Effect of disorder on Raman scattering of single-layer S Mignuzzi, AJ Pollard, N Bonini, B Brennan, IS Gilmore, MA Pimenta, ...
Physical Review B 91 (19), 195411, 2015
819 2015 HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ...
ACS nano 7 (11), 10354-10361, 2013
331 2013 Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ...
Applied Physics Letters 94 (16), 2009
319 2009 Understanding and controlling Cu-catalyzed graphene nucleation: the role of impurities, roughness, and oxygen scavenging P Braeuninger-Weimer, B Brennan, AJ Pollard, S Hofmann
Chemistry of materials 28 (24), 8905-8915, 2016
183 2016 Nucleation control for large, single crystalline domains of monolayer hexagonal boron nitride via Si-doped Fe catalysts S Caneva, RS Weatherup, BC Bayer, B Brennan, SJ Spencer, K Mingard, ...
Nano letters 15 (3), 1867-1875, 2015
175 2015 A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As … É O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 2011
172 2011 Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As B Brennan, M Milojevic, CL Hinkle, FS Aguirre-Tostado, G Hughes, ...
Applied Surface Science 257 (9), 4082-4090, 2011
109 2011 Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission B Brennan, G Hughes
Journal of Applied Physics 108 (5), 2010
101 2010 Quantitative characterization of defect size in graphene using Raman spectroscopy AJ Pollard, B Brennan, H Stec, BJ Tyler, MP Seah, IS Gilmore, D Roy
Applied Physics Letters 105 (25), 2014
96 2014 Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states RV Galatage, DM Zhernokletov, H Dong, B Brennan, CL Hinkle, ...
Journal of Applied Physics 116 (1), 2014
79 2014 In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO 2 gate dielectric E OConnor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 022902-022902-3, 2008
73 2008 Effect of post deposition anneal on the characteristics of HfO2/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 99 (17), 2011
65 2011 Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, ...
Applied Physics Letters 100 (14), 2012
61 2012 The Characterization and Passivation of Fixed Oxide Charges and Interface States in the PK Hurley, É O'Connor, V Djara, S Monaghan, IM Povey, RD Long, ...
IEEE Transactions on Device and Materials Reliability 13 (4), 429-443, 2013
57 2013 Probing individual point defects in graphene via near-field Raman scattering S Mignuzzi, N Kumar, B Brennan, IS Gilmore, D Richards, AJ Pollard, ...
Nanoscale 7 (46), 19413-19418, 2015
55 2015 Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors RV Galatage, H Dong, DM Zhernokletov, B Brennan, CL Hinkle, ...
Applied Physics Letters 102 (13), 2013
53 2013 Ionic liquid electrolytes for sodium-ion batteries to control thermal runaway K Sirengo, A Babu, B Brennan, SC Pillai
Journal of Energy Chemistry 81, 321-338, 2023
51 2023 Half-cycle atomic layer deposition reaction study using O3 and H2O oxidation of Al2O3 on In0. 53Ga0. 47As B Brennan, M Milojevic, HC Kim, PK Hurley, J Kim, G Hughes, ...
Electrochemical and Solid-State Letters 12 (6), H205, 2009
51 2009 Indium diffusion through high-k dielectrics in high-k/InP stacks H Dong, W Cabrera, RV Galatage, S KC, B Brennan, X Qin, S McDonnell, ...
Applied Physics Letters 103 (6), 2013
48 2013 In situ atomic layer deposition half cycle study of Al2O3 growth on AlGaN B Brennan, X Qin, H Dong, J Kim, RM Wallace
Applied Physics Letters 101 (21), 2012
48 2012 
Robert M. WallaceUniversity of Texas at DallasZweryfikowany adres z utdallas.edu