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Vincent Consonni
Vincent Consonni
Research Scientist, CNRS, LMGP (CNRS-Grenoble INP), Grenoble, France
Zweryfikowany adres z grenoble-inp.fr - Strona główna
Tytuł
Cytowane przez
Cytowane przez
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Nucleation mechanisms of epitaxial GaN nanowires: Origin of their self-induced formation and initial radius
V Consonni, M Knelangen, L Geelhaar, A Trampert, H Riechert
Physical Review B—Condensed Matter and Materials Physics 81 (8), 085310, 2010
1952010
Effects of hexamethylenetetramine on the nucleation and radial growth of ZnO nanowires by chemical bath deposition
R Parize, J Garnier, O Chaix-Pluchery, C Verrier, E Appert, V Consonni
The Journal of Physical Chemistry C 120 (9), 5242-5250, 2016
1602016
Nucleation mechanisms of self-induced GaN nanowires grown on an amorphous interlayer
V Consonni, M Hanke, M Knelangen, L Geelhaar, A Trampert, H Riechert
Physical Review B—Condensed Matter and Materials Physics 83 (3), 035310, 2011
1522011
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ...
Applied Physics Reviews 3 (4), 2016
1492016
ZnO nanowires for solar cells: A comprehensive review
V Consonni, J Briscoe, E Kärber, X Li, T Cossuet
Nanotechnology 30 (36), 362001, 2019
1472019
Critical nucleation effects on the structural relationship between ZnO seed layer and nanowires
S Guillemin, V Consonni, E Appert, E Puyoo, L Rapenne, H Roussel
The Journal of Physical Chemistry C 116 (47), 25106-25111, 2012
1222012
Quantitative description for the growth rate of self-induced GaN nanowires
V Consonni, VG Dubrovskii, A Trampert, L Geelhaar, H Riechert
Physical Review B—Condensed Matter and Materials Physics 85 (15), 155313, 2012
1172012
Self‐induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanisms
V Consonni
physica status solidi (RRL)–Rapid Research Letters 7 (10), 699-712, 2013
1132013
Effects of nanowire coalescence on their structural and optical properties on a local scale
V Consonni, M Knelangen, U Jahn, A Trampert, L Geelhaar, H Riechert
Applied Physics Letters 95 (24), 2009
1112009
Polarity in ZnO nanowires: A critical issue for piezotronic and piezoelectric devices
V Consonni, AM Lord
Nano Energy 83, 105789, 2021
1092021
In situ analysis of the crystallization process of Sb2S3 thin films by Raman scattering and X-ray diffraction
R Parize, T Cossuet, O Chaix-Pluchery, H Roussel, E Appert, V Consonni
Materials & Design 121, 1-10, 2017
1012017
Selective area growth of well-ordered ZnO nanowire arrays with controllable polarity
V Consonni, E Sarigiannidou, E Appert, A Bocheux, S Guillemin, ...
ACS nano 8 (5), 4761-4770, 2014
992014
ZnO/CuCrO2 Core–Shell Nanowire Heterostructures for Self‐Powered UV Photodetectors with Fast Response
T Cossuet, J Resende, L Rapenne, O Chaix‐Pluchery, C Jiménez, ...
Advanced Functional Materials 28 (43), 1803142, 2018
952018
Preferential orientation of fluorine-doped SnO2 thin films: The effects of growth temperature
V Consonni, G Rey, H Roussel, B Doisneau, E Blanquet, D Bellet
Acta materialia 61 (1), 22-31, 2013
882013
Formation mechanisms of ZnO nanowires: the crucial role of crystal orientation and polarity
S Guillemin, L Rapenne, H Roussel, E Sarigiannidou, G Brémond, ...
The Journal of Physical Chemistry C 117 (40), 20738-20745, 2013
872013
Unpinning the Fermi level of GaN nanowires by ultraviolet radiation
C Pfüller, O Brandt, F Grosse, T Flissikowski, C Chèze, V Consonni, ...
Physical Review B—Condensed Matter and Materials Physics 82 (4), 045320, 2010
862010
ZnO/TiO2/Sb2S3 Core–Shell Nanowire Heterostructure for Extremely Thin Absorber Solar Cells
R Parize, A Katerski, I Gromyko, L Rapenne, H Roussel, E Kärber, ...
The Journal of Physical Chemistry C 121 (18), 9672-9680, 2017
822017
Physical properties of annealed ZnO nanowire/CuSCN heterojunctions for self-powered UV photodetectors
J Garnier, R Parize, E Appert, O Chaix-Pluchery, A Kaminski-Cachopo, ...
ACS applied materials & interfaces 7 (10), 5820-5829, 2015
802015
Scaling thermodynamic model for the self-induced nucleation of GaN nanowires
VG Dubrovskii, V Consonni, A Trampert, L Geelhaar, H Riechert
Physical Review B—Condensed Matter and Materials Physics 85 (16), 165317, 2012
772012
Electron scattering mechanisms in fluorine-doped SnO2 thin films
G Rey, C Ternon, M Modreanu, X Mescot, V Consonni, D Bellet
Journal of Applied Physics 114 (18), 2013
762013
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