Artykuły udostępnione publicznie: - Ji-Hyeon PARKWięcej informacji
Niedostępne w żadnym miejscu: 5
Single β-Ga2O3 nanowire based lateral FinFET on Si
S Xu, L Liu, G Qu, X Zhang, C Jia, S Wu, Y Ma, YJ Lee, G Wang, JH Park, ...
Applied Physics Letters 120 (15), 2022
Upoważnienia: Chinese Academy of Sciences
High mobility of intrinsic defects in α-Ga2O3
A Azarov, JH Park, DW Jeon, A Kuznetsov
Applied Physics Letters 122 (18), 2023
Upoważnienia: Research Council of Norway
Single β-Ga2O3 nanowire back-gate field-effect transistor
G Qu, S Xu, L Liu, M Tang, S Wu, C Jia, X Zhang, W Song, YJ Lee, J Xu, ...
Semiconductor Science and Technology 37 (8), 085009, 2022
Upoważnienia: Chinese Academy of Sciences
β-Ga2O3 Air-Channel Field-Emission Nanodiode with Ultrahigh Current Density and Low Turn-On Voltage
M Tang, C Ma, L Liu, X Tan, Y Li, YJ Lee, G Wang, DW Jeon, JH Park, ...
Nano Letters 24 (5), 1769-1775, 2024
Upoważnienia: Chinese Academy of Sciences
Low frequency noise in β-Ga2O3 based nanoelectronic devices
M Tang, L Liu, C Jia, S Wu, YJ Lee, G Wang, Y Ma, DW Jeon, JH Park, ...
Applied Physics Letters 123 (1), 2023
Upoważnienia: Chinese Academy of Sciences
Dostępne w jakimś miejscu: 11
IL-4 abrogates TH17 cell-mediated inflammation by selective silencing of IL-23 in antigen-presenting cells
E Guenova, Y Skabytska, W Hoetzenecker, G Weindl, K Sauer, M Tham, ...
Proceedings of the National Academy of Sciences 112 (7), 2163-2168, 2015
Upoważnienia: Swiss National Science Foundation, US National Institutes of Health, German …
ROS-induced ATF3 causes susceptibility to secondary infections during sepsis-associated immunosuppression
W Hoetzenecker, B Echtenacher, E Guenova, K Hoetzenecker, ...
Nature medicine 18 (1), 128-134, 2012
Upoważnienia: US National Institutes of Health, German Research Foundation
A review of the growth, doping, and applications of Beta-Ga2O3 thin films
M Razeghi, JH Park, R McClintock, D Pavlidis, FH Teherani, DJ Rogers, ...
oxide-based materials and devices IX 10533, 21-44, 2018
Upoważnienia: US National Science Foundation
Strain-Induced Metastable Phase Stabilization in Ga2O3 Thin Films
Y Xu, JH Park, Z Yao, C Wolverton, M Razeghi, J Wu, VP Dravid
ACS applied materials & interfaces 11 (5), 5536-5543, 2019
Upoważnienia: US National Science Foundation
Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire substrate by MOCVD
JH Park, R McClintock, M Razeghi
Semiconductor Science and Technology 34 (8), 08LT01, 2019
Upoważnienia: US National Science Foundation
MOCVD grown β-Ga2O3 metal-oxide-semiconductor field effect transistors on sapphire
JH Park, R McClintock, A Jaud, A Dehzangi, M Razeghi
Applied Physics Express 12 (9), 095503, 2019
Upoważnienia: US National Science Foundation
H trapping at the metastable cation vacancy in α-Ga2O3 and α-Al2O3
A Venzie, A Portoff, M Stavola, WB Fowler, J Kim, DW Jeon, JH Park, ...
Applied Physics Letters 120 (19), 2022
Upoważnienia: US National Science Foundation, US Department of Defense
Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition
C Jia, DW Jeon, J Xu, X Yi, JH Park, Y Zhang
Nanomaterials 10 (6), 1031, 2020
Upoważnienia: Chinese Academy of Sciences
Thermal analysis of an α-Ga2O3 MOSFET using micro-Raman spectroscopy
A Karim, Y Song, DC Shoemaker, DW Jeon, JH Park, JK Mun, HK Lee, ...
Applied Physics Letters 123 (19), 2023
Upoważnienia: US National Science Foundation, US Department of Defense
Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600° C
X Xia, JS Li, CC Chiang, TJ Yoo, E Hershkovitz, F Ren, H Kim, J Kim, ...
Journal of Vacuum Science & Technology A 40 (6), 2022
Upoważnienia: US National Science Foundation, US Department of Defense
Determination of Type II Band Alignment of NiO/α-Ga2O3 For Annealing Temperatures Up To 600° C
X Xia, JS Li, CC Chiang, TJ Yoo, E Hershkovitz, F Ren, H Kim, J Kim, ...
ECS Transactions 111 (2), 61, 2023
Upoważnienia: US National Science Foundation, US Department of Defense
Informacje na temat publikacji i finansowania automatycznie określa program komputerowy