| Exceptionally Uniform and Scalable Multilayer MoS2 Phototransistor Array Based on Large-Scale MoS2 Grown by RF Sputtering, Electron Beam Irradiation, and … H Park, N Liu, BH Kim, SH Kwon, S Baek, S Kim, HK Lee, YJ Yoon, S Kim ACS Applied Materials & Interfaces 12 (18), 20645-20652, 2020 | 69 | 2020 |
| Direct WS2 photodetector fabrication on a flexible substrate BH Kim, H Yoon, SH Kwon, DW Kim, YJ Yoon Vacuum 184, 109950, 2021 | 39 | 2021 |
| Negative photoconductivity of WS2 nanosheets decorated with Au nanoparticles via electron-beam irradiation BH Kim, SH Kwon, HH Gu, YJ Yoon Physica E: Low-dimensional Systems and Nanostructures 106, 45-49, 2019 | 35 | 2019 |
| Ultra-low-current driven InGaN blue micro light-emitting diodes for electrically efficient and self-heating relaxed microdisplay WJ Baek, J Park, J Shim, BH Kim, S Park, HS Kim, DM Geum, SH Kim Nature Communications 14 (1), 1386, 2023 | 31 | 2023 |
| Atomic rearrangement of a sputtered MoS 2 film from amorphous to a 2D layered structure by electron beam irradiation BH Kim, HH Gu, YJ Yoon Scientific reports 7 (1), 3874, 2017 | 29 | 2017 |
| Comprehensive Understanding of the HZO-based n/pFeFET Operation and Device Performance Enhancement Strategy SH Kuk, SM Han, BH Kim, SH Baek, JH Han, S Kim 2021 IEEE International Electron Devices Meeting (IEDM), 33.6. 1-33.6. 4, 2021 | 27 | 2021 |
| An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode SH Kuk, SM Han, BH Kim, SH Baek, JH Han, SH Kim IEEE Transactions on Electron Devices 69 (4), 2080-2087, 2022 | 24 | 2022 |
| Large-area and low-temperature synthesis of few-layered WS2 films for photodetectors BH Kim, HH Gu, YJ Yoon 2D Materials 5 (4), 045030, 2018 | 23 | 2018 |
| Dielectric-Engineered High-Speed, Low-Power, Highly Reliable Charge Trap Flash-Based Synaptic Device for Neuromorphic Computing beyond Inference JP Kim, SK Kim, S Park, S Kuk, T Kim, BH Kim, SH Ahn, YH Cho, ... Nano Letters 23 (2), 451-461, 2023 | 19 | 2023 |
| Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors J Shim, J Lim, DM Geum, BH Kim, SY Ahn, SH Kim Optics Express 29 (12), 18037-18058, 2021 | 18 | 2021 |
| Oxygen scavenging of HfZrO 2-based capacitors for improving ferroelectric properties BH Kim, S Kuk, SK Kim, JP Kim, DM Geum, SH Baek, SH Kim Nanoscale Advances 4 (19), 4114-4121, 2022 | 12 | 2022 |
| Oxygen Scavenging in HfZrOx‐Based n/p‐FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement BH Kim, SH Kuk, SK Kim, JP Kim, YJ Suh, J Jeong, DM Geum, SH Baek, ... Advanced Electronic Materials 9 (5), 2201257, 2023 | 9 | 2023 |
| Photoresponsive behavior of electron-beam irradiated MoS2 films HH Gu, BH Kim, YJ Yoon Applied Physics Letters 113 (18), 183103, 2018 | 9 | 2018 |
| IL Scavenging and Recovery Strategies to Improve the Performance and Reliability of HZO-Based FeFETs BH Kim, SK Kim, S Kuk, YJ Suh, J Jeong, JP Kim, DM Geum, S Kim 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 7 | 2023 |
| Logic and Memory Ferroelectric Field-Effect-Transistor Using Reversible and Irreversible Domain Wall Polarization SH Kuk, S Han, DH Lee, BH Kim, J Shim, MH Park, JH Han, SH Kim IEEE Electron Device Letters 44 (1), 36-39, 2022 | 7 | 2022 |
| Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND SH Kuk, JH Han, BH Kim, J Kim, SH Kim 2023 IEEE International Memory Workshop (IMW), 1-4, 2023 | 6 | 2023 |
| Heterogeneous 3D Sequential CFET with Ge (110) Nanosheet p-FET on Si (100) bulk n-FET by Direct Wafer Bonding SK Kim, HR Lim, J Jeong, SW Lee, JP Kim, J Jeong, BH Kim, SY Ahn, ... 2022 International Electron Devices Meeting (IEDM), 20.1. 1-20.1. 4, 2022 | 6 | 2022 |
| Polyimide photodevices without a substrate by electron-beam irradiation H Yoon, BH Kim, SH Kwon, DW Kim, YJ Yoon Applied Surface Science 570, 151185, 2021 | 6 | 2021 |
| Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K J Jeong, J Kim, J Lee, YJ Suh, N Rheem, SK Kim, J Park, BH Kim, JP Kim, ... IEEE Transactions on Electron Devices, 2024 | 5 | 2024 |
| A sub-micron-thick InGaAs broadband (400-1700 nm) photodetectors with a high external quantum efficiency (> 70%) DM Geum, J Lim, J Jang, S Ahn, SK Kim, J Shim, BH Kim, J Park, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 5 | 2022 |