Shui-Qing (Fisher) Yu

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	Wszystkie	Od 2020
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Wei DuAssociate Professor, Department of Electrical Engineering, University of ArkansasZweryfikowany adres z uark.edu
Joe Margetis, PhDApplied MaterialsZweryfikowany adres z amat.com
Richard A. SorefResearch Professor of Engineering, The University of Massachusetts at BostonZweryfikowany adres z rcn.com
Greg SunAPS and Optica Fellow, Professor of Engineering Department, UMass BostonZweryfikowany adres z umb.edu
Aboozar MoslehAssistant Professor of Nanoscience, University of Arkansas at Pine BluffZweryfikowany adres z uapb.edu
Hameed NaseemProfessor of Electrical Engineering, University of ArkansasZweryfikowany adres z uark.edu
Gregory SalamoProfessor of Physics, University of ArkansasZweryfikowany adres z uark.edu
Yong-Hang ZhangProf., School of Electrical, Computer and Energy EngineeringZweryfikowany adres z asu.edu
Wei DouUniversity of Arkansas, FayettevilleZweryfikowany adres z email.uark.edu
Jifeng LiuProfessor, Thayer School of Engineering, Dartmouth College; Fellow, OSA (now OPTICA)Zweryfikowany adres z dartmouth.edu
Shane R JohnsonArizona State UniversityZweryfikowany adres z asu.edu
Perry C. GrantArktonics LLC.Zweryfikowany adres z arktonics.com
Yuriy I. MazurInstitute for Nanoscience and Engineering, University of ArkansasZweryfikowany adres z uark.edu
Benjamin ConleyEngineer, US NavyZweryfikowany adres z navy.mil
Ding DingPrincipal Test EngineerZweryfikowany adres z asu.edu
Mourad BenamaraInstitute for Nanoscience & Engineering, University of ArkansasZweryfikowany adres z uark.edu
Andrian V. Kuchuk, А.В. Кучук, А. Кучу...Institute for Nanoscience & Engineering, University of Arkansas, Fayetteville, USAZweryfikowany adres z uark.edu
Dongsheng FanUniversity of ArkansasZweryfikowany adres z email.uark.edu
Murtadha AlherUniversity of KerbalaZweryfikowany adres z uokerbala.edu.iq
Vitaliy DoroganLecturer, New York City College of Technology (City Tech), CUNYZweryfikowany adres z citytech.cuny.edu

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Shui-Qing (Fisher) Yu

University of Arkansas

Zweryfikowany adres z uark.edu - Strona główna

Semiconductor Optoelectronics SiGeSn(Pb) Material and Devices Dissimilar Material Integration Low Dimensional Quantum Materia


Tytuł Sortuj wg cytatów Sortuj wg roku Sortuj wg tytułu	Cytowane przez Cytowane przez	Rok
An optically pumped 2.5 μm GeSn laser on Si operating at 110 K S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ... Applied Physics Letters 109 (17), 2016	253	2016
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ... Applied Physics Letters 105 (15), 2014	239	2014
Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis Applied physics letters 95 (13), 2009	235	2009
Si-based GeSn photodetectors toward mid-infrared imaging applications H Tran, T Pham, J Margetis, Y Zhou, W Dou, PC Grant, JM Grant, ... ACS Photonics 6 (11), 2807-2815, 2019	225	2019
Electrically injected GeSn lasers on Si operating up to 100 K SQY Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Huong Tran, Grey Abernathy ... Optica 7 (8), 924-928, 2020	217	2020
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou, T Pham, P Grant, S Ghetmiri, ... ACs Photonics 5 (3), 827-833, 2017	209	2017
Systematic study of Ge1− xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ... Journal of Applied Physics 119 (10), 2016	163	2016
Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ... Optics express 24 (5), 4519-4531, 2016	155	2016
Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth W Dou, M Benamara, A Mosleh, J Margetis, P Grant, Y Zhou, S Al-Kabi, ... Scientific reports 8 (1), 5640, 2018	153	2018
Monolithic infrared silicon photonics: The rise of (Si) GeSn semiconductors O Moutanabbir, S Assali, X Gong, E O'Reilly, CA Broderick, B Marzban, ... Applied Physics Letters 118 (11), 2021	150	2021
Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si Y Zhou, W Dou, W Du, S Ojo, H Tran, SA Ghetmiri, J Liu, G Sun, R Soref, ... Acs Photonics 6 (6), 1434-1441, 2019	144	2019
Group IV photonics: driving integrated optoelectronics R Soref, D Buca, SQ Yu optics and photonics news 27 (1), 32-39, 2016	129	2016
Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ... Applied Physics Letters 104 (24), 2014	107	2014
Competition of optical transitions between direct and indirect bandgaps in Ge1− xSnx W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ... Applied Physics Letters 105 (5), 2014	102	2014
Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ... Optics express 22 (13), 15639-15652, 2014	102	2014
Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ... ECS Transactions 64 (6), 711, 2014	101	2014
Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ... Journal of Applied Physics 120 (2), 2016	96	2016
Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ... Applied Physics Letters 105 (22), 2014	95	2014
Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator pn junction Z Zeng, TA Morgan, D Fan, C Li, Y Hirono, X Hu, Y Zhao, JS Lee, J Wang, ... AIP Advances 3 (7), 2013	92	2013
Optically pumped lasing at 3 μm from compositionally graded GeSn with tin up to 22.3% W Dou, Y Zhou, J Margetis, SA Ghetmiri, S Al-Kabi, W Du, J Liu, G Sun, ... Optics letters 43 (19), 4558-4561, 2018	90	2018

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