Influence of GaN stress on threshold voltage shift in AlGaN/GaN high-electron-mobility transistors on Si under off-state electrical bias AF Wilson, A Wakejima, T Egawa
Applied physics express 6 (8), 086504, 2013
27 2013 Evaluation of Electron Trapping Speed of AlGaN/GaN HEMT With Real-Time Electroluminescence and Pulsed A Wakejima, AF Wilson, S Mase, T Joka, T Egawa
IEEE transactions on electron devices 60 (10), 3183-3189, 2013
24 2013 Step-stress reliability studies on AlGaN/GaN high electron mobility transistors on silicon with buffer thickness dependence AF Wilson, A Wakejima, T Egawa
Applied Physics Express 6 (5), 056501, 2013
16 2013 A HEMT amplifier for NRD guide integrated circuit A Wilson
The 3rd Asia-Pacific Microwave Conference, Tokyo, Japan, 1990, 147-150, 1990
7 1990 Influence of chamber pressure on the crystal quality of homo-epitaxial GaN grown by radical-enhanced MOCVD (REMOCVD) FW Amalraj, N Shimizu, O Oda, K Ishikawa, M Hori
Journal of Crystal Growth 549, 125863, 2020
6 2020 Effects of plasma shield plate design on epitaxial GaN films grown for large-sized wafers in radical-enhanced metalorganic chemical vapor deposition Y Isobe, T Sakai, N Sugiyama, I Mizushima, K Suguro, N Miyashita, Y Lu, ...
Journal of Vacuum Science & Technology B 37 (3), 2019
6 2019 Effect of N2/H2 plasma on GaN substrate cleaning for homoepitaxial GaN growth by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) FW Amalraj, AK Dhasiyan, Y Lu, N Shimizu, O Oda, K Ishikawa, H Kondo, ...
AIP Advances 8 (11), 2018
5 2018 Origin and appearance of defective pits in the gate–drain region during reliability measurements of AlGaN/GaN high-electron-mobility transistors on Si AF Wilson, A Wakejima, T Egawa
Applied Physics Express 6 (11), 116601, 2013
5 2013 Simulation-aided design of very-high-frequency excited nitrogen plasma confinement using a shield plate Y Isobe, T Sakai, K Suguro, N Miyashita, H Kondo, K Ishikawa, AF Wilson, ...
Journal of Vacuum Science & Technology B 37 (6), 2019
3 2019 Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition AK Dhasiyan, FW Amalraj, S Jayaprasad, N Shimizu, O Oda, K Ishikawa, ...
Scientific Reports 14 (1), 10861, 2024
1 2024 Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition AK Dhasiyan, FW Amalraj, S Jayaprasad, N Shimizu, O Oda, K Ishikawa, ...
Scientific Reports 14, 30575, 2024
2024 Gas-phase study of the behavior of trimethyl gallium and triethyl gallium by optical emission spectroscopy and quadrupole mass spectroscopy for the growth of GaN by REMOCVD … AK Dhasiyan, S Jayaprasad, FW Amalraj, N Shimizu, O Oda, K Ishikawa, ...
Japanese Journal of Applied Physics 62 (SN), SN1019, 2023
2023 Surface Treatment Method of GaN Substrates for Homoepitaxial GaN Growth by REMOCVD FW Amalraj, AK Dhasiyan, N Shimizu, O Oda, H Kondo, K Ishikawa, ...
JSAP Annual Meetings Extended Abstracts The 79th JSAP Autumn Meeting 2018 …, 2018
2018 Effects of in-situ irradiation of nitrogen-hydrogen plasma on flatness and composition of GaN surfaces before epitaxial growth by a radical-enhanced metalorganic chemical vapor … H Kondo, AF Wilson, DA Kumar, Y Lu, N Shimizu, O Oda, K Ishikawa, ...
APS Annual Gaseous Electronics Meeting Abstracts, TF2. 002, 2018
2018 Reliability Studies on MOCVD Grown AlGaN/GaN HEMT on Si Substrate F Wilson Amalraj
名古屋工業大学, 2014
2014 Effect of Buffer Thickness on Degradation of AlGaN/GaN HEMTs on Si T Egawa, A Wakejima, AF Wilson
Extended Abstracts of the 2012 International Conference on Solid State …, 2012
2012 Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence AF Wilson, A Wakejima, T Egawa
電子情報通信学会技術研究報告= IEICE technical report: 信学技報 111 (374), 87-90, 2012
2012 Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence SL Selvaraj, A Wakejima, AF Wilson, T Egawa
Extended Abstracts of the 2011 International Conference on Solid State …, 2011
2011 Step-stress Reliability Studies on AlGaN/GaN HEMTs on Siliconwith Buffer Thickness Dependence AF WILSON
Solid State Device Meeting Dig., 2011 632, 2011
2011 Effect of Buffer Thickness on Degradation of AlGaN/GaN HEMTs on Si AF Wilson, A Wakejima, T Egawa
Hiroki KondoNagoya UniversityZweryfikowany adres z nagoya-u.jp