Junqiao Wu

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	Wszystkie	Od 2020
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100 artykułów

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Kin Man YuDepartment of Physics, National Sun Yat Sen University,Kaohsiung, Taiwan, ROCZweryfikowany adres z mail.nsysu.edu.tw
Seth Ariel TongayArizona State UniversityZweryfikowany adres z asu.edu
Joel W. Ager IIISenior Staff Scientist, Lawrence Berkeley Nat. Laboratory and Adjunct Professor, MSE, UC BerkeleyZweryfikowany adres z lbl.gov
Joonki SuhUNIST | Ulsan National Institute of Science and TechnologyZweryfikowany adres z unist.ac.kr
"Changhyun Ko"Associate Professor, Dept. of Materials Physics, Sookmyung Women's UniversityZweryfikowany adres z sookmyung.ac.kr
Kai LiuSchool of Materials Science and Engineering, Tsinghua UniversityZweryfikowany adres z tsinghua.edu.cn
Wen FanUniversity of California, BerkeleyZweryfikowany adres z berkeley.edu
Deyi FuDepartment of Physics, Xiamen UniversityZweryfikowany adres z xmu.edu.cn
Yabin Chen (陈亚彬)Beijing Institute of TechnologyZweryfikowany adres z bit.edu.cn
Costas GrigoropoulosProfessor of Mechanical Engineering, University of California, BerkeleyZweryfikowany adres z berkeley.edu
Sangwook LeeMaterials Science & Engineering, Kyungpook National UniversityZweryfikowany adres z knu.ac.kr
Jun KangAssistant Professor, Beijing Computational Science Research CenterZweryfikowany adres z csrc.ac.cn
Can ATACAAssociate ProfessorZweryfikowany adres z umbc.edu
Chun ChengSouthern University of Science and Technology of ChinaZweryfikowany adres z sustech.edu.cn
D. Frank OgletreeStaff Scientist, Molecular Foundry, Lawrence Berkeley National LabZweryfikowany adres z lbl.gov
Michael A. (Mike) ScarpullaProfessor, MSE & ECE, University of UtahZweryfikowany adres z utah.edu
Alexander LuceUniversity of California, BerkeleyZweryfikowany adres z berkeley.edu
Kedar HippalgaonkarNanyang Technological University (MSE), A*STAR (IMRE)Zweryfikowany adres z ntu.edu.sg
Hongkun ParkHarvard UniversityZweryfikowany adres z harvard.edu

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Junqiao Wu

Professor and Chair of Materials Science, University of California, Berkeley

Zweryfikowany adres z berkeley.edu - Strona główna

Materials Science semiconductor materials electronic materials


Tytuł Sortuj wg cytatów Sortuj wg roku Sortuj wg tytułu	Cytowane przez Cytowane przez	Rok
Ultrafast charge transfer in atomically thin MoS₂/WS₂ heterostructures X Hong, J Kim, SF Shi, Y Zhang, C Jin, Y Sun, S Tongay, J Wu, Y Zhang, ... Nature nanotechnology 9 (9), 682-686, 2014	2313	2014
Unusual properties of the fundamental band gap of InN J Wu, W Walukiewicz, KM Yu, JW Ager Iii, EE Haller, H Lu, WJ Schaff, ... Applied Physics Letters 80 (21), 3967-3969, 2002	2019	2002
Band offsets and heterostructures of two-dimensional semiconductors J Kang, S Tongay, J Zhou, J Li, J Wu Applied Physics Letters 102 (1), 2013	1817	2013
Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe₂ versus MoS₂ S Tongay, J Zhou, C Ataca, K Lo, TS Matthews, J Li, JC Grossman, J Wu Nano letters 12 (11), 5576-5580, 2012	1560	2012
When group-III nitrides go infrared: New properties and perspectives J Wu Journal of applied physics 106 (1), 2009	1232	2009
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons S Tongay, J Suh, C Ataca, W Fan, A Luce, JS Kang, J Liu, C Ko, ... Scientific reports 3 (1), 2657, 2013	1229	2013
Monolayer behaviour in bulk ReS₂ due to electronic and vibrational decoupling S Tongay, H Sahin, C Ko, A Luce, W Fan, K Liu, J Zhou, YS Huang, ... Nature communications 5 (1), 3252, 2014	1114	2014
Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS₂ and WS₂ Monolayers S Tongay, W Fan, J Kang, J Park, U Koldemir, J Suh, DS Narang, K Liu, ... Nano letters 14 (6), 3185-3190, 2014	882	2014
Small band gap bowing in In1− xGaxN alloys J Wu, W Walukiewicz, KM Yu, JW Ager, EE Haller, H Lu, WJ Schaff Applied Physics Letters 80 (25), 4741-4743, 2002	869	2002
Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating S Tongay, J Zhou, C Ataca, J Liu, JS Kang, TS Matthews, L You, J Li, ... Nano letters 13 (6), 2831-2836, 2013	864	2013
Superior radiation resistance of alloys: Full-solar-spectrum photovoltaic material system J Wu, W Walukiewicz, KM Yu, W Shan, JW Ager Iii, EE Haller, H Lu, ... Journal of Applied Physics 94 (10), 6477-6482, 2003	818	2003
Doping against the Native Propensity of MoS₂: Degenerate Hole Doping by Cation Substitution J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ... Nano letters 14 (12), 6976-6982, 2014	759	2014
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS₂, WS₂, and Their Bilayer Heterostructures K Liu, Q Yan, M Chen, W Fan, Y Sun, J Suh, D Fu, S Lee, J Zhou, ... Nano letters 14 (9), 5097-5103, 2014	696	2014
Strain engineering and one-dimensional organization of metal–insulator domains in single-crystal vanadium dioxide beams J Cao, E Ertekin, V Srinivasan, W Fan, S Huang, H Zheng, JWL Yim, ... Nature nanotechnology 4 (11), 732-737, 2009	691	2009
Effects of the narrow band gap on the properties of InN J Wu, W Walukiewicz, W Shan, KM Yu, JW Ager III, EE Haller, H Lu, ... Physical Review B 66 (20), 201403, 2002	574	2002
Anomalous Raman spectra and thickness-dependent electronic properties of WSe H Sahin, S Tongay, S Horzum, W Fan, J Zhou, J Li, J Wu, FM Peeters Physical Review B—Condensed Matter and Materials Physics 87 (16), 165409, 2013	563	2013
Temperature dependence of the fundamental band gap of InN J Wu, W Walukiewicz, W Shan, KM Yu, JW Ager Iii, SX Li, EE Haller, H Lu, ... Journal of Applied Physics 94 (7), 4457-4460, 2003	530	2003
Two-dimensional materials for thermal management applications H Song, J Liu, B Liu, J Wu, HM Cheng, F Kang Joule 2 (3), 442-463, 2018	513	2018
Recent progresses on physics and applications of vanadium dioxide K Liu, S Lee, S Yang, O Delaire, J Wu Materials Today 21 (8), 875-896, 2018	483	2018
Valence-band anticrossing in mismatched III-V semiconductor alloys K Alberi, J Wu, W Walukiewicz, KM Yu, OD Dubon, SP Watkins, CX Wang, ... Physical Review B—Condensed Matter and Materials Physics 75 (4), 045203, 2007	480	2007

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