Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions R Chepulskyy, X Tang, D Apalkov, AV Khvalkovskiy, V Nikitin, MT Krounbi
US Patent 9,130,155, 2015
138 2015 Magnetic element having perpendicular anisotropy with enhanced efficiency R Chepulskyy, D Apalkov
US Patent 9,082,534, 2015
45 2015 Thermally nucleated magnetic reversal in CoFeB/MgO nanodots A Meo, P Chureemart, S Wang, R Chepulskyy, D Apalkov, RW Chantrell, ...
Scientific reports 7 (1), 16729, 2017
36 2017 Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy D Apalkov, CM Park, R Chepulskyy, AV Khvalkovskiy, X Tang
US Patent 8,786,039, 2014
31 2014 Spin transfer torque switching dynamics in CoFeB/MgO magnetic tunnel junctions A Meo, S Sampan-A-Pai, PB Visscher, R Chepulskyy, D Apalkov, ...
Physical Review B 103 (5), 054426, 2021
25 2021 Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer MJ Carey, K Chan, R Chepulskyy
US Patent 9,236,564, 2016
22 2016 Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots A Meo, R Chepulskyy, D Apalkov, RW Chantrell, RFL Evans
Journal of Applied Physics 128 (7), 2020
17 2020 Method and system for providing magnetic junctions using bcc cobalt and suitable for use in spin transfer torque memories R Chepulskyy, D Apalkov, X Tang, K Chan, MT Krounbi
US Patent App. 14/048,164, 2015
16 2015 Temperature and Thickness Dependence of Statistical Fluctuations of the Gilbert Damping in - - / Bilayers S Sampan-A-Pai, J Chureemart, RW Chantrell, R Chepulskyy, S Wang, ...
Physical Review Applied 11 (4), 044001, 2019
15 2019 Method and system for providing magnetic junctions including Heusler multilayers WH Butler, K Munira, R Chepulskyy, D Apalkov
US Patent 9,634,241, 2017
14 2017 Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriers D Apalkov, R Chepulskyy
US Patent 9,384,811, 2016
11 2016 Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications R Chepulskyy, D Apalkov
US Patent 9,287,322, 2016
8 2016 Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications R Chepulskyy, D Apalkov
US Patent 10,205,092, 2019
5 2019 Spin-torque oscillator based on easy-cone anisotropy D Apalkov, R Chepulskyy, V Nikitin
US Patent 9,966,901, 2018
4 2018 Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories R Chepulskyy, D Apalkov, AV Khvalkovskiy
US Patent 9,478,730, 2016
4 2016 Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent (s) R Chepulskyy, D Apalkov
US Patent 10,121,960, 2018
3 2018 Method and system for removing boron from magnetic junctions usable in spin transfer torque memory applications R Beach, R Chepulskyy, DW Erickson, V Nikitin
US Patent 9,735,350, 2017
3 2017 B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM D Apalkov, X Tang, D Erickson, V Nikitin, R Chepulskyy
US Patent 9,825,220, 2017
2 2017 Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque D Apalkov, X Tang, HS Jung, R Chepulskyy
US Patent 10,121,961, 2018
1 2018 Perpendicular STT-MRAM: origins of anisotropy, scalability and challenges D Apalkov, R Chepulskyy, A Khvalkovskiy, V Nikitin, S Watts, P Visscher, ...
Int. French-US Workshop ‘Toward Low Power Spintronic Devices’, 2013
1 2013