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Roman Chepulskyy
Roman Chepulskyy
Inne imiona/nazwiskaRoman Chepulskii
Samsung Semiconductor R&D
Zweryfikowany adres z samsung.com
Tytuł
Cytowane przez
Cytowane przez
Rok
Magnetic junctions having insertion layers and magnetic memories using the magnetic junctions
R Chepulskyy, X Tang, D Apalkov, AV Khvalkovskiy, V Nikitin, MT Krounbi
US Patent 9,130,155, 2015
1382015
Magnetic element having perpendicular anisotropy with enhanced efficiency
R Chepulskyy, D Apalkov
US Patent 9,082,534, 2015
452015
Thermally nucleated magnetic reversal in CoFeB/MgO nanodots
A Meo, P Chureemart, S Wang, R Chepulskyy, D Apalkov, RW Chantrell, ...
Scientific reports 7 (1), 16729, 2017
362017
Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
D Apalkov, CM Park, R Chepulskyy, AV Khvalkovskiy, X Tang
US Patent 8,786,039, 2014
312014
Spin transfer torque switching dynamics in CoFeB/MgO magnetic tunnel junctions
A Meo, S Sampan-A-Pai, PB Visscher, R Chepulskyy, D Apalkov, ...
Physical Review B 103 (5), 054426, 2021
252021
Method and system for providing an engineered magnetic layer including Heusler layers and an amorphous insertion layer
MJ Carey, K Chan, R Chepulskyy
US Patent 9,236,564, 2016
222016
Atomistic investigation of the temperature and size dependence of the energy barrier of CoFeB/MgO nanodots
A Meo, R Chepulskyy, D Apalkov, RW Chantrell, RFL Evans
Journal of Applied Physics 128 (7), 2020
172020
Method and system for providing magnetic junctions using bcc cobalt and suitable for use in spin transfer torque memories
R Chepulskyy, D Apalkov, X Tang, K Chan, MT Krounbi
US Patent App. 14/048,164, 2015
162015
Temperature and Thickness Dependence of Statistical Fluctuations of the Gilbert Damping in --/ Bilayers
S Sampan-A-Pai, J Chureemart, RW Chantrell, R Chepulskyy, S Wang, ...
Physical Review Applied 11 (4), 044001, 2019
152019
Method and system for providing magnetic junctions including Heusler multilayers
WH Butler, K Munira, R Chepulskyy, D Apalkov
US Patent 9,634,241, 2017
142017
Method and system for providing a thermally assisted spin transfer torque magnetic device including smart thermal barriers
D Apalkov, R Chepulskyy
US Patent 9,384,811, 2016
112016
Method for controlling magnetic properties through ion diffusion in a magnetic junction usable in spin transfer torque magnetic random access memory applications
R Chepulskyy, D Apalkov
US Patent 9,287,322, 2016
82016
Method and system for providing a diluted free layer magnetic junction usable in spin transfer or spin-orbit torque applications
R Chepulskyy, D Apalkov
US Patent 10,205,092, 2019
52019
Spin-torque oscillator based on easy-cone anisotropy
D Apalkov, R Chepulskyy, V Nikitin
US Patent 9,966,901, 2018
42018
Method and system for providing magnetic layers having insertion layers for use in spin transfer torque memories
R Chepulskyy, D Apalkov, AV Khvalkovskiy
US Patent 9,478,730, 2016
42016
Method and system for providing magnetic junctions usable in spin transfer torque applications utilizing interstitial glass-forming agent (s)
R Chepulskyy, D Apalkov
US Patent 10,121,960, 2018
32018
Method and system for removing boron from magnetic junctions usable in spin transfer torque memory applications
R Beach, R Chepulskyy, DW Erickson, V Nikitin
US Patent 9,735,350, 2017
32017
B2-MTJ design with texture blocking decoupling layer for sub-25 nm STT-MRAM
D Apalkov, X Tang, D Erickson, V Nikitin, R Chepulskyy
US Patent 9,825,220, 2017
22017
Magnetic devices including magnetic junctions having tilted easy axes and enhanced damping programmable using spin orbit torque
D Apalkov, X Tang, HS Jung, R Chepulskyy
US Patent 10,121,961, 2018
12018
Perpendicular STT-MRAM: origins of anisotropy, scalability and challenges
D Apalkov, R Chepulskyy, A Khvalkovskiy, V Nikitin, S Watts, P Visscher, ...
Int. French-US Workshop ‘Toward Low Power Spintronic Devices’, 2013
12013
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