A four-terminal, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation N El-Hinnawy, P Borodulin, B Wagner, MR King, JS Mason, EB Jones, ...
IEEE Electron Device Letters 34 (10), 1313-1315, 2013
151 2013 X-ray excited luminescence and local structures in Tb-doped Y2O3 nanocrystals YL Soo, SW Huang, ZH Ming, YH Kao, GC Smith, E Goldburt, R Hodel, ...
Journal of Applied Physics 83 (10), 5404-5409, 1998
113 1998 A 7.3 THz cut-off frequency, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation N El-Hinnawy, P Borodulin, BP Wagner, MR King, JS Mason, EB Jones, ...
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2013
107 2013 Cascode power switch topologies TR McNutt, JV Reichl, HC Heame III, EJ Stewart, SD Van Campen, ...
US Patent 7,719,055, 2010
106 2010 Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker DP Urciuoli, V Veliadis, HC Ha, V Lubomirsky
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and …, 2011
94 2011 Composite nanophosphor screen for detecting radiation RN Bhargava
US Patent 5,952,665, 1999
77 1999 A 2055-V (at 0.7 {mA/cm}(2)) 24-A (at 706 {W/cm}(2)) Normally On 4H-SiC JFET With 6.8-{mm}(2) Active Area and Blocking-Voltage Capability Reaching the Material Limit V Veliadis, M Snook, T McNutt, H Hearne, P Potyraj, A Lelis, C Scozzie
IEEE Electron Device Letters 29 (12), 1325-1327, 2008
60 2008 A 1680-V (at 1 V Veliadis, T McNutt, M Snook, H Hearne, P Potyraj, C Scozzie
IEEE Electron Device Letters 29 (10), 1132-1134, 2008
54 2008 Transformation of deep impurities to shallow impurities by quantum confinement RN Bhargava, V Chhabra, B Kulkarni, JV Veliadis
physica status solidi (b) 210 (2), 621-629, 1998
51 1998 Controlled agglomeration of Tb-doped YL Soo, SW Huang, YH Kao, V Chhabra, B Kulkarni, JVD Veliadis, ...
Applied physics letters 75 (16), 2464-2466, 1999
47 1999 Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage LS Chen, V Veliadis
US Patent 7,372,087, 2008
45 2008 Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150 V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha, ...
IEEE electron device letters 34 (3), 384-386, 2013
41 2013 A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation V Veliadis, EJ Stewart, H Hearne, M Snook, A Lelis, C Scozzie
IEEE Electron Device Letters 31 (5), 470-472, 2010
38 2010 600-V/2-A symmetrical bi-directional power flow using vertical-channel JFETs connected in common source configuration V Veliadis, D Urciuoli, H Hearne, HC Ha, R Howell, C Scozzie
Materials Science Forum 645, 1147-1150, 2010
32 2010 Composite nanophosphor screen for detecting radiation having optically reflective coatings RN Bhargava, NR Taskar, V Chhabra, JVD Veliadis
US Patent 6,300,640, 2001
32 2001 Investigation of the suitability of 1200-V normally-off recessed-implanted-gate SiC VJFETs for efficient power-switching applications V Veliadis, H Hearne, EJ Stewart, HC Ha, M Snook, T McNutt, R Howell, ...
IEEE electron device letters 30 (7), 736-738, 2009
31 2009 Microchannel high resolution X-ray sensor having an integrated photomultiplier NR Taskar, JVD Veliadis, V Chhabra, B Kulkarni, N Pandit, RN Bhargava, ...
US Patent 6,452,184, 2002
31 2002 Effect of capacitive current on reverse recovery of body diode of 10kV SiC MOSFETs and external 10kV SiC JBS diodes A Kumar, K Vechalapu, S Bhattacharya, V Veliadis, E Van Brunt, D Grider, ...
2017 IEEE 5th Workshop on wide bandgap power devices and applications (WiPDA …, 2017
30 2017 Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 V solid-state circuit breakers V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 874-879, 2016
30 2016 Degradation and full recovery in high-voltage implanted-gate SiC JFETs subjected to bipolar current stress V Veliadis, H Hearne, EJ Stewart, M Snook, W Chang, JD Caldwell, ...
IEEE electron device letters 33 (7), 952-954, 2012
29 2012