Room temperature operation of epitaxially grown SL Rommel, TE Dillon, MW Dashiell, H Feng, J Kolodzey, PR Berger, ...
Applied Physics Letters 73 (15), 2191-2193, 1998
209 1998 Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope JH Jang, W Zhao, JW Bae, D Selvanathan, SL Rommel, I Adesida, ...
Applied physics letters 83 (20), 4116-4118, 2003
97 2003 Effect of SL Rommel, JH Jang, W Lu, G Cueva, L Zhou, I Adesida, G Pajer, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002
85 2002 Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts C Rivas, R Lake, G Klimeck, WR Frensley, MV Fischetti, PE Thompson, ...
Applied Physics Letters 78 (6), 814-816, 2001
80 2001 Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR N Jin, SY Chung, RM Heyns, PR Berger, R Yu, PE Thompson, ...
IEEE electron device letters 25 (9), 646-648, 2004
76 2004 Si-based resonant interband tunneling diodes and method of making interband tunneling diodes PR Berger, PE Thompson, R Lake, K Hobart, SL Rommel
US Patent 6,803,598, 2004
75 2004 Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing MW Dashiell, RT Troeger, SL Rommel, TN Adam, PR Berger, C Guedj, ...
IEEE Transactions on Electron Devices 47 (9), 1707-1714, 2000
73 2000 Monolithically integrated Si/SiGe resonant interband tunnel diode/CMOS demonstrating low voltage MOBILE operation S Sudirgo, RP Nandgaonkar, B Curanovic, JL Hebding, RL Saxer, ...
Solid-State Electronics 48 (10-11), 1907-1910, 2004
62 2004 Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions N Jin, SY Chung, AT Rice, PR Berger, PE Thompson, C Rivas, R Lake, ...
IEEE Transactions on Electron Devices 50 (9), 1876-1884, 2003
61 2003 Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration SY Chung, N Jin, PR Berger, R Yu, PE Thompson, R Lake, SL Rommel, ...
Applied physics letters 84 (14), 2688-2690, 2004
45 2004 Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy PE Thompson, KD Hobart, ME Twigg, GG Jernigan, TE Dillon, ...
Applied physics letters 75 (9), 1308-1310, 1999
44 1999 Full band modeling of the excess current in a delta-doped silicon tunnel diode C Rivas, R Lake, WR Frensley, G Klimeck, PE Thompson, KD Hobart, ...
Journal of Applied Physics 94 (8), 5005-5013, 2003
43 2003 Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities SL Rommel, TE Dillon, PR Berger, PE Thompson, KD Hobart, R Lake, ...
IEEE Electron Device Letters 20 (7), 329-331, 1999
43 1999 Benchmarking and improving III-V Esaki diode performance with a record 2.2 MA/cm2 peak current density to enhance TFET drive current D Pawlik, B Romanczyk, P Thomas, S Rommel, M Edirisooriya, ...
2012 International Electron Devices Meeting, 27.1. 1-27.1. 3, 2012
38 2012 Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing WS Cho, M Luisier, D Mohata, S Datta, D Pawlik, SL Rommel, G Klimeck
Applied Physics Letters 100 (6), 2012
28 2012 Record PVCR GaAs-based tunnel diodes fabricated on Si substrates using aspect ratio trapping SL Rommel, D Pawlik, P Thomas, M Barth, K Johnson, SK Kurinec, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
27 2008 “p -on-n ” Si interband tunnel diode grown by molecular beam epitaxy KD Hobart, PE Thompson, SL Rommel, TE Dillon, PR Berger, DS Simons, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2001
26 2001 Epitaxial Si-based tunnel diodes PE Thompson, KD Hobart, ME Twigg, SL Rommel, N Jin, PR Berger, ...
Thin Solid Films 380 (1-2), 145-150, 2000
26 2000 Si-based interband tunneling devices for high-speed logic and low power memory applications SL Rommel, TE Dillon, PR Berger, R Lake, PE Thompson, KD Hobart, ...
International Electron Devices Meeting 1998. Technical Digest (Cat. No …, 1998
24 1998 1.3 μm photoresponsivity in Si-based X Shao, SL Rommel, BA Orner, H Feng, MW Dashiell, RT Troeger, ...
Applied physics letters 72 (15), 1860-1862, 1998
24 1998 
Paul R. BergerProfessor of Electrical and Computer Engineering, Ohio State UniversityZweryfikowany adres z ieee.org
