Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication M Khoury, H Li, P Li, YC Chow, B Bonef, H Zhang, MS Wong, S Pinna, ...
Nano Energy 67, 104236, 2020
65 2020 Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template H Li, MS Wong, M Khoury, B Bonef, H Zhang, YC Chow, P Li, J Kearns, ...
Optics Express 27 (17), 24154-24160, 2019
55 2019 Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors YC Chow, C Lee, MS Wong, YR Wu, S Nakamura, SP DenBaars, ...
Optics Express 28 (16), 23796-23805, 2020
24 2020 Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates C Lynsky, RC White, YC Chow, WY Ho, S Nakamura, SP DenBaars, ...
Journal of Crystal Growth 560, 126048, 2021
23 2021 Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate H Li, P Li, H Zhang, YC Chow, MS Wong, S Pinna, J Klamkin, JS Speck, ...
Optics express 28 (9), 13569-13575, 2020
19 2020 Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells R Yapparov, YC Chow, C Lynsky, F Wu, S Nakamura, JS Speck, ...
Journal of Applied Physics 128 (22), 2020
18 2020 Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers YC Chow, C Lynsky, F Wu, S Nakamura, SP DenBaars, C Weisbuch, ...
Applied Physics Letters 119 (22), 2021
17 2021 Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs WY Ho, YC Chow, DJ Myers, F Wu, J Peretti, C Weisbuch, JS Speck
Applied Physics Letters 119 (5), 2021
16 2021 High internal quantum efficiency of long wavelength InGaN quantum wells S Marcinkevičius, R Yapparov, YC Chow, C Lynsky, S Nakamura, ...
Applied Physics Letters 119 (7), 2021
15 2021 Impact of doped barriers on the recombination coefficients of c-plane InGaN/GaN single quantum well light-emitting diodes YC Chow, C Lynsky, S Nakamura, SP DenBaars, C Weisbuch, JS Speck
Applied Physics Letters 121 (18), 2022
11 2022 Origins of the high-energy electroluminescence peaks in long-wavelength (∼ 495–685 nm) InGaN light-emitting diodes YC Chow, T Tak, F Wu, J Ewing, S Nakamura, SP DenBaars, YR Wu, ...
Applied Physics Letters 123 (9), 2023
10 2023 Localization effect in photoelectron transport induced by alloy disorder in nitride semiconductor compounds M Sauty, NMS Lopes, JP Banon, Y Lassailly, L Martinelli, A Alhassan, ...
Physical Review Letters 129 (21), 216602, 2022
9 2022 High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates JJ Ewing, C Lynsky, MS Wong, F Wu, YC Chow, P Shapturenka, M Iza, ...
Optics Express 31 (25), 41351-41360, 2023
8 2023 Demonstration of yellow (568 nm) stimulated emission from optically pumped InGaN/GaN multi-quantum wells P Li, H Zhang, H Li, T Cohen, R Anderson, MS Wong, E Trageser, ...
Applied Physics Letters 121 (7), 2022
8 2022 Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template H Li, H Zhang, P Li, MS Wong, YC Chow, S Pinna, J Klamkin, P Demierry, ...
Journal of Physics: Photonics 2 (3), 031003, 2020
8 2020 Atomic layer etching (ALE) of III-nitrides WY Ho, YC Chow, Z Biegler, KS Qwah, T Tak, A Wissel-Garcia, I Liu, F Wu, ...
Applied Physics Letters 123 (6), 2023
6 2023 Measurement of minority carrier diffusion length in p-GaN using electron emission spectroscopy (EES) WY Ho, YC Chow, S Nakamura, J Peretti, C Weisbuch, JS Speck
Applied Physics Letters 122 (21), 2023
6 2023 Dynamics of carrier injection through V-defects in long wavelength GaN LEDs S Marcinkevičius, T Tak, YC Chow, F Wu, R Yapparov, SP DenBaars, ...
Applied Physics Letters 124 (18), 2024
5 2024 Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers YC Chow, C Lynsky, S Nakamura, SP DenBaars, C Weisbuch, JS Speck
Journal of Applied Physics 133 (14), 2023
5 2023 Detection of hot electrons originating from an upper valley at WY Ho, AI Alhassan, C Lynsky, YC Chow, DJ Myers, SP DenBaars, ...
Physical Review B 107 (3), 035303, 2023
5 2023 