Obserwuj
Tao Guo
Tao Guo
Zweryfikowany adres z uwaterloo.ca
Tytuł
Cytowane przez
Cytowane przez
Rok
Synaptic devices based neuromorphic computing applications in artificial intelligence
B Sun, T Guo, G Zhou, S Ranjan, Y Jiao, L Wei, YN Zhou, YA Wu
Materials Today Physics 18, 100393, 2021
2262021
Biomemristors as the next generation bioelectronics
B Sun, G Zhou, T Guo, YN Zhou, YA Wu
Nano Energy 75, 104938, 2020
1352020
Cascade electrocatalysis via AgCu single-atom alloy and Ag nanoparticles in CO2 electroreduction toward multicarbon products
C Du, JP Mills, AG Yohannes, W Wei, L Wang, S Lu, JX Lian, M Wang, ...
Nature Communications 14 (1), 6142, 2023
822023
From memristive materials to neural networks
T Guo, B Sun, S Ranjan, Y Jiao, L Wei, YN Zhou, YA Wu
ACS Applied Materials & Interfaces 12 (49), 54243-54265, 2020
752020
Multistate resistive switching behaviors for neuromorphic computing in memristor
B Sun, S Ranjan, G Zhou, T Guo, Y Xia, L Wei, YN Zhou, YA Wu
Materials Today Advances 9, 100125, 2021
692021
Photoelectric memristor-based machine vision for artificial intelligence applications
C Yang, B Sun, G Zhou, T Guo, C Ke, Y Chen, J Shao, Y Zhao, H Wang
ACS Materials Letters 5 (2), 504-526, 2023
682023
Versatile memristor for memory and neuromorphic computing
T Guo, K Pan, Y Jiao, B Sun, C Du, JP Mills, Z Chen, X Zhao, L Wei, ...
Nanoscale Horizons 7 (3), 299-310, 2022
682022
Overwhelming coexistence of negative differential resistance effect and RRAM
T Guo, B Sun, Y Zhou, H Zhao, M Lei, Y Zhao
Physical Chemistry Chemical Physics 20 (31), 20635-20640, 2018
662018
A resistive switching memory device with a negative differential resistance at room temperature
MS Kadhim, F Yang, B Sun, Y Wang, T Guo, Y Jia, L Yuan, Y Yu, Y Zhao
Applied Physics Letters 113 (5), 2018
472018
In-Depth Physical Mechanism Analysis and Wearable Applications of HfOx-Based Flexible Memristors
S Zhu, B Sun, G Zhou, T Guo, C Ke, Y Chen, F Yang, Y Zhang, J Shao, ...
ACS Applied Materials & Interfaces 15 (4), 5420-5431, 2023
442023
Selectively Reducing Nitrate into NH3 in Neutral Media by PdCu Single-Atom Alloy Electrocatalysis
C Du, S Lu, J Wang, X Wang, M Wang, HM Fruehwald, L Wang, B Zhang, ...
ACS Catalysis 13 (16), 10560-10569, 2023
392023
A battery-like self-selecting biomemristor from earth-abundant natural biomaterials
B Sun, T Guo, G Zhou, J Wu, Y Chen, YN Zhou, YA Wu
ACS Applied Bio Materials 4 (2), 1976-1985, 2021
382021
Evolution between CRS and NRS behaviors in MnO2@ TiO2 nanocomposite based memristor for multi-factors-regulated memory applications
S Mao, B Sun, C Ke, J Qin, Y Yang, T Guo, YA Wu, J Shao, Y Zhao
Nano Energy 107, 108117, 2023
342023
2D-material-based volatile and nonvolatile memristive devices for neuromorphic computing
X Xia, W Huang, P Hang, T Guo, Y Yan, J Yang, D Yang, X Yu, X Li
ACS Materials Letters 5 (4), 1109-1135, 2023
302023
Applications of biomemristors in next generation wearable electronics
S Mao, B Sun, G Zhou, T Guo, J Wang, Y Zhao
Nanoscale Horizons 7 (8), 822-848, 2022
302022
A flexible corn starch‐based biomaterial device integrated with capacitive‐coupled memristive memory, mechanical stress sensing, synapse, and logic operation functions
B Sun, Y Chen, G Zhou, Y Zhou, T Guo, S Zhu, S Mao, Y Zhao, J Shao, ...
Advanced Electronic Materials 9 (3), 2201017, 2023
292023
In-plane ferroelectricity in few-layered GeS and its van der Waals ferroelectric diodes
Y Yan, Q Deng, S Li, T Guo, X Li, Y Jiang, X Song, W Huang, J Yang, ...
Nanoscale 13 (38), 16122-16130, 2021
292021
Soft biomaterials based flexible artificial synapse for neuromorphic computing
T Guo, J Ge, B Sun, K Pan, Z Pan, L Wei, Y Yan, YN Zhou, YA Wu
Advanced Electronic Materials 8 (10), 2200449, 2022
242022
Adjustable leaky-integrate-and-fire neurons based on memristor-coupled capacitors
T Guo, K Pan, B Sun, L Wei, Y Yan, YN Zhou, YA Wu
Materials Today Advances 12, 100192, 2021
232021
A true random number generator based on ionic liquid modulated memristors
B Sun, S Ranjan, G Zhou, T Guo, C Du, L Wei, YN Zhou, YA Wu
ACS Applied Electronic Materials 3 (5), 2380-2388, 2021
232021
Nie można teraz wykonać tej operacji. Spróbuj ponownie później.
Prace 1–20