An all-digital associated particle imaging system for the 3D determination of isotopic distributions M Ayllon Unzueta, B Ludewigt, B Mak, T Tak, A Persaud
Review of Scientific Instruments 92 (6), 2021
15 2021 Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy T Tak, CW Johnson, WY Ho, F Wu, M Sauty, S Rebollo, AK Schmid, ...
Physical Review Applied 20 (6), 064045, 2023
10 2023 Origins of the high-energy electroluminescence peaks in long-wavelength (∼ 495–685 nm) InGaN light-emitting diodes YC Chow, T Tak, F Wu, J Ewing, S Nakamura, SP DenBaars, YR Wu, ...
Applied Physics Letters 123 (9), 2023
10 2023 Recovering the efficiency of AlGaInP red micro-LEDs using sidewall treatments MS Wong, RC White, S Gee, T Tak, S Gandrothula, H Choi, S Nakamura, ...
Applied Physics Express 16 (6), 066503, 2023
9 2023 Atomic layer etching (ALE) of III-nitrides WY Ho, YC Chow, Z Biegler, KS Qwah, T Tak, A Wissel-Garcia, I Liu, F Wu, ...
Applied Physics Letters 123 (6), 2023
6 2023 Dynamics of carrier injection through V-defects in long wavelength GaN LEDs S Marcinkevičius, T Tak, YC Chow, F Wu, R Yapparov, SP DenBaars, ...
Applied Physics Letters 124 (18), 2024
5 2024 Steady-state junction current distribution in pn GaN diodes measured using low-energy electron microscopy (LEEM) WY Ho, CW Johnson, T Tak, M Sauty, YC Chow, S Nakamura, A Schmid, ...
Applied Physics Letters 123 (3), 2023
4 2023 Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects R Yapparov, T Tak, J Ewing, F Wu, S Nakamura, SP DenBaars, JS Speck, ...
Applied Physics Letters 125 (3), 2024
3 2024 Pure edge-dislocation half-loops in low-temperature Ga N for V-defect formation JJ Ewing, F Wu, A Quevedo, T Tak, S Nakamura, SP DenBaars, JS Speck
Physical Review Applied 21 (6), 064042, 2024
3 2024 Optical analysis of III-nitride micro-light-emitting diodes with different sidewall treatments at low current density operation MS Wong, S Gee, T Tak, S Gandrothula, S Rebollo, NG Cha, JS Speck, ...
Japanese Journal of Applied Physics 63 (4), 040903, 2024
3 2024 Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro-and photoluminescence R Yapparov, T Tak, J Ewing, S Nakamura, SP DenBaars, JS Speck, ...
Journal of Applied Physics 136 (8), 2024
2 2024 Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes A Quevedo, F Wu, TY Tsai, JJ Ewing, T Tak, S Gandrothula, S Gee, X Li, ...
Applied Physics Letters 125 (4), 2024
2 2024 III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition MS Wong, ES Trageser, H Zhang, HM Chang, S Gee, T Tak, ...
Optics Express 32 (12), 20483-20490, 2024
2 2024 Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs T Tak, A Quevedo, F Wu, S Gandrothula, JJ Ewing, S Gee, S Nakamura, ...
Applied Physics Letters 124 (17), 2024
1 2024 Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes MS Wong, T Tak, AY Ni, K Nitta, S Gandrothula, JK Kim, NG Cha, ...
Applied Physics Letters 126 (4), 2025
2025 InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75% HM Chang, S Gandrothula, S Gee, T Tak, MS Wong, N Palmquist, ...
Japanese Journal of Applied Physics, 2025
2025 Volumetric carrier injection in InGaN quantum well light emitting diodes S Marcinkevičius, R Yapparov, T Tak, J Ewing, F Wu, SP DenBaars, ...
Lithuanian Journal of Physics 64 (4), 2024
2024 Carrier injection via V-defects for efficient green and red GaN LEDs S Marcinkevičius, R Yapparov, T Tak, J Ewing, F Wu, SP DenBaars, ...
Advanced Materials, Biomaterials, and Manufacturing Technologies for …, 2024
2024 Investigation of the cesium activation of M Sauty, CW Johnson, T Tak, WY Ho, YC Chow, JS Speck, AK Schmid, ...
Physical Review Applied 22 (3), 034005, 2024
2024 Nanoscale mapping of inhomogeneities in the luminescence of operational nitride LEDs C Fornos, N Alyabyeva, M Sauty, WY Ho, YC Chow, T Tak, JS Speck, ...
Gallium Nitride Materials and Devices XIX, PC1288608, 2024
2024