| Charge-based modeling of junctionless double-gate field-effect transistors JM Sallese, N Chevillon, C Lallement, B Iniguez, F Prégaldiny IEEE Transactions on Electron Devices 58 (8), 2628-2637, 2011 | 275 | 2011 |
| CNTFET modeling and reconfigurable logic-circuit design I O'Connor, J Liu, F Gaffiot, F Prégaldiny, C Lallement, C Maneux, ... IEEE Transactions on Circuits and Systems I: Regular Papers 54 (11), 2365-2379, 2007 | 222 | 2007 |
| A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism JM Sallese, F Krummenacher, F Prégaldiny, C Lallement, A Roy, C Enz Solid-State Electronics 49 (3), 485-489, 2005 | 218 | 2005 |
| A simple efficient model of parasitic capacitances of deep-submicron LDD MOSFETs F Prégaldiny, C Lallement, D Mathiot Solid-State Electronics 46 (12), 2191-2198, 2002 | 78 | 2002 |
| Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects B Diagne, F Prégaldiny, C Lallement, JM Sallese, F Krummenacher Solid-State Electronics 52 (1), 99-106, 2008 | 73 | 2008 |
| Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model F Prégaldiny, C Lallement, D Mathiot Solid-State Electronics 48 (5), 781-787, 2004 | 70 | 2004 |
| Design-oriented compact models for CNTFETs F Pregaldiny, C Lallement, JB Kammerer International Conference on Design and Test of Integrated Systems in …, 2006 | 64 | 2006 |
| Generalization of the concept of equivalent thickness and capacitance to multigate MOSFETs modeling N Chevillon, JM Sallese, C Lallement, F Prégaldiny, M Madec, J Sedlmeir, ... IEEE Transactions on Electron Devices 59 (1), 60-71, 2011 | 53 | 2011 |
| An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs F Prégaldiny, C Lallement, R van Langevelde, D Mathiot Solid-State Electronics 48 (3), 427-435, 2004 | 53 | 2004 |
| Physics-based compact model for ultra-scaled FinFETs A Yesayan, F Prégaldiny, N Chevillon, C Lallement, JM Sallese Solid-State Electronics 62 (1), 165-173, 2011 | 52 | 2011 |
| Compact modeling and applications of CNTFETs for analog and digital circuit design F Pregaldiny, JB Kammerer, C Lallement 2006 13th IEEE International Conference on Electronics, Circuits and Systems …, 2006 | 38 | 2006 |
| Explicit compact model for ultranarrow body FinFETs M Tang, F Prégaldiny, C Lallement, JM Sallese IEEE transactions on electron devices 56 (7), 1543-1547, 2009 | 34 | 2009 |
| The equivalent-thickness concept for doped symmetric DG MOSFETs JM Sallese, N Chevillon, F Pregaldiny, C Lallement, B Iniguez IEEE transactions on electron devices 57 (11), 2917-2924, 2010 | 32 | 2010 |
| Explicit modelling of the double‐gate MOSFET with VHDL‐AMS F Prégaldiny, F Krummenacher, B Diagne, F Pêcheux, JM Sallese, ... INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: electronic networks, devices …, 2006 | 30 | 2006 |
| Compact modeling of magnetic tunnel junction M Madec, JB Kammerer, F Pregaldiny, L Hebrard, C Lallement 2008 Joint 6th International IEEE Northeast Workshop on Circuits and Systems …, 2008 | 27 | 2008 |
| An explicit quasi-static charge-based compact model for symmetric DG MOSFET F Prégaldiny, F Krummenacher, JM Sallese, B Diagne, C Lallement Proc. NSTI-Nanotech, 686-691, 2006 | 21 | 2006 |
| Explicit drain current model of junctionless double-gate field-effect transistors A Yesayan, F Prégaldiny, JM Sallese Solid-state electronics 89, 134-138, 2013 | 18 | 2013 |
| FinFET compact modeling and parameter extraction N Chevillon, M Tang, F Prégaldiny, C Lallement, M Madec 2009 MIXDES-16th International Conference Mixed Design of Integrated …, 2009 | 17 | 2009 |
| Compact modeling of emerging technologies with VHDL-AMS F Prégaldiny, C Lallement, B Diagne, JM Sallese, F Krummenacher Advances in Design and Specification Languages for Embedded Systems …, 2007 | 16 | 2007 |
| Etude et modélisation du comportement électrique des transistors MOS fortement submicroniques F Prégaldiny Université Louis Pasteur-Strasbourg I, 2003 | 11 | 2003 |
