Mid-infrared InAs/InAsSb superlattice nBn photodetector monolithically integrated onto silicon E Delli, V Letka, PD Hodgson, E Repiso, JP Hayton, AP Craig, Q Lu, ... Acs Photonics 6 (2), 538-544, 2019 | 82 | 2019 |
Low leakage-current InAsSb nanowire photodetectors on silicon MD Thompson, A Alhodaib, AP Craig, A Robson, A Aziz, A Krier, ... Nano letters 16 (1), 182-187, 2016 | 81 | 2016 |
Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb AP Craig, M Jain, G Wicks, T Golding, K Hossain, K McEwan, C Howle, ... Applied Physics Letters 106 (20), 2015 | 68 | 2015 |
Mid-infrared InAs0. 79Sb0. 21-based nBn photodetectors with Al0. 9Ga0. 2As0. 1Sb0. 9 barrier layers, and comparisons with InAs0. 87Sb0. 13 pin diodes, both grown on GaAs using … AP Craig, ARJ Marshall, ZB Tian, S Krishna, A Krier Applied Physics Letters 103 (25), 2013 | 56 | 2013 |
Resonant cavity-enhanced photodetector incorporating a type-II superlattice to extend MWIR sensitivity V Letka, A Bainbridge, AP Craig, F Al-Saymari, ARJ Marshall Optics Express 27 (17), 23970-23980, 2019 | 39 | 2019 |
Resonant cavity enhanced photodiodes on GaSb for the mid-wave infrared AP Craig, F Al-Saymari, M Jain, A Bainbridge, GR Savich, T Golding, ... Applied Physics Letters 114 (15), 2019 | 31 | 2019 |
InAsSb-based nBn photodetectors: lattice mismatched growth on GaAs and low-frequency noise performance AP Craig, MD Thompson, ZB Tian, S Krishna, A Krier, ARJ Marshall Semicond. Sci. Technol 30 (10), 105011, 2015 | 31 | 2015 |
Mid-infrared resonant cavity light emitting diodes operating at 4.5 µm FA Al-Saymari, AP Craig, Q Lu, ARJ Marshall, PJ Carrington, A Krier Optics Express 28 (16), 23338-23353, 2020 | 23 | 2020 |
Mid-infrared type-II InAs/InAsSb quantum wells integrated on silicon E Delli, PD Hodgson, M Bentley, E Repiso, AP Craig, Q Lu, R Beanland, ... Applied Physics Letters 117 (13), 2020 | 21 | 2020 |
III-V semiconductor extended short-wave infrared detectors GR Savich, DE Sidor, X Du, GW Wicks, MC Debnath, TD Mishima, ... Journal of Vacuum Science & Technology B 35 (2), 2017 | 21 | 2017 |
Characterization of 6.1 Å III–V materials grown on GaAs and Si: A comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy AP Craig, PJ Carrington, H Liu, ARJ Marshall Journal of Crystal Growth 435, 56-61, 2016 | 21 | 2016 |
Mid-infrared InAsSb-based nBn photodetectors with AlGaAsSb barrier layers–Grown on GaAs, using an interfacial misfit array, and on native GaSb AP Craig, ARJ Marshall, ZB Tian, S Krishna Infrared Physics & Technology 67, 210-213, 2014 | 20 | 2014 |
A superlattice-based resonant cavity-enhanced photodetector operating in the long-wavelength infrared V Letka, AP Craig, A Bainbridge, ARJ Marshall Applied Physics Letters 117 (7), 2020 | 14 | 2020 |
Monolithically integrated InAsSb-based nBnBn heterostructure on GaAs for infrared detection C Xie, V Pusino, A Khalid, AP Craig, A Marshall, DRS Cumming IEEE Journal of Selected Topics in Quantum Electronics 24 (6), 1-6, 2018 | 14 | 2018 |
Heteroepitaxial integration of mid-infrared InAsSb light emitting diodes on silicon E Delli, PD Hodgson, E Repiso, AP Craig, JP Hayton, Q Lu, ARJ Marshall, ... IEEE Photonics Journal 11 (3), 1-8, 2019 | 13 | 2019 |
Electroluminescence enhancement in mid-infrared InAsSb resonant cavity light emitting diodes for CO2 detection FA Al-Saymari, AP Craig, YJ Noori, Q Lu, ARJ Marshall, A Krier Applied Physics Letters 114 (17), 2019 | 12 | 2019 |
Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays AP Craig, CJ Reyner, ARJ Marshall, DL Huffaker Applied Physics Letters 104 (21), 2014 | 11 | 2014 |
Resonant cavity enhanced photodiodes in the short-wave infrared for spectroscopic detection A Bainbridge, K Mamic, LA Hanks, F Al-Saymari, AP Craig, ARJ Marshall IEEE Photonics Technology Letters 32 (21), 1369-1372, 2020 | 10 | 2020 |
Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 Å materials AP Craig, M Jain, L Meriggi, T Cann, A Niblett, X Collins, ARJ Marshall Applied Physics Letters 114 (5), 2019 | 10 | 2019 |
Impact ionisation in Al0. 9Ga0. 1As0. 08Sb0. 92 for Sb-based avalanche photodiodes X Collins, AP Craig, T Roblin, ARJ Marshall Applied Physics Letters 112 (2), 2018 | 10 | 2018 |