Gregor Koblmüller

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Jonathan J. FinleyProfessor of Semiconductor Quantum NanoscienceZweryfikowany adres z wsi.tum.de
Gerhard AbstreiterTU München, Walter Schottky Institut, Institute for Advanced StudyZweryfikowany adres z wsi.tum.de
Jim SpeckProfessor of Materials, UCSBZweryfikowany adres z ucsb.edu
Benedikt MayerMax Planck Institut of Quantum OpticsZweryfikowany adres z mpq.mpg.de
Hubert J. KrennerProfessor of Experimental Physics at Universität MünsterZweryfikowany adres z uni-muenster.de
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikZweryfikowany adres z pdi-berlin.de
Lincoln J LauhonNorthwestern UniversityZweryfikowany adres z northwestern.edu
Ilaria ZardoDepartment of Physics - University of BaselZweryfikowany adres z unibas.ch
Paolo LugliFree University of Bozen-BolzanoZweryfikowany adres z unibz.it
Kai MüllerWalter Schottky Institute, Technical University Munich, GermanyZweryfikowany adres z wsi.tum.de
Nari JeonChungnam National UniversityZweryfikowany adres z cnu.ac.kr
Alexander HolleitnerTU MünchenZweryfikowany adres z wsi.tum.de
Yee Kan KOHNational University of SingaporeZweryfikowany adres z nus.edu.sg
Filip TuomistoProfessor, University of HelsinkiZweryfikowany adres z helsinki.fi
Sergio Fernández-GarridoAssociate Professor in Materials Science and ERC-CoG Grantee at Universidad Politécnica de MadridZweryfikowany adres z upm.es
Joel W. Ager IIISenior Staff Scientist, Lawrence Berkeley Nat. Laboratory and Adjunct Professor, MSE, UC BerkeleyZweryfikowany adres z lbl.gov
Tim VealProfessor of Materials Physics, Stephenson Inst. for Ren. Energy and Physics, Univ. of LiverpoolZweryfikowany adres z liverpool.ac.uk
Wolfgang PorodFreimann Professor of Electrical Engineering, University of Notre DameZweryfikowany adres z nd.edu
Umesh MishraUCSBZweryfikowany adres z ece.ucsb.edu
Martin StutzmannProfessor (retired) of Experimental Physics, Walter Schottky Institut, TU MünchenZweryfikowany adres z tum.de

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Gregor Koblmüller

Walter Schottky Institut and Physics Department, Technical University of Munich

Zweryfikowany adres z wsi.tum.de - Strona główna

Semiconductors Nanotechnology Photonics Molecular Beam Epitaxy Nitrides


Tytuł Sortuj wg cytatów Sortuj wg roku Sortuj wg tytułu	Cytowane przez Cytowane przez	Rok
Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature B Mayer, D Rudolph, J Schnell, S Morkötter, J Winnerl, J Treu, K Müller, ... Nature communications 4 (1), 2931, 2013	281	2013
In-polar InN grown by plasma-assisted molecular beam epitaxy CS Gallinat, G Koblmüller, JS Brown, S Bernardis, JS Speck, GD Chern, ... Applied physics letters 89 (3), 2006	201	2006
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area molecular beam epitaxy S Hertenberger, D Rudolph, M Bichler, JJ Finley, G Abstreiter, ... Journal of Applied Physics 108 (11), 2010	198	2010
A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN CS Gallinat, G Koblmüller, JS Brown, JS Speck Journal of Applied Physics 102 (6), 2007	170	2007
Monolithically integrated high-β nanowire lasers on silicon B Mayer, L Janker, B Loitsch, J Treu, T Kostenbader, S Lichtmannecker, ... Nano letters 16 (1), 152-156, 2016	168	2016
Growth diagram and morphologies of AlN thin films grown by molecular beam epitaxy G Koblmueller, R Averbeck, L Geelhaar, H Riechert, W Hösler, P Pongratz Journal of Applied Physics 93 (12), 9591-9596, 2003	163	2003
Direct observation of a noncatalytic growth regime for GaAs nanowires D Rudolph, S Hertenberger, S Bolte, W Paosangthong, D Spirkoska, ... Nano Letters 11 (9), 3848-3854, 2011	160	2011
Spontaneous alloy composition ordering in GaAs-AlGaAs core–shell nanowires D Rudolph, S Funk, M Döblinger, S Morkötter, S Hertenberger, ... Nano letters 13 (4), 1522-1527, 2013	154	2013
Self-induced growth of vertical free-standing InAs nanowires on Si (111) by molecular beam epitaxy G Koblmüller, S Hertenberger, K Vizbaras, M Bichler, F Bao, JP Zhang, ... Nanotechnology 21 (36), 365602, 2010	152	2010
In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction S Fernández-Garrido, G Koblmüller, E Calleja, JS Speck Journal of applied physics 104 (3), 2008	136	2008
Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy G Koblmüller, CS Gallinat, S Bernardis, JS Speck, GD Chern, ... Applied physics letters 89 (7), 2006	129	2006
Direct observation of different equilibrium Ga adlayer coverages and their desorption kinetics on GaN (0001) and surfaces G Koblmüller, R Averbeck, H Riechert, P Pongratz Physical Review B 69 (3), 035325, 2004	127	2004
Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating M Soini, I Zardo, E Uccelli, S Funk, G Koblmüller, A Fontcuberta i Morral, ... Applied Physics Letters 97 (26), 2010	123	2010
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN G Koblmüller, S Fernández-Garrido, E Calleja, JS Speck Applied Physics Letters 91 (16), 2007	120	2007
Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy G Koblmüller, CS Gallinat, JS Speck Journal of applied physics 101 (8), 2007	113	2007
Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films B Sun, G Haunschild, C Polanco, J Ju, L Lindsay, G Koblmüller, YK Koh Nature materials 18 (2), 136-140, 2019	103	2019
Excitation wavelength dependence of terahertz emission from InN and InAs GD Chern, ED Readinger, H Shen, M Wraback, CS Gallinat, G Koblmüller, ... Applied physics letters 89 (14), 2006	103	2006
Effect of charged dislocation scattering on electrical and electrothermal transport in -type InN N Miller, EE Haller, G Koblmüller, C Gallinat, JS Speck, WJ Schaff, ... Physical Review B—Condensed Matter and Materials Physics 84 (7), 075315, 2011	96	2011
Enhanced luminescence properties of InAs–InAsP core–shell nanowires J Treu, M Bormann, H Schmeiduch, M Döblinger, S Morkötter, ... Nano letters 13 (12), 6070-6077, 2013	92	2013
High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy G Koblmüller, F Wu, T Mates, JS Speck, S Fernández-Garrido, E Calleja Applied Physics Letters 91 (22), 2007	91	2007

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