| Large scale growth and characterization of atomic hexagonal boron nitride layers L Song, L Ci, H Lu, PB Sorokin, C Jin, J Ni, AG Kvashnin, DG Kvashnin, ... Nano Letters 10 (8), 3209-3215, 2010 | 2991 | 2010 |
| Atomic layers of hybridized boron nitride and graphene domains L Ci, L Song, C Jin, D Jariwala, D Wu, Y Li, A Srivastava, ZF Wang, K Storr, ... Nature Materials 9 (5), 430-435, 2010 | 2487 | 2010 |
| Exploring atomic defects in molybdenum disulphide monolayers J Hong, Z Hu, M Probert, K Li, D Lv, X Yang, L Gu, N Mao, Q Feng, L Xie, ... Nature Communications 6, 6293, 2015 | 1540 | 2015 |
| Fabrication of a freestanding boron nitride single layer and its defect assignments C Jin, F Lin, K Suenaga, S Iijima Physical Review Letters 102 (19), 195505, 2009 | 1274 | 2009 |
| Graphene annealing: how clean can it be? YC Lin, CC Lu, CH Yeh, C Jin, K Suenaga, PW Chiu Nano letters 12 (1), 414-419, 2012 | 1154 | 2012 |
| Plasma-assisted fabrication of monolayer phosphorene and its Raman characterization W Lu, H Nan, J Hong, Y Chen, C Zhu, Z Liang, X Ma, Z Ni, C Jin, Z Zhang Nano Research 7, 853-859, 2014 | 756 | 2014 |
| Deriving carbon atomic chains from graphene C Jin, H Lan, L Peng, K Suenaga, S Iijima Physical Review Letters 102 (20), 205501, 2009 | 741 | 2009 |
| Towards polyvalent ion batteries: a zinc-ion battery based on NASICON structured Na3V2(PO4)3 G Li, Z Yang, Y Jiang, C Jin, W Huang, X Ding, Y Huang Nano Energy 25, 211-217, 2016 | 681 | 2016 |
| Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe 2 hetero-bilayers C Zhang, CP Chuu, X Ren, MY Li, LJ Li, C Jin, MY Chou, CK Shih Science Advances 3 (1), e1601459, 2017 | 593 | 2017 |
| Highly active and durable methanol oxidation electrocatalyst based on the synergy of platinum–nickel hydroxide–graphene W Huang, H Wang, J Zhou, J Wang, PN Duchesne, D Muir, P Zhang, ... Nature communications 6 (1), 1-8, 2015 | 549 | 2015 |
| Growth of large-area 2D MoS2(1-x)Se2x semiconductor alloys Q Feng, Y Zhu, J Hong, M Zhang, W Duan, N Mao, J Wu, H Xu, F Dong, ... Advanced Materials 26 (17), 2648-2653, 2014 | 458 | 2014 |
| Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics L Liu, J Han, L Xu, J Zhou, C Zhao, S Ding, H Shi, M Xiao, L Ding, Z Ma, ... Science 368 (6493), 850-856, 2020 | 445 | 2020 |
| Clean transfer of graphene for isolation and suspension YC Lin, C Jin, JC Lee, SF Jen, K Suenaga, PW Chiu ACS Nano 5 (3), 2362-2368, 2011 | 406 | 2011 |
| Ultrasmall and phase-pure W2C nanoparticles for efficient electrocatalytic and photoelectrochemical hydrogen evolution Q Gong, Y Wang, Q Hu, J Zhou, R Feng, PN Duchesne, P Zhang, F Chen, ... Nature Communications 7, 13216, 2016 | 404 | 2016 |
| Quantitative analysis of current–voltage characteristics of semiconducting nanowires: decoupling of contact effects Z Zhang, K Yao, Y Liu, C Jin, X Liang, Q Chen, LM Peng Advanced Functional Materials 17 (14), 2478-2489, 2007 | 379 | 2007 |
| Ultrastiff and strong graphene fibers via full-scale synergetic defect engineering Z Xu, Y Liu, X Zhao, L Peng, H Sun, Y Xu, X Ren, C Jin, P Xu, M Wang, ... Advanced Materials, 2016 | 360 | 2016 |
| Epitaxy and photoresponse of two-dimensional GaSe crystals on flexible transparent mica sheets Y Zhou, Y Nie, Y Liu, K Yan, J Hong, C Jin, Y Zhou, J Yin, Z Liu, H Peng ACS Nano 8 (2), 1485-1490, 2014 | 351 | 2014 |
| Current-voltage characteristics and parameter retrieval of semiconducting nanowires ZY Zhang, CH Jin, XL Liang, Q Chen, LM Peng Applied Physics Letters 88 (7), 2006 | 349 | 2006 |
| Electron knock-on damage in hexagonal boron nitride monolayers J Kotakoski, CH Jin, O Lehtinen, K Suenaga, AV Krasheninnikov Physical Review B—Condensed Matter and Materials Physics 82 (11), 113404, 2010 | 335 | 2010 |
| High mobility 2D palladium diselenide field-effect transistors with tunable ambipolar characteristics WL Chow, P Yu, F Liu, J Hong, X Wang, Q Zeng, CH Hsu, C Zhu, J Zhou, ... Advanced Materials 29 (21), 1602969, 2017 | 329 | 2017 |
Jinhua HongNational Institute of AISTZweryfikowany adres z aist.go.jp