Martin L. Green

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	Wszystkie	Od 2020
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Leonard FeldmanProfessor of Physics and Materials ScienceZweryfikowany adres z rutgers.edu
Jason Hattrick-SimpersDepartment of Materials Science and Engineering University of TorontoZweryfikowany adres z utoronto.ca
E A FitzgeraldCornell, ATT, MIT, Massachusetts Institute of Technology, NTUZweryfikowany adres z mit.edu
Harry AtwaterCalifornia Institute of TechnologyZweryfikowany adres z caltech.edu
Thierry ConardIMECZweryfikowany adres z imec.be
Gregory TimpProfessor Electrical Engineering & Biological Studies, University of Notre DameZweryfikowany adres z nd.edu
Bruce van DoverProfessor of Materials Science, Cornell UniversityZweryfikowany adres z cornell.edu
Ya-Hong XieUniversity of California Los Angeles, Materials Sciences & EngineeringZweryfikowany adres z ucla.edu
David A MullerProfessor of Applied and Engineering Physics, Cornell UniversityZweryfikowany adres z cornell.edu
Winston TimpAssociate Professor, Johns Hopkins UniversityZweryfikowany adres z jhu.edu
Laura EspinalMaterials Scientist, NISTZweryfikowany adres z nist.gov
Fernanda Chiarello StedileProfessora Titular de Físico-Química, Universidade Federal do Rio Grande do SulZweryfikowany adres z ufrgs.br
R OpilaUniversity of DelawareZweryfikowany adres z udel.edu
Don MonroeFreelance science writerZweryfikowany adres z DonMonroe.info
Kenji Shiraishi名古屋大学　未来材料・システム研究所Zweryfikowany adres z imass.nagoya-u.ac.jp
Ralph NuzzoG.L. Clark Professor Emeritus, UIUCZweryfikowany adres z illinois.edu
Eduard A CartierIBM Research, T. J. Watson Research CenterZweryfikowany adres z us.ibm.com
Muhammad Ashraful AlamJai N. Gupta Distinguished Professor of Electrical Engineering, Purdue UniversityZweryfikowany adres z purdue.edu
Nabil BassimMcMaster UniversityZweryfikowany adres z mcmaster.ca
Steven CundiffPhysics Department, University of Michigan, Ann Arbor, MI 48109Zweryfikowany adres z umich.edu

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Martin L. Green

NIST

Zweryfikowany adres z nist.gov


Tytuł Sortuj wg cytatów Sortuj wg roku Sortuj wg tytułu	Cytowane przez Cytowane przez	Rok
Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits ML Green, EP Gusev, R Degraeve, EL Garfunkel Journal of Applied Physics 90 (5), 2057-2121, 2001	1026	2001
Totally relaxed Ge_xSi_1−x layers with low threading dislocation densities grown on Si substrates EA Fitzgerald, YH Xie, ML Green, D Brasen, AR Kortan, J Michel, YJ Mii, ... Applied physics letters 59 (7), 811-813, 1991	940	1991
Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process ML Green, GD Wilk US Patent 6,797,525, 2004	434	2004
Nucleation and growth of atomic layer deposited gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide or Si–O–N) underlayers ML Green, MY Ho, B Busch, GD Wilk, T Sorsch, T Conard, B Brijs, ... Journal of Applied Physics 92 (12), 7168-7174, 2002	381	2002
The 2019 materials by design roadmap K Alberi, MB Nardelli, A Zakutayev, L Mitas, S Curtarolo, A Jain, M Fornari, ... Journal of Physics D: Applied Physics 52 (1), 013001, 2018	352	2018
Chemical vapor deposition of ruthenium and ruthenium dioxide films ML Green, ME Gross, LE Papa, KJ Schnoes, D Brasen Journal of the Electrochemical Society 132 (11), 2677, 1985	325	1985
Fulfilling the promise of the materials genome initiative with high-throughput experimental methodologies ML Green, CL Choi, JR Hattrick-Simpers, AM Joshi, I Takeuchi, SC Barron, ... Applied Physics Reviews 4 (1), 2017	324	2017
Applications of high throughput (combinatorial) methodologies to electronic, magnetic, optical, and energy-related materials ML Green, I Takeuchi, JR Hattrick-Simpers Journal of Applied Physics 113 (23), 2013	301	2013
Growth and characterization of ultrathin nitrided silicon oxide films EP Gusev, HC Lu, EL Garfunkel, T Gustafsson, ML Green IBM journal of research and development 43 (3), 265-286, 1999	280	1999
Dielectric Films for Advanced Microelectronics M Baklanov, M Green, K Maex	278	2007
The vertical replacement-gate (VRG) MOSFET: A 50-nm vertical MOSFET with lithography-independent gate length JM Hergenrother, D Monroe, FP Klemens, A Komblit, GR Weber, ... International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999	261*	1999
Synthesis and characterization of aerosol silicon nanocrystal nonvolatile floating-gate memory devices ML Ostraat, JW De Blauwe, ML Green, LD Bell, ML Brongersma, ... Applied Physics Letters 79 (3), 433-435, 2001	259	2001
Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition MY Ho, H Gong, GD Wilk, BW Busch, ML Green, PM Voyles, DA Muller, ... Journal of Applied Physics 93 (3), 1477-1481, 2003	234	2003
Semiconductor heterostructure devices with strained semiconductor layers D Brasen, EA Fitzgerald Jr, ML Green, DP Monroe, PJ Silverman, YH Xie US Patent 5,442,205, 1995	228	1995
A model for the FCC→ HCP transformation, its applications, and experimental evidence S Mahajan, ML Green, D Brasen Metallurgical Transactions A 8 (2), 283-293, 1977	192	1977
Rapid thermal oxidation of silicon in N₂O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness ML Green, D Brasen, KW Evans‐Lutterodt, LC Feldman, K Krisch, ... Applied physics letters 65 (7), 848-850, 1994	190	1994
Field effect devices and capacitors with improved thin film dielectrics and method for making same D Brasen, EL Garfunkel, ML Green, EP Gusev US Patent 5,861,651, 1999	187	1999
Measurement, Standards, and Data Needs for CO₂ Capture Materials: A Critical Review L Espinal, DL Poster, W Wong-Ng, AJ Allen, ML Green Environmental science & technology 47 (21), 11960-11975, 2013	176	2013
Multi-component high-K gate dielectrics for the silicon industry L Manchanda, MD Morris, ML Green, RB Van Dover, F Klemens, ... Microelectronic Engineering 59 (1-4), 351-359, 2001	175	2001
Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy JP Chang, ML Green, VM Donnelly, RL Opila, J Eng Jr, J Sapjeta, ... Journal of Applied Physics 87 (9), 4449-4455, 2000	173	2000

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