Improved refractive index formulas for the GM Laws, EC Larkins, I Harrison, C Molloy, D Somerford
Journal of applied Physics 89 (2), 1108-1115, 2001
226 2001 Control of differential gain, nonlinear gain and damping factor for high-speed application of GaAs-based MQW lasers JD Ralston, S Weisser, I Esquivias, EC Larkins, J Rosenzweig, PJ Tasker, ...
IEEE Journal of quantum electronics 29 (6), 1648-1659, 1993
219 1993 Damping-limited modulation bandwidths up to 40 GHz in undoped short-cavity In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers S Weisser, EC Larkins, K Czotscher, W Benz, J Daleiden, I Esquivias, ...
IEEE Photonics Technology Letters 8 (5), 608-610, 1996
126 1996 Nonlinear properties of tapered laser cavities S Sujecki, L Borruel, J Wykes, P Moreno, B Sumpf, P Sewell, H Wenzel, ...
IEEE Journal of selected topics in quantum electronics 9 (3), 823-834, 2003
88 2003 Design and simulation of next-generation high-power, high-brightness laser diodes JJ Lim, S Sujecki, L Lang, Z Zhang, D Paboeuf, G Pauliat, G Lucas-Leclin, ...
IEEE Journal of Selected Topics in Quantum Electronics 15 (3), 993-1008, 2009
79 2009 Process parameter dependence of impurity-free interdiffusion in GaAs/Alx Ga1−x As and Inx Ga1−y As/GaAs multiple quantum wells S Bürkner, M Maier, EC Larkins, W Rothemund, EP O’reilly, JD Ralston
Journal of Electronic materials 24, 805-812, 1995
78 1995 Quasi-3-D simulation of high-brightness tapered lasers L Borruel, S Sujecki, P Moreno, J Wykes, M Krakowski, B Sumpf, P Sewell, ...
IEEE journal of quantum electronics 40 (5), 463-472, 2004
76 2004 Bistable optical laser based on a heterostructure PNPN thyristor EC Larkins
US Patent 5,349,599, 1994
73 1994 Narrow-line coherently combined tapered laser diodes in a Talbot external cavity with a volume Bragg grating D Paboeuf, G Lucas-Leclin, P Georges, N Michel, M Krakowski, J Lim, ...
Applied Physics Letters 93 (21), 2008
60 2008 Low-bias-current direct modulation up to 33 GHz in InGaAs/GaAs/AlGaAs pseudomorphic MQW ridge-waveguide lasers JD Ralston, S Weisser, K Eisele, RE Sah, EC Larkins, J Rosenzweig, ...
IEEE photonics technology letters 6 (9), 1076-1079, 1994
58 1994 Space‐charge effects in photovoltaic double barrier quantum well infrared detectors H Schneider, EC Larkins, JD Ralston, K Schwarz, F Fuchs, P Koidl
Applied physics letters 63 (6), 782-784, 1993
55 1993 Efficient high-speed direct modulation in p-doped In0. 35 Ga0. 65As/GaAs multiquantum well lasers S Weisser, JD Ralston, EC Larkins, I Esquivias, PJ Tasker, J Fleissner, ...
Electronics Letters 28 (23), 2141-2143, 1992
52 1992 Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars R Xia, EC Larkins, I Harrison, SRA Dods, A Andrianov, J Morgan, ...
IEEE Photonics technology letters 14 (7), 893-895, 2002
48 2002 InGaAs/GaAs multiple-quantum-well modulators and switches A Stöhr, O Humbach, S Zumkley, G Wingen, G David, D Jäger, B Bollig, ...
Optical and Quantum Electronics 25, S865-S883, 1993
48 1993 Design of wide-emitter single-mode laser diodes JJ Lim, TM Benson, EC Larkins
IEEE journal of quantum electronics 41 (4), 506-516, 2005
42 2005 Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes AV Andrianov, SRA Dods, J Morgan, JW Orton, TM Benson, I Harrison, ...
Journal of Applied Physics 87 (7), 3227-3233, 2000
40 2000 Influences of MBE growth processes on photovoltaic 3-5/spl mu/m intersubband photodetectors EC Larkins, H Schneider, S Ehret, J Fleissner, B Dischler, P Koidl, ...
IEEE transactions on electron devices 41 (4), 511-518, 1994
39 1994 Reduction of the acceptor impurity background in GaAs grown by molecular beam epitaxy EC Larkins, ES Hellman, DG Schlom, JS Harris Jr, MH Kim, GE Stillman
Applied physics letters 49 (7), 391-393, 1986
31 1986 Design strategies to increase the brightness of gain guided tapered lasers L Borruel, H Odriozola, JMG Tijero, I Esquivias, S Sujecki, EC Larkins
Optical and quantum electronics 40, 175-189, 2008
29 2008 Influence of interdiffusion processes on optical and structural properties of pseudomorphic In0. 35Ga0. 65As/GaAs multiple quantum well structures S Bürkner, M Baeumler, J Wagner, EC Larkins, W Rothemund, JD Ralston
Journal of applied physics 79 (9), 6818-6825, 1996
29 1996 