Towards chirality control of graphene nanoribbons embedded in hexagonal boron nitride HS Wang, L Chen, K Elibol, L He, H Wang, C Chen, C Jiang, C Li, T Wu, ... Nature Materials 20 (2), 202-207, 2021 | 114 | 2021 |
Bandgap engineering of two-dimensional C3N bilayers W Wei, S Yang, G Wang, T Zhang, W Pan, Z Cai, Y Yang, L Zheng, P He, ... Nature Electronics 4 (7), 486-494, 2021 | 51 | 2021 |
Universal epitaxy of non-centrosymmetric two-dimensional single-crystal metal dichalcogenides P Zheng, W Wei, Z Liang, B Qin, J Tian, J Wang, R Qiao, Y Ren, J Chen, ... Nature Communications 14 (1), 1-7, 2023 | 43 | 2023 |
Wafer-scale growth of single-crystal graphene on vicinal Ge (001) substrate P Li, W Wei, M Zhang, Y Mei, PK Chu, X Xie, Q Yuan, Z Di Nano Today 34, 100908, 2020 | 42 | 2020 |
Interfacial epitaxy of multilayer rhombohedral transition-metal dichalcogenide single crystals B Qin, C Ma, Q Guo, X Li, W Wei, C Ma, Q Wang, F Liu, M Zhao, G Xue, ... Science 385 (6704), 99-104, 2024 | 29 | 2024 |
Bevel-edge epitaxy of ferroelectric rhombohedral boron nitride single crystal L Wang, J Qi, W Wei, M Wu, Z Zhang, X Li, H Sun, Q Guo, M Cao, Q Wang, ... Nature 629 (8010), 74-79, 2024 | 27 | 2024 |
WS2 ribbon arrays with defined chirality and coherent polarity G Xue, Z Zhou, Q Guo, Y Zuo, W Wei, J Yang, P Yin, S Zhang, D Zhong, ... Science 384 (6700), 1100-1104, 2024 | 9 | 2024 |
Visualizing the Anomalous Catalysis in Two-Dimensional Confined Space ZJ Wang, Z Liang, X Kong, X Zhang, R Qiao, J Wang, S Zhang, Z Zhang, ... Nano Letters 22 (12), 4661-4668, 2022 | 8 | 2022 |
Stamped production of single-crystal hexagonal boron nitride monolayers on various insulating substrates F Zeng, R Wang, W Wei, Z Feng, Q Guo, Y Ren, G Cui, D Zou, Z Zhang, ... Nature Communications 14 (1), 6421, 2023 | 6 | 2023 |
Remote epitaxy of single-crystal rhombohedral WS2 bilayers C Chang, X Zhang, W Li, Q Guo, Z Feng, C Huang, Y Ren, Y Cai, X Zhou, ... Nature Communications 15 (1), 4130, 2024 | 5 | 2024 |
Stacking driven Raman spectra change of carbon based 2D semiconductor C3N Y Yang, W Wei, P He, S Yang, Q Yuan, G Ding, Z Liu, X Xie Chinese Chemical Letters 33 (5), 2600-2604, 2022 | 4 | 2022 |