Carbon dioxide gas sensor using a graphene sheet HJ Yoon, JH Yang, Z Zhou, SS Yang, MMC Cheng
Sensors and Actuators B: Chemical 157 (1), 310-313, 2011
852 2011 High Mobility WSe2 p- and n- Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts HJ Chuang, X Tan, NJ Ghimire, MM Perera, B Chamlagain, MMC Cheng, ...
Nano letters 14 (6), 3594-3601, 2014
542 2014 Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe2 , MoS2 , and MoSe2 Transistors HJ Chuang, B Chamlagain, M Koehler, MM Perera, J Yan, D Mandrus, ...
Nano letters 16 (3), 1896-1902, 2016
470 2016 Improved Carrier Mobility in Few-Layer MoS2 Field-Effect Transistors with Ionic-Liquid Gating MM Perera, MW Lin, HJ Chuang, BP Chamlagain, C Wang, X Tan, ...
ACS nano 7 (5), 4449-4458, 2013
410 2013 Polarized photocurrent response in black phosphorus field-effect transistors T Hong, B Chamlagain, W Lin, HJ Chuang, M Pan, Z Zhou, YQ Xu
Nanoscale 6 (15), 8978-8983, 2014
379 2014 Mobility Improvement and Temperature Dependence in MoSe2 Field-Effect Transistors on Parylene-C Substrate B Chamlagain, Q Li, NJ Ghimire, HJ Chuang, MM Perera, H Tu, Y Xu, ...
ACS nano 8 (5), 5079-5088, 2014
236 2014 Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with polymer electrolyte MW Lin, L Liu, Q Lan, X Tan, KS Dhindsa, P Zeng, VM Naik, MMC Cheng, ...
Journal of Physics D: Applied Physics 45 (34), 345102, 2012
191 2012 Anisotropic photocurrent response at black phosphorus–MoS 2 p–n heterojunctions T Hong, B Chamlagain, T Wang, HJ Chuang, Z Zhou, YQ Xu
Nanoscale 7 (44), 18537-18541, 2015
158 2015 High-Performance WSe2 Phototransistors with 2D/2D Ohmic Contacts T Wang, K Andrews, A Bowman, T Hong, M Koehler, J Yan, D Mandrus, ...
Nano letters 18 (5), 2766-2771, 2018
138 2018 Plasmonic Hot Electron Induced Photocurrent Response at MoS2 –Metal Junctions T Hong, B Chamlagain, S Hu, SM Weiss, Z Zhou, YQ Xu
Acs Nano 9 (5), 5357-5363, 2015
120 2015 Room-temperature high on/off ratio in suspended graphene nanoribbon field-effect transistors MW Lin, C Ling, Y Zhang, HJ Yoon, MMC Cheng, LA Agapito, N Kioussis, ...
Nanotechnology 22 (26), 265201, 2011
118 2011 Ferromagnetism and magnetoresistance of Co–ZnO inhomogeneous magnetic semiconductors S Yan, C Ren, X Wang, Y Xin, ZX Zhou, LM Mei, MJ Ren, YX Chen, ...
Appl. Phys. Lett. 84, 2376, 2004
118 2004 The effect of annealing on the electrical and thermal transport properties of macroscopic bundles of long multi-wall carbon nanotubes R Jin, ZX Zhou, D Mandrus, IN Ivanov, G Eres, JY Howe, AA Puretzky, ...
Physica B: Condensed Matter 388 (1-2), 326-330, 2007
92 2007 Improved Contacts and Device Performance in MoS2 Transistors Using a 2D Semiconductor Interlayer K Andrews, A Bowman, U Rijal, PY Chen, Z Zhou
ACS nano 14 (5), 6232-6241, 2020
85 2020 Thermally Oxidized 2D TaS2 as a High-κ Gate Dielectric for MoS2 Field-Effect Transistors PYCZZ Bhim Chamlagain, Qingsong Cui, Sagar Paudel, Mark Cheng
2D Materials, 2017
83 2017 Colossal Magnetoresistance by Avoiding a Ferromagnetic State in the Mott System XN Lin, ZX Zhou, V Durairaj, P Schlottmann, G Cao
Physical review letters 95 (1), 017203, 2005
71 2005 Vertically Stacked and Self-Encapsulated van der Waals Heterojunction Diodes Using Two-Dimensional Layered Semiconductors CW Jinshui Miao, Zhihao Xu, Qing Li, Arthur Bowman, Suoming Zhang, Weida Hu ...
ACS Nano, 2017
68 2017 Edge effects on the pH response of graphene nanoribbon field effect transistors X Tan, HJ Chuang, MW Lin, Z Zhou, MMC Cheng
The Journal of Physical Chemistry C 117 (51), 27155-27160, 2013
65 2013 Enhanced electrochemical performance of graphene modified LiFePO4 cathode material for lithium ion batteries KS Dhindsa, BP Mandal, K Bazzi, MW Lin, M Nazri, GA Nazri, VM Naik, ...
Solid State Ionics 253, 94-100, 2013
60 2013 Approaching the intrinsic band gap in suspended high-mobility graphene nanoribbons MW Lin, C Ling, LA Agapito, N Kioussis, Y Zhang, MMC Cheng, WL Wang, ...
Physical Review B—Condensed Matter and Materials Physics 84 (12), 125411, 2011
60 2011 
Mark Ming-Cheng ChengElectrical and Computer Engineering, the University of AlabamaZweryfikowany adres z eng.ua.edu
