| Mechanism of forming a trench structure CH Tsai, SH Syue, Z Fang US Patent 9,396,986, 2016 | 472 | 2016 |
| FinFET structure and method for manufacturing thereof CH Tsai, NI Chun-Lung, KW Chen US Patent 9,515,072, 2016 | 460 | 2016 |
| FinFETs and methods of forming FinFETs CH Tsai, TC Wang US Patent 9,558,946, 2017 | 452 | 2017 |
| Methods for doping fin field-effect transistors CH Tsai, YL Huang, YU De-Wei US Patent 9,209,280, 2015 | 256 | 2015 |
| Defect reduction for formation of epitaxial layer in source and drain regions CH Tsai, CC Su, TM Kwok US Patent 9,076,734, 2015 | 226 | 2015 |
| Techniques for FinFET doping CH Tsai, C Chien-Tai, MR Yeh, DW Lin US Patent 8,785,286, 2014 | 82 | 2014 |
| Methods for doping fin field-effect transistors CH Tsai, YL Huang, YU De-Wei US Patent 8,980,719, 2015 | 76 | 2015 |
| FinFET LDD and source drain implant technique CH Tsai, CC Su, TH Li, DW Lin, WS Huang US Patent 8,557,692, 2013 | 74 | 2013 |
| Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devices CH Tsai, TC Wang, LIU Su-Hao US Patent 9,029,226, 2015 | 72 | 2015 |
| Method for forming epitaxial feature YH Cheng, TM Kwok, CH Tsai, JJ Xu US Patent 9,142,643, 2015 | 71 | 2015 |
| Mechanism for FinFET well doping CH Tsai, YT Lin, CH Wann US Patent 9,406,546, 2016 | 70 | 2016 |
| Self-aligned dual-metal silicide and germanide formation CH Wann, SP Sun, LY Yeh, C Shih, LC Yu, CH Tsai, CH Lin, NK Chen, ... US Patent 9,214,556, 2015 | 60 | 2015 |
| Formation of dislocations in source and drain regions of FinFET devices CH Tsai, WY Lu, C Chien-Tai, WY Lee, DW Lin US Patent 9,293,534, 2016 | 59 | 2016 |
| Semiconductor structure and manufacturing method thereof CH Tsai, KF Yu, KW Chen US Patent 9,978,866, 2018 | 54 | 2018 |
| Methods of anneal after deposition of gate layers CH Tsai, XF Yu, YL Huang, DW Lin US Patent 8,809,175, 2014 | 54 | 2014 |
| Contact resistance reduction technique CH Tsai, MT Chen US Patent 9,543,438, 2017 | 50 | 2017 |
| Epitaxial formation of source and drain regions CH Tsai, YF Pai US Patent 9,012,310, 2015 | 48 | 2015 |
| High surface dopant concentration semiconductor device and method of fabricating YL Huang, MR Yeh, CH Tsai, TH Lee, DW Lin, TM Kwok US Patent 8,278,196, 2012 | 46 | 2012 |
| Asymmetric cyclic desposition etch epitaxy CH Tsai, YF Pai, CC Su, T Tseng, MY Liu US Patent 8,906,789, 2014 | 45 | 2014 |
| Epitaxial growth of doped film for source and drain regions CH Tsai, JA Ke, TY Chen, CK Wang US Patent 8,877,592, 2014 | 45 | 2014 |
