291	2013
High-Strength Chemical-Vapor–Deposited Graphene and Grain Boundaries GH Lee, RC Cooper, SJ An, S Lee, A van der Zande, N Petrone, ... Science 340 (6136), 1073-1076, 2013	1028	2013
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices MS Choi, GH Lee, YJ Yu, DY Lee, SH Lee, P Kim, J Hone, WJ Yoo Nature communications 4, 1624, 2013	804	2013
Effect of defects on the intrinsic strength and stiffness of graphene A Zandiatashbar, GH Lee, SJ An, S Lee, N Mathew, M Terrones, ... Nature communications 5, 3186, 2014	765	2014
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride GH Lee, YJ Yu, C Lee, C Dean, KL Shepard, P Kim, J Hone Applied Physics Letters 99 (24), 243114, 2011	601	2011
Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage GH Lee, X Cui, YD Kim, G Arefe, X Zhang, CH Lee, F Ye, K Watanabe, ... ACS nano 9 (7), 7019-7026, 2015	477	2015
Measurement of Lateral and Interfacial Thermal Conductivity of Single-and Bilayer MoS2 and MoSe2 Using Refined Optothermal Raman Technique X Zhang, D Sun, Y Li, GH Lee, X Cui, D Chenet, Y You, TF Heinz, ... ACS Applied Materials & Interfaces 7 (46), 25923-25929, 2015	395	2015
Graphene mechanical oscillators with tunable frequency C Chen, S Lee, VV Deshpande, GH Lee, M Lekas, K Shepard, J Hone Nature nanotechnology 8 (12), 923-927, 2013	345	2013
Graphene based heterostructures C Dean, AF Young, L Wang, I Meric, GH Lee, K Watanabe, T Taniguchi, ... Solid State Communications 152 (15), 1275-1282, 2012	305	2012
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge S Kang, D Lee, J Kim, A Capasso, HS Kang, JW Park, CH Lee, GH Lee 2D Materials 7 (2), 022003, 2020	260	2020
Effect of surface morphology on friction of graphene on various substrates DH Cho, L Wang, JS Kim, GH Lee, ES Kim, S Lee, SY Lee, J Hone, C Lee Nanoscale 5 (7), 3063-3069, 2013	195	2013
Mechanical properties of two-dimensional materials and their applications JH Kim, JH Jeong, N Kim, R Joshi, GH Lee Journal of Physics D: Applied Physics 52 (8), 083001, 2018	182	2018
Tunable Electrical and Optical Characteristics in Monolayer Graphene and Few-Layer MoS₂ Heterostructure Devices S Rathi, I Lee, D Lim, J Wang, Y Ochiai, N Aoki, K Watanabe, T Taniguchi, ... Nano letters 15 (8), 5017-5024, 2015	181	2015
Two-Dimensional Semiconductor Optoelectronics Based on van der Waals Heterostructures JY Lee, JH Shin, GH Lee, CH Lee Nanomaterials 6 (11), 193, 2016	168	2016
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors J Kwon, JY Lee, YJ Yu, CH Lee, X Cui, J Hone, GH Lee Nanoscale 9 (18), 6151-6157, 2017	167	2017
Inking elastomeric stamps with micro‐patterned, single layer graphene to create high‐performance OFETs SJ Kang, B Kim, KS Kim, Y Zhao, Z Chen, GH Lee, J Hone, P Kim, ... Advanced Materials 23 (31), 3531, 2011	146	2011

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