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Gento Yamahata
Gento Yamahata
NTT Basic Research Laboratories, NTT Corporation
Zweryfikowany adres z ntt.com - Strona główna
Tytuł
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Cytowane przez
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Gigahertz single-electron pumping in silicon with an accuracy better than 9.2 parts in 10^{7}
G Yamahata, SP Giblin, M Kataoka, T Karasawa, A Fujiwara
Applied Physics Letters 109 (1), 2016
862016
Gigahertz single-trap electron pumps in silicon
G Yamahata, K Nishiguchi, A Fujiwara
Nature communications 5 (1), 5038, 2014
852014
Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots
G Yamahata, T Kodera, HOH Churchill, K Uchida, CM Marcus, S Oda
Physical Review B—Condensed Matter and Materials Physics 86 (11), 115322, 2012
792012
Evidence for universality of tunable-barrier electron pumps
SP Giblin, A Fujiwara, G Yamahata, MH Bae, N Kim, A Rossi, M Möttönen, ...
Metrologia 56 (4), 044004, 2019
572019
Accuracy evaluation of single-electron shuttle transfer in Si nanowire metal-oxide-semiconductor field-effect transistors
G Yamahata, K Nishiguchi, A Fujiwara
Applied Physics Letters 98 (22), 2011
482011
High-accuracy current generation in the nanoampere regime from a silicon single-trap electron pump
G Yamahata, SP Giblin, M Kataoka, T Karasawa, A Fujiwara
Scientific Reports 7 (1), 45137, 2017
462017
Accuracy evaluation and mechanism crossover of single-electron transfer in Si tunable-barrier turnstiles
G Yamahata, K Nishiguchi, A Fujiwara
Physical Review B 89 (16), 165302, 2014
412014
Picosecond coherent electron motion in a silicon single-electron source
G Yamahata, S Ryu, N Johnson, HS Sim, A Fujiwara, M Kataoka
Nature nanotechnology 14 (11), 1019-1023, 2019
372019
Realisation of a quantum current standard at liquid helium temperature with sub-ppm reproducibility
SP Giblin, E Mykkänen, A Kemppinen, P Immonen, A Manninen, M Jenei, ...
Metrologia 57 (2), 025013, 2020
322020
Control of inter-dot electrostatic coupling by a side gate in a silicon double quantum dot operating at 4.5 K
G Yamahata, T Kodera, H Mizuta, K Uchida, S Oda
Applied physics express 2 (9), 095002, 2009
302009
Thermal-noise suppression in nano-scale Si field-effect transistors by feedback control based on single-electron detection
K Chida, K Nishiguchi, G Yamahata, H Tanaka, A Fujiwara
Applied Physics Letters 107 (7), 2015
292015
High-density assembly of nanocrystalline silicon quantum dots
A Tanaka, G Yamahata, Y Tsuchiya, K Usami, H Mizuta, S Oda
Current Applied Physics 6 (3), 344-347, 2006
252006
Gigahertz single-hole transfer in Si tunable-barrier pumps
G Yamahata, T Karasawa, A Fujiwara
Applied Physics Letters 106 (2), 2015
242015
Control of electrostatic coupling observed for silicon double quantum dot structures
G Yamahata, Y Tsuchiya, S Oda, ZAK Durrani, H Mizuta
Japanese journal of applied physics 47 (6R), 4820, 2008
212008
Electron transport through silicon serial triple quantum dots
G Yamahata, Y Tsuchiya, H Mizuta, K Uchida, S Oda
Solid-State Electronics 53 (7), 779-785, 2009
202009
Precision measurement of an electron pump at 2 GHz; the frontier of small DC current metrology
SP Giblin, G Yamahata, A Fujiwara, M Kataoka
Metrologia 60 (5), 055001, 2023
142023
Understanding the mechanism of tunable-barrier single-electron pumping: Mechanism crossover and optimal accuracy
G Yamahata, N Johnson, A Fujiwara
Physical Review B 103 (24), 245306, 2021
122021
Measurement of the curvature and height of the potential barrier for a dynamic quantum dot
N Johnson, G Yamahata, A Fujiwara
Applied Physics Letters 115 (16), 2019
82019
Coupled quantum dots on SOI as highly integrated Si qubits
S Oda, G Yamahata, K Horibe, T Kodera
2016 IEEE International Electron Devices Meeting (IEDM), 13.3. 1-13.3. 4, 2016
82016
Position-controllable Ge nanowires growth on patterned Au catalyst substrate
C Li, K Usami, G Yamahata, Y Tsuchiya, H Mizuta, S Oda
Applied Physics Express 2 (1), 015004, 2009
82009
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