| Diamond power devices: state of the art, modelling, figures of merit and future perspective N Donato, N Rouger, J Pernot, G Longobardi, F Udrea Journal of Physics D: Applied Physics 53 (9), 093001, 2019 | 249 | 2019 |
| Metal-insulator transition and superconductivity in boron-doped diamond T Klein, P Achatz, J Kacmarcik, C Marcenat, F Gustafsson, J Marcus, ... Physical Review B—Condensed Matter and Materials Physics 75 (16), 165313, 2007 | 246 | 2007 |
| Hall hole mobility in boron-doped homoepitaxial diamond J Pernot, PN Volpe, F Omnès, P Muret, V Mortet, K Haenen, T Teraji Physical Review B—Condensed Matter and Materials Physics 81 (20), 205203, 2010 | 188 | 2010 |
| High hole mobility in boron doped diamond for power device applications PN Volpe, J Pernot, P Muret, F Omnès Applied Physics Letters 94 (9), 2009 | 182 | 2009 |
| Zr/oxidized diamond interface for high power Schottky diodes A Traoré, P Muret, A Fiori, D Eon, E Gheeraert, J Pernot Applied Physics Letters 104 (5), 2014 | 178 | 2014 |
| Power electronics device applications of diamond semiconductors S Koizumi, H Umezawa, J Pernot, M Suzuki Woodhead publishing, 2018 | 174 | 2018 |
| Electrical transport in n-type 4H silicon carbide J Pernot, W Zawadzki, S Contreras, JL Robert, E Neyret, L Di Cioccio Journal of Applied Physics 90 (4), 1869-1878, 2001 | 170 | 2001 |
| Extreme dielectric strength in boron doped homoepitaxial diamond PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, Y Koide, F Jomard, ... Applied Physics Letters 97 (22), 2010 | 169 | 2010 |
| Electrical transport properties of aluminum-implanted 4H–SiC J Pernot, S Contreras, J Camassel Journal of applied physics 98 (2), 2005 | 115 | 2005 |
| Direct imaging of p–n junction in core–shell GaN wires P Tchoulfian, F Donatini, F Levy, A Dussaigne, P Ferret, J Pernot Nano letters 14 (6), 3491-3498, 2014 | 96 | 2014 |
| Si donor incorporation in GaN nanowires Z Fang, E Robin, E Rozas-Jiménez, A Cros, F Donatini, N Mollard, ... Nano letters 15 (10), 6794-6801, 2015 | 91 | 2015 |
| Hall electron mobility in diamond J Pernot, C Tavares, E Gheeraert, E Bustarret, M Katagiri, S Koizumi Applied physics letters 89 (12), 2006 | 91 | 2006 |
| Activation of aluminum implanted at high doses in 4H–SiC JM Bluet, J Pernot, J Camassel, S Contreras, JL Robert, JF Michaud, ... Journal of Applied Physics 88 (4), 1971-1977, 2000 | 87 | 2000 |
| Ultrawide bandgap semiconductors M Higashiwaki, R Kaplar, J Pernot, H Zhao Applied Physics Letters 118 (20), 2021 | 78 | 2021 |
| Free electron density and mobility in high-quality 4H–SiC J Pernot, S Contreras, J Camassel, JL Robert, W Zawadzki, E Neyret, ... Applied Physics Letters 77 (26), 4359-4361, 2000 | 76 | 2000 |
| Electron mobility in phosphorous doped {111} homoepitaxial diamond J Pernot, S Koizumi Applied Physics Letters 93 (5), 2008 | 69 | 2008 |
| Metal oxide semiconductor structure using oxygen-terminated diamond G Chicot, A Maréchal, R Motte, P Muret, E Gheeraert, J Pernot Applied Physics Letters 102 (24), 2013 | 68 | 2013 |
| High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer PN Volpe, P Muret, J Pernot, F Omnès, T Teraji, F Jomard, D Planson, ... physica status solidi (a) 207 (9), 2088-2092, 2010 | 67 | 2010 |
| Deep-depletion mode boron-doped monocrystalline diamond metal oxide semiconductor field effect transistor TT Pham, J Pernot, G Perez, D Eon, E Gheeraert, N Rouger IEEE Electron Device Letters 38 (11), 1571-1574, 2017 | 66 | 2017 |
| Deep depletion concept for diamond MOSFET TT Pham, N Rouger, C Masante, G Chicot, F Udrea, D Eon, E Gheeraert, ... Applied Physics Letters 111 (17), 2017 | 64 | 2017 |
Nicolas C. RougerSenior Scientist at Université de Toulouse, LAPLACE, CNRS, INPT, UPS, F-31071 Toulouse, FranceZweryfikowany adres z laplace.univ-tlse.fr