Aleksey Andreev

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	Wszystkie	Od 2020
Cytowania	3847	549
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Eoin O'ReillyProfessor Emeritus, Tyndall National InstituteZweryfikowany adres z tyndall.ie
Alfred AdamsProfessor of Physics, University of SurreyZweryfikowany adres z surrey.ac.uk
Stephen J SweeneyProfessor of Photonics and Nanotechnology, James Watt School of Engineering, University of GlasgowZweryfikowany adres z glasgow.ac.uk
Dr Igor MarkoResearch Fellow, University of Glasgow, GlasgowZweryfikowany adres z glasgow.ac.uk
M S SkolnickProfessor of Physics, University of SheffieldZweryfikowany adres z sheffield.ac.uk
Stanko TomicFInstP, Chair in Photonics, University of Salford, STFC Daresbury Laboratories, University of SurreyZweryfikowany adres z salford.ac.uk
Mark HopkinsonUniversity of SheffieldZweryfikowany adres z sheffield.ac.uk
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikZweryfikowany adres z pdi-berlin.de
Andrey A. Lipovskii (Липовский АА)Alferov University and Peter the Great St.Petersburg Polytechnic University (SPbPU)Zweryfikowany adres z spbau.ru
Johann Peter ReithmaierInstitute of Nanostructure Technologies and Analytics (INA), University of KasselZweryfikowany adres z ina.uni-kassel.de
Stelios ChoulisProfessor, Cyprus University of Technology, Head of MEP Research UnitZweryfikowany adres z cut.ac.cy
Anthony M FoxProfessor of Optical Physics, University of SheffieldZweryfikowany adres z sheffield.ac.uk
Dmitry FirsovPeter the Great St. Petersburg Polytechnic University (SPbPU)Zweryfikowany adres z rphf.spbstu.ru
Vadim A. Shalygin (Шалыгин В.А.)Peter the Great St.Petersburg Polytechnic University (SPbPU)Zweryfikowany adres z rphf.spbstu.ru
Ben MurdinUniversity of SurreyZweryfikowany adres z surrey.ac.uk

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Aleksey Andreev

Scientist and Company Director, A-Modelling Solutions Ltd.

Zweryfikowany adres z amodelling.com

nanostructures semiconductor devices lasers theory


Tytuł Sortuj wg cytatów Sortuj wg roku Sortuj wg tytułu	Cytowane przez Cytowane przez	Rok
Theory of the electronic structure of GaN/AlN hexagonal quantum dots AD Andreev, EP O’reilly Physical Review B 62 (23), 15851, 2000	463	2000
Strain distributions in quantum dots of arbitrary shape AD Andreev, JR Downes, DA Faux, EP O’reilly Journal of Applied Physics 86 (1), 297-305, 1999	292	1999
A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers R Fehse, S Tomic, AR Adams, SJ Sweeney, EP O'Reilly, A Andreev, ... Selected Topics in Quantum Electronics, IEEE Journal of 8 (4), 801-810, 2002	208	2002
Mechanism of suppression of Auger recombination processes in type‐II heterostructures GG Zegrya, AD Andreev Applied Physics Letters 67 (18), 2681-2683, 1995	208	1995
Theoretical and experimental analysis of 1.3-μm InGaAsN/GaAs lasers S Tomic, EP O'Reilly, R Fehse, SJ Sweeney, AR Adams, AD Andreev, ... Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1228-1238, 2003	181	2003
Calculation of electric field and optical transitions in InGaN∕ GaN quantum wells UME Christmas, AD Andreev, DA Faux Journal of applied physics 98 (7), 2005	176	2005
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC= 0.5 V) logic applications M Radosavljevic, T Ashley, A Andreev, SD Coomber, G Dewey, ... 2008 IEEE International Electron Devices Meeting, 1-4, 2008	147	2008
Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots AD Andreev, EP O’Reilly Applied Physics Letters 79 (4), 521-523, 2001	122	2001
Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons AI Tartakovskii, MN Makhonin, IR Sellers, J Cahill, AD Andreev, ... Physical Review B—Condensed Matter and Materials Physics 70 (19), 193303, 2004	111	2004
Anisotropy-induced optical transitions in PbSe and PbS spherical quantum dots AD Andreev, AA Lipovskii Physical Review B 59 (23), 15402, 1999	111	1999
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs/GaAs quantum-dot lasers IP Marko, NF Masse, SJ Sweeney, AD Andreev, AR Adams, N Hatori, ... Applied Physics Letters 87 (21), 211114-211114-3, 2005	110	2005
Derivation of built-in polarization potentials in nitride-based semiconductor quantum dots DP Williams, AD Andreev, EP O’Reilly, DA Faux Physical Review B—Condensed Matter and Materials Physics 72 (23), 235318, 2005	103	2005
Structural analysis of strained quantum dots using nuclear magnetic resonance EA Chekhovich, KV Kavokin, J Puebla, AB Krysa, M Hopkinson, ... Nature nanotechnology 7 (10), 646-650, 2012	102	2012
InSb1− xNx growth and devices T Ashley, TM Burke, GJ Pryce, AR Adams, A Andreev, BN Murdin, ... Solid-State Electronics 47 (3), 387-394, 2003	89	2003
Strain distribution in GaN∕ AlN quantum-dot superlattices E Sarigiannidou, E Monroy, B Daudin, JL Rouvière, AD Andreev Applied Physics Letters 87 (20), 2005	79	2005
The role of Auger recombination in InAs 1.3-μm quantum-dot lasers investigated using high hydrostatic pressure IP Marko, AD Andreev, AR Adams, R Krebs, JP Reithmaier, A Forchel Selected Topics in Quantum Electronics, IEEE Journal of 9 (5), 1300-1307, 2003	77	2003
Optical absorption in PbSe spherical quantum dots embedded in glass matrix AD Andreev, EV Kolobkova, AA Lipovskii Journal of Applied Physics 88 (2), 750-757, 2000	51	2000
Optical matrix element in InAs/GaAs quantum dots: Dependence on quantum dot parameters AD Andreev, EP OReilly Applied Physics Letters 87 (21), 213106-213106-3, 2005	50	2005
Theory of conduction band structure of and dilute nitride alloys A Lindsay, EP O’Reilly, AD Andreev, T Ashley Physical Review B—Condensed Matter and Materials Physics 77 (16), 165205, 2008	46	2008
Theoretical study of Auger recombination in a GaInNAs quantum well laser structure AD Andreev, EP O’Reilly Applied physics letters 84 (11), 1826-1828, 2004	44	2004

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