| IGBT power module design for suppressing gate voltage spike at digital gate control Z Lou, T Mamee, K Hata, M Takamiya, SI Nishizawa, W Saito IEEE Access 11, 6632-6640, 2023 | 9 | 2023 |
| Investigations on acceptable breakdown voltage variation of parallel-connected SiC MOSFETs applied to olid-state circuit breakers Z Lou, K Wada, W Saito, S Nishizawa Microelectronics Reliability 126, 114270, 2021 | 8 | 2021 |
| Unclamped inductive switching robustness of SiC devices with parallel-connected varistor W Saito, Z Lou, SI NIshizawa IEEE Transactions on Electron Devices 69 (10), 5671-5677, 2022 | 5 | 2022 |
| The design considerations of stray inductance for power modules with parallel-connected IGBT chips for a digital gate driver control Z Lou, T Mamee, K Hata, M Takamiya, S Nishizawa, W Saito Power Electronic Devices and Components 6, 100047, 2023 | 3 | 2023 |
| Enhancement of turn-off gate voltage waveform change by digital gate control for bond wire lift-off detection in IGBT module T Mamee, Z Lou, K Hata, M Takamiya, S Nishizawa, W Saito Microelectronics Reliability 147, 115067, 2023 | 3 | 2023 |
| Investigation of acceptable breakdown voltage variation for parallel-connected SiC MOSFETs during unclamped inductive switching test Z Lou, W Saito, S Nishizawa Japanese Journal of Applied Physics 60 (SB), SBBD18, 2021 | 3 | 2021 |
| Estimating of IGBT bond wire lift-off trend using Convolutional Neural Network (CNN) T Mamee, Z Lou, K Hata, M Takamiya, T Sakurai, S Nishizawa, W Saito IEEE Access, 2024 | 2 | 2024 |
| Bond wire lift-off detection by gate voltage waveform in IGBT turn-off process enhanced by digital gate control T Mamee, Z Lou, K Hata, M Takamiya, S Nishizawa, W Saito Power Electronic Devices and Components 6, 100052, 2023 | 2 | 2023 |
| Cutoff Current Capability of SiC-MOSFETs with Parallel Connected Varistor under UIS Condition W Saito, Z Lou, S Nishizawa 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe …, 2022 | 2 | 2022 |
| Application of N parallel-connected SiC MOSFETs to solid-state circuit breakers based on UIS tests Z Lou, W Saito, S Nishizawa Microelectronics Reliability 138, 114737, 2022 | 1 | 2022 |
| Mechanism of gate voltage spike under digital gate control at IGBT switching operations Z Lou, T Mamee, K Hata, M Takamiya, S Nishizawa, W Saito Power Electronic Devices and Components 7, 100054, 2024 | | 2024 |
| The Effect of Parallel-Connected Varistor on UIS Robustness of SiC MOSFETs for Solid-State Circuit Breakers Application Z Lou, Y Zhu, S Nishizawa, W Saito CIPS 2022; 12th International Conference on Integrated Power Electronics …, 2022 | | 2022 |
Thatree Mameeมหาวิทยาลัยเทคโนโลยีพระจอมเกล้าธนบุรีZweryfikowany adres z kmutt.ac.th