| Annealing effect of surface-activated bonded diamond/Si interface J Liang, Y Zhou, S Masuya, F Gucmann, M Singh, J Pomeroy, S Kim, ... Diamond and Related Materials 93, 187-192, 2019 | 42 | 2019 |
| Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density M Ťapajna, L Válik, F Gucmann, D Gregušová, K Fröhlich, Š Haščík, ... Journal of Vacuum Science & Technology B 35 (1), 2017 | 32 | 2017 |
| Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties M Ťapajna, R Stoklas, D Gregušová, F Gucmann, K Hušeková, Š Haščík, ... Applied Surface Science 426, 656-661, 2017 | 30 | 2017 |
| Scanning thermal microscopy for accurate nanoscale device thermography F Gucmann, JW Pomeroy, M Kuball Nano Today 39, 101206, 2021 | 27 | 2021 |
| Growth of α-and β-Ga2O3 epitaxial layers on sapphire substrates using liquid-injection MOCVD F Egyenes-Pörsök, F Gucmann, K Hušeková, E Dobročka, M Sobota, ... Semiconductor Science and Technology 35 (11), 115002, 2020 | 25 | 2020 |
| Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices F Hrubišák, K Hušeková, X Zheng, A Rosová, E Dobročka, M Ťapajna, ... Journal of Vacuum Science & Technology A 41 (4), 2023 | 16 | 2023 |
| Extraction and characterization of polysaccharide films prepared from Furcellaria lumbricalis and Gigartina skottsbergii seaweeds I Šimkovic, F Gucmann, R Mendichi, AG Schieroni, D Piovani, E Dobročka, ... Cellulose 28 (15), 9567-9588, 2021 | 15 | 2021 |
| Structure and Thermal Stability of ε/κ-Ga2O3 Films Deposited by Liquid-Injection MOCVD E Dobročka, F Gucmann, K Hušeková, P Nádaždy, F Hrubišák, F Egyenes, ... Materials 16 (1), 20, 2022 | 14 | 2022 |
| InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator F Gucmann, D Gregušová, R Stoklas, J Dérer, R Kúdela, K Fröhlich, ... Applied Physics Letters 105 (18), 2014 | 14 | 2014 |
| Evidence of relationship between strain and In-incorporation: Growth of N-polar In-rich InAlN buffer layer by OMCVD P Chauhan, S Hasenöhrl, E Dobročka, MP Chauvat, A Minj, F Gucmann, ... Journal of Applied Physics 125 (10), 2019 | 13 | 2019 |
| Thermal stability of rhombohedral α-and monoclinic β-Ga2O3 grown on sapphire by liquid-injection MOCVD F Gucmann, P Nádaždy, K Hušeková, E Dobročka, J Priesol, F Egyenes, ... Materials Science in Semiconductor Processing 156, 107289, 2023 | 12 | 2023 |
| Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment D Gregušová, F Gucmann, R Kúdela, M Mičušík, R Stoklas, L Valik, ... Applied Surface Science 395, 140-144, 2017 | 12 | 2017 |
| Phase‐dependent phonon heat transport in nanoscale gallium oxide thin films X Xiao, Y Mao, B Meng, G Ma, K Hušeková, F Egyenes, A Rosová, ... Small 20 (21), 2309961, 2024 | 9 | 2024 |
| Doping efficiency and electron transport in Al-doped ZnO films grown by atomic layer deposition A Mošková, M Moško, M Precner, M Mikolášek, A Rosová, M Mičušík, ... Journal of Applied Physics 130 (3), 2021 | 9 | 2021 |
| Growth and properties of N‐polar InN/InAlN heterostructures S Hasenöhrl, E Dobročka, R Stoklas, F Gucmann, A Rosová, J Kuzmík physica status solidi (a) 217 (19), 2000197, 2020 | 9 | 2020 |
| High efficiency aln/gan hemts for q-band applications with an improved thermal dissipation R Kabouche, R Pecheux, K Harrouche, E Okada, F Medjdoub, J Derluyn, ... International Journal of High Speed Electronics and Systems 28 (01n02), 1940003, 2019 | 9 | 2019 |
| Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure P Šichman, S Hasenöhrl, R Stoklas, J Priesol, E Dobročka, Š Haščík, ... Materials Science in Semiconductor Processing 118, 105203, 2020 | 8 | 2020 |
| Thermal analysis of semiconductor devices and materials-Why should I not trust a thermal simulation? M Kuball, JW Pomeroy, F Gucmann, B Oner 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and …, 2019 | 8 | 2019 |
| Scaling of the physical properties in Ba (Fe, Ni) _ {2} As_ {2} single crystals: Evidence for quantum fluctuations P. Rodière, T. Klein, L. Lemberger, K. Hasselbach, A. Demuer, J. Kačmarčik ... Phys. Rev. B 85 (21), 214506, 2012 | 8 | 2012 |
| Distribution of fixed oxide charge in MOS structures with ALD grown Al2O3studied by capacitance measurements L Valik, M Ťapajna, F Gucmann, J Fedor, P Šiffalovič, K Fröhlich The Ninth International Conference on Advanced Semiconductor Devices and …, 2012 | 7 | 2012 |
Milan TapajnaResearcher at Institute of Electrical Engineering SASZweryfikowany adres z savba.sk
