Obserwuj
JAIKWANG SHIN
JAIKWANG SHIN
Samsung Advanced Institute of Technology, Samsung Electronics
Zweryfikowany adres z samsung.com
Tytuł
Cytowane przez
Cytowane przez
Rok
p-GaN gate HEMTs with tungsten gate metal for high threshold voltage and low gate current
I Hwang, J Kim, HS Choi, H Choi, J Lee, KY Kim, JB Park, JC Lee, J Ha, ...
IEEE Electron Device Letters 34 (2), 202-204, 2013
3082013
Deep level trapped defect analysis in CH 3 NH 3 PbI 3 perovskite solar cells by deep level transient spectroscopy
S Heo, G Seo, Y Lee, D Lee, M Seol, J Lee, JB Park, K Kim, DJ Yun, ...
Energy & Environmental Science 10 (5), 1128-1133, 2017
2652017
Strain-driven electronic band structure modulation of Si nanowires
KH Hong, J Kim, SH Lee, JK Shin
Nano letters 8 (5), 1335-1340, 2008
2082008
Effects of TMAH Treatment on Device Performance of Normally Off MOSFET
KW Kim, SD Jung, DS Kim, HS Kang, KS Im, JJ Oh, JB Ha, JK Shin, ...
IEEE electron device letters 32 (10), 1376-1378, 2011
1942011
A comparative study of structural changes in lithium nickel cobalt manganese oxide as a function of Ni content during delithiation process
K Min, K Kim, C Jung, SW Seo, YY Song, HS Lee, J Shin, E Cho
Journal of Power Sources 315, 111-119, 2016
1472016
Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses
J Park, JH Choi, K Kong, JH Han, JH Park, N Kim, E Lee, D Kim, J Kim, ...
Nature Photonics 15 (6), 449-455, 2021
1422021
The structural and electrical evolution of graphene by oxygen plasma-induced disorder
DC Kim, DY Jeon, HJ Chung, YS Woo, JK Shin, S Seo
Nanotechnology 20 (37), 375703, 2009
1332009
1.6kV, 2.9 mΩ cm2 normally-off p-GaN HEMT device
I Hwang, H Choi, JW Lee, HS Choi, J Kim, J Ha, CY Um, SK Hwang, J Oh, ...
2012 24th international symposium on power semiconductor devices and ICs, 41-44, 2012
1262012
Impact of channel hot electrons on current collapse in AlGaN/GaN HEMTs
I Hwang, J Kim, S Chong, HS Choi, SK Hwang, J Oh, JK Shin, UI Chung
IEEE electron device letters 34 (12), 1494-1496, 2013
1212013
Deep-learning-based inverse design model for intelligent discovery of organic molecules
K Kim, S Kang, J Yoo, Y Kwon, Y Nam, D Lee, I Kim, YS Choi, Y Jung, ...
npj Computational Materials 4 (1), 67, 2018
1152018
Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition
J Heo, HJ Chung, SH Lee, H Yang, DH Seo, JK Shin, UI Chung, S Seo, ...
Physical Review B—Condensed Matter and Materials Physics 84 (3), 035421, 2011
1072011
Band gap opening by two-dimensional manifestation of Peierls instability in graphene
SH Lee, HJ Chung, J Heo, H Yang, J Shin, UI Chung, S Seo
Acs Nano 5 (4), 2964-2969, 2011
892011
Nonvolatile memory cells and nonvolatile memory devices including the same
HJ Kim, I Yoo, JK Shin, CJ Kim, MJ Lee, K Hong
US Patent 8,203,863, 2012
852012
Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor deposition
I Jeon, H Yang, SH Lee, J Heo, DH Seo, J Shin, UI Chung, ZG Kim, ...
Acs Nano 5 (3), 1915-1920, 2011
822011
Interfacial adhesion behavior of polyimides on silica glass: A molecular dynamics study
K Min, Y Kim, S Goyal, SH Lee, M McKenzie, H Park, ES Savoy, ...
Polymer 98, 1-10, 2016
672016
Reliability issues and models of sub-90nm NAND flash memory cells
H Yang, H Kim, S Park, J Kim, SH Lee, JK Choi, D Hwang, C Kim, M Park, ...
2006 8th International Conference on Solid-State and Integrated Circuit …, 2006
672006
Source-connected p-GaN gate HEMTs for increased threshold voltage
I Hwang, J Oh, HS Choi, J Kim, H Choi, J Kim, S Chong, J Shin, UI Chung
IEEE electron device letters 34 (5), 605-607, 2013
592013
Verification of Interface State Properties of a-InGaZnO Thin-Film Transistors With and Gate Dielectrics by Low-Frequency Noise Measurements
HS Choi, S Jeon, H Kim, J Shin, C Kim, UI Chung
IEEE electron device letters 32 (8), 1083-1085, 2011
572011
Origins of high performance and degradation in the mixed perovskite solar cells
S Heo, G Seo, Y Lee, M Seol, SH Kim, DJ Yun, Y Kim, K Kim, J Lee, J Lee, ...
Advanced Materials 31 (8), 1805438, 2019
512019
Understanding the structural, electrical, and optical properties of monolayer h-phase RuO2 nanosheets: a combined experimental and computational study
DS Ko, WJ Lee, S Sul, C Jung, DJ Yun, HG Kim, WJ Son, JG Chung, ...
NPG Asia Materials 10 (4), 266-276, 2018
492018
Nie można teraz wykonać tej operacji. Spróbuj ponownie później.
Prace 1–20