| GaAs nanomembranes in the high electron mobility transistor technology D Gregušová, E Dobročka, P Eliáš, R Stoklas, M Blaho, O Pohorelec, ... Materials 14 (13), 3461, 2021 | 6 | 2021 |
| Investigation of interfaces and threshold voltage instabilities in normally-off MOS-gated InGaN/AlGaN/GaN HEMTs O Pohorelec, M Ťapajna, D Gregušová, F Gucmann, S Hasenöhrl, ... Applied Surface Science 528, 146824, 2020 | 5 | 2020 |
| Creation of two‐dimensional electron gas and role of surface donors in iii‐n metal‐oxide‐semiconductor high‐electron mobility transistors F Gucmann, M Ťapajna, O Pohorelec, Š Haščík, K Hušeková, J Kuzmík physica status solidi (a) 215 (24), 1800090, 2018 | 5 | 2018 |
| InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconductor high-electron mobility transistors with etched access region D Gregušová, L Tóth, O Pohorelec, S Hasenöhrl, Š Haščík, I Cora, ... Japanese Journal of Applied Physics 58 (SC), SCCD21, 2019 | 4 | 2019 |
| Mg Doping of N-Polar, In-Rich InAlN J Kuzmík, O Pohorelec, S Hasenöhrl, M Blaho, R Stoklas, E Dobročka, ... Materials 16 (6), 2250, 2023 | 3 | 2023 |
| Technology and application of in-situ AlOx layers on III-V semiconductors R Kúdela, J Šoltýs, M Kučera, R Stoklas, F Gucmann, M Blaho, M Mičušík, ... Applied Surface Science 461, 33-38, 2018 | 2 | 2018 |
| Effect of HCl pretreatment on the oxide/semiconductor interface state density in AlGaN/GaN MOS-HEMT structures with MOCVD grown A12O3 gate dielectric M Ťapajna, K Hušeková, O Pohorelec, L Válik, S Haščík, F Gucmann, ... 2016 11th International Conference on Advanced Semiconductor Devices …, 2016 | 1 | 2016 |
| Growth and performance of n++ GaN cap layer for HEMTs applications J Kuzmík, M Blaho, D Gregušová, P Eliáš, O Pohorelec, S Hasenöhrl, ... Materials Science in Semiconductor Processing 185, 108959, 2025 | | 2025 |
| Polarization engineering in GaN-based normally-off transistors D Gregušová, O Pohorelec, M Ťapajna, M Blaho, F Gucmann, R Stoklas, ... 2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK …, 2021 | | 2021 |
| GaAs Nanomembranes in the High Electron Mobility Transistor Technology. Materials 2021, 14, 3461 D Gregušová, E Dobrocka, P Eliáš, R Stoklas, M Blaho, O Pohorelec, ... s Note: MDPI stays neutral with regard to jurisdictional claims in published …, 2021 | | 2021 |
